Information recording medium and method for producing the same

ABSTRACT

The information recording medium of the present invention comprises at least one of the following oxide-based material layers: (I) an oxide-based material layer containing Zr, at least one element selected from the group GL1 consisting of La, Ga and In, and oxygen (O); (II) an oxide-based material layer containing M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and O; (III) an oxide-based material layer containing at least one element selected from the group GM2 consisting of Zr and Hf, at least one element selected from the group GL2, Si, and O; and (IV) an oxide-based material layer containing at least one element selected from the group GM2, at least one element selected from the group GL2, Cr, and O. This oxide-based material layer can be used, for example, as a dielectric layer.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an information recording medium on/fromwhich information can be recorded, erased, rewritten and reproducedoptically or electrically and a method for producing the same.

2. Description of the Related Art

An example of the basic structure of an optical information recordingmedium is such that a first dielectric layer, a recording layer, asecond dielectric layer and a reflective layer are formed in this orderon a surface of a substrate. The first and the second dielectric layersserve to regulate the optical distance to increase the opticalabsorption efficiency of the recording layer and increase the differencebetween the reflectance of the crystalline phase and the reflectance ofthe amorphous phase to increase the signal amplitude. The dielectriclayers also serve to protect the recording layer from moisture or thelike. The dielectric layers are formed of, for example, a mixture of 80mol % of ZnS and 20 mol % of SiO₂ (hereinafter, expressed by of “(ZnS)₈₀(SiO₂)₂₀ (mol %)” or “(ZnS)₈₀ (SiO₂)₂₀”; other mixtures also areexpressed in the same manner) (e.g., see Japanese Patent 1959977). Thismaterial is amorphous and has a low thermal conductivity, hightransparency and a high refractive index. This material also has a highfilm-formation speed when a film is being formed, and excellentmechanical characteristics and moisture resistance. Thus, “(ZnS)₈₀(SiO₂)₂₀” has been put into practical use as a material suitable forforming dielectric layers.

With a recent tendency toward increasing high density, the recordinglayer has been designed to be as thin as about ⅓ of that in 1990, theyear that is in the early period of the practical use. This is for thepurpose of reducing the heat capacity of the recording layer and lettingheat escape to the reflective layer side rapidly after the temperatureis increased in order to record small marks satisfactorily.

The inventors of the present invention found out a problem of(ZnS)₈₀(SiO₂)₂₀ as the thickness of the recording layer is reduced. Theproblem is a phenomenon where, when the recording layer is irradiatedwith laser light to rewrite information repeatedly, S in (ZnS)₈₀(SiO₂)₂₀is diffused in the recording layer and the repeated rewritingperformance is reduced significantly. In order to prevent thisdiffusion, the inventors of the present invention proposed that layersfor serving as interface layers should be provided between the firstdielectric layer and the recording layer and between the recording layerand the second dielectric layer (e.g., see N. Yamada et al., JapaneseJournal of Applied Physics Vol. 37(1998) pp. 2104-2110). A nitridecontaining Ge is disclosed as the material of the interface layers(e.g., see WO 97/34298). Materials containing S are not suitable. Theinterface layers improved the repeated rewriting performancesignificantly. An interface layer is provided in a 4.7 GB/DVD-RAM(Digital Versatile Disk-Random Access Memory) disk that already has beenin practical use, such as an information recording medium 31 shown inFIG. 12. In this medium, a first dielectric layer 102, a first interfacelayer 103, a recording layer 4, a second interface layer 105, a seconddielectric layer 106, an optical absorption correcting layer 7 and areflective layer 8 are formed in this order on a surface of a substrate1, and a dummy substrate 10 is attached to the reflective layer 8 withan adhesive layer 9 (e.g., see JP2001-322357). This configuration canprovide large capacity and excellent repeated rewriting performance.

A layer made of a nitride containing Ge can be formed by using Ge or analloy containing Ge for reactive film-formation in a high pressureatmosphere with a mixture of Ar gas and nitrogen gas. The repeatedrewriting performance or the moisture resistance depend on the degree ofthis nitriding of Ge, so that the conditions for film-formation aredetermined strictly. In particular, reactive film-formation at a highpressure depends significantly on the structure of a film-formationapparatus and the conditions for film-formation. For example, it tooktime to determine the conditions for optimal pressure or gas flow ratewhen a film-formation apparatus for experiments was scaled up to afilm-formation apparatus for mass production. Since there is such aproblem, there is a demand for a material with which an interface layercan be formed by non-reactive film-formation, that is, can be formed ina low pressure atmosphere of Ar gas and is free from S. If the interfacelayer is used as a dielectric layer, it is possible to reduce the numberof layers.

Furthermore, an example of materials suitable for the interface layer ofan information recording medium is one proposed from the viewpoint ofthe relationship of the thermal conductivity (e.g., see JP2001-67722).

In order to solve the above-described conventional problems, theinventors of the present invention have proposed an interface layer thatcan be formed by non-reactive film-formation and has excellent moistureresistance and repeated rewriting performance, that is a dielectricmaterial that can be provided in contact with the recording layer, canbe used as the first or the second dielectric layer, and contains amixture of ZrO₂, SiO₂ and Cr₂O₃, which exhibit excellent repeatedrewriting performance. In this ZrO₂—SiO₂—Cr₂O₃, ZrO₂ and SiO₂ aretransparent and thermally stable materials, and Cr₂O₃ is a material thathas excellent adhesion with a chalcogen based recording layer.Therefore, both the thermal stability and the adhesion can be providedby mixing these three oxides. In order to ensure adhesion, a compositioncontaining Cr₂O₃ in a content of 30 mol % or more is more preferable. Aninformation recording medium in which ZrO₂—SiO₂—Cr₂O₃ material is usedas an interface layer or a dielectric layer has excellent repeatedrewriting performance and moisture resistance.

However, low thermal conductivity and transparency also are required fora material suitable for forming an interface layer or a dielectriclayer. These two properties of ZrO₂—SiO₂—Cr₂O₃ are not comparable tothose of (ZnS)₈₀ (SiO₂)₂₀. ZrO₂ and SiO₂ are substantially opticallytransparent (extinction coefficient 0.00 or less) in wavelength regionsof 660 nm and 405 nm, whereas Cr₂O₃ absorbs light in the two regions andis not transparent. Cr₂O₃ absorbs light in a larger amount as thewavelength becomes shorter, and the extinction coefficient in thevicinity of 405 nm is nearly 0.3. For this reason, for example, in thecase of a composition of mixed (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %), theextinction coefficient in a wavelength region of 660 nm is 0.02, and theextinction coefficient in a wavelength region of 405 nm is 0.2. If thematerial is not transparent, the dielectric layer absorbs light, whichreduces light absorption of the recording layer and increases thetemperature of the dielectric layer. Phase change recording is performedby forming an amorphous mark in the recording layer by melting a laserlight irradiation portion and cooling it rapidly (recording) and heatingit to the crystallization temperature or more and then cooling itgradually for crystallization (erasure). When the light absorption ofthe recording layer is reduced, the recording sensitivity and theerasure sensitivity of the recording layer are reduced (laser lightirradiation with larger power is necessary). When the temperature of thedielectric layer is increased, this makes it difficult to cool therecording layer rapidly and form satisfactory amorphous marks duringrecording. As a result, the signal quality is deteriorated.

Regarding the thermal conductivity, since it is difficult to measure thethermal conductivity of a thin film precisely, the magnitudes of thethermal conductivities are compared relatively, based on the differencein recording sensitivity between individual information recording media.For example, when the thermal conductivity of the second dielectriclayer is low, heat is accumulated temporarily in the recording layer andthen is diffused rapidly to the reflective layer without being diffusedin the in-plane direction. In other words, the rapid cooling effect isincreased, so that amorphous marks can be formed with a smaller laserpower (high recording sensitivity). On the other hand, when the thermalconductivity of the second dielectric layer is high, heat is hardlyaccumulated in the recording layer and easily is diffused to the seconddielectric layer. Thus, the rapid cooling effect is small and a largelaser power is necessary to form amorphous marks (low recordingsensitivity). For ZrO₂—SiO₂—Cr₂O₃, a larger laser power is required forrecording than when (ZnS)₅₀(SiO₂)₂₀ is used as the second dielectriclayer, so that it is determined that for ZrO₂—SiO₂—Cr₂O₃ has highthermal conductivity.

Thus, ZrO₂—SiO₂—Cr₂O₃ has problems in thermal conductivity andtransparency. When ZrO₂—SiO₂—Cr₂O₃ is used as the first or the seconddielectric layer in DVD-RAM disks and Blu-ray disks, the recordingsensitivity is low, which requires improvement.

SUMMARY OF THE INVENTION

Therefore, with the foregoing in mind, it is an object of the presentinvention to provide a dielectric material having low thermalconductivity and high transparency, and to provide an informationrecording medium having good recording sensitivity while maintaining theconventional repeated rewriting performance and moisture resistance byemploying this dielectric material.

A first information recording medium of the present invention is aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising an oxide-based material layer containing Zr,at least one element selected from the group GL1 consisting of La, Gaand In, and oxygen (O).

A second information recording medium of the present invention is aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising an oxide-based material layer containing M1(where M1 is a mixture of Zr and Hf, or Hf), at least one elementselected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y,and oxygen (O).

A third information recording medium of the present invention is aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising an oxide-based material layer containing atleast one element selected from the group GM2 consisting of Zr and Hf,at least one element selected from the group GL2 consisting of La, Ce,Al, Ga, In, Mg and Y, Si, and oxygen (O).

A fourth information recording medium of the present invention is aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising an oxide-based material layer containing atleast one element selected from the group GM2 consisting of Zr and Hf,at least one element selected from the group GL2 consisting of La, Ce,Al, Ga, In, Mg and Y, Cr, and oxygen (O).

A fifth information recording medium of the present invention is aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising an oxide-based material layer containing atleast one element selected from the group GM consisting of Zr and Hf, atleast one element selected from the group GL consisting of La, Ce, Al,Ga, In, Mg and Y, and oxygen (O).

A first method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing Zr, at leastone element selected from the group GL1 consisting of La, Ga and In, andoxygen (O), comprising forming the oxide-based material layer bysputtering using a sputtering target containing Zr, at least one elementselected from the group GL1 and oxygen (O).

A second method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing M1 (where M1is a mixture of Zr and Hf, or Hf), at least one element selected fromthe group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and oxygen(O), comprising forming the oxide-based material layer by sputteringusing a sputtering target containing the M1, at least one elementselected from the group GL2 and oxygen (O).

A third method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing at least oneelement selected from the group GM2 consisting of Zr and Hf, at leastone element selected from the group GL2 consisting of La, Ce, Al, Ga,In, Mg and Y, Si, and oxygen (O), comprising forming the oxide-basedmaterial layer by sputtering using a sputtering target containing atleast one element selected from the group GM2, at least one elementselected from the group GL2, Si and oxygen (O).

A fourth method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing at least oneelement selected from the group GM2 consisting of Zr and Hf, at leastone element selected from the group GL2 consisting of La, Ce, Al, Ga,In, Mg and Y, Cr, and oxygen (O), comprising forming the oxide-basedmaterial layer by sputtering using a sputtering target containing atleast one element selected from the group GM2, at least one elementselected from the group GL2, Cr and oxygen (O).

A fifth method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing at least oneelement selected from the group GM consisting of Zr and Hf, at least oneelement selected from the group GL consisting of La, Ce, Al, Ga, In, Mgand Y, and oxygen (O), comprising forming the oxide-based material layerby sputtering using a sputtering target containing at least one elementselected from the group GM, at least one element selected from the groupGL and oxygen (O).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial cross-sectional view showing an example of aninformation recording medium of the present invention.

FIG. 2 is a partial cross-sectional view showing another example of aninformation recording medium of the present invention.

FIG. 3 is a partial cross-sectional view showing yet another example ofan information recording medium of the present invention.

FIG. 4 is a partial cross-sectional view showing still another exampleof an information recording medium of the present invention.

FIG. 5 is a partial cross-sectional view showing another example of aninformation recording medium of the present invention.

FIG. 6 is a partial cross-sectional view showing yet another example ofan information recording medium of the present invention.

FIG. 7 is a triangular diagram showing a composition range of a materialexpressed by formula (1) or (3) of an example of the present invention.

FIG. 8 is a triangular diagram showing a composition range of a materialexpressed by formula (19) of an example of the present invention.

FIG. 9 is a schematic view showing an example of an informationrecording medium of the present invention on which information isrecorded by application of electric energy.

FIG. 10 is a schematic view showing an example of a system using theinformation recording medium shown in FIG. 9.

FIG. 11 is a schematic view showing an example of a sputtering apparatusused in a method for producing an information recording medium of thepresent invention.

FIG. 12 is a partial cross-sectional view showing an example of aconventional information recording medium.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

An oxide-based material layer contained in a first to a fifthinformation recording medium of the present invention has hightransparency at least from a red wavelength region in the vicinity of660 nm to a bluish-purple wavelength region in the vicinity of 405 nmand low thermal conductivity. Furthermore, this oxide-based materiallayer does not contain S and therefore it can be provided in contactwith a recording layer, and has sufficient thermal stability andmoisture resistance at the same time. Therefore, for example, by usingthis oxide-based material layer as a dielectric layer, an informationrecording medium having an improved recording sensitivity whilemaintaining sufficient reliability and excellent repeated rewritingperformance can be realized. In an information recording mediumutilizing electric energy for recording and reproduction of information,if this oxide-based material is used as a dielectric layer forinsulating a recording layer, a phase change can be caused in therecording layer with a small amount of electric energy. According to afirst to a fifth method for producing an information recording medium,an information recording medium having the above-described features canbe produced.

A first information recording medium of the present invention containsan oxide-based material layer containing Zr, at least one elementselected from the group GL1 consisting of La, Ga and In, and oxygen (O).It is preferable that the oxide-based material layer contains a materialhaving a composition expressed by:Zr_(Q1)L1_(T1)O_(100-Q1-T1)(atom %)  (1)

-   -   where L1 is at least one element selected from the group GL1, Q1        and T1 satisfy 0<Q1<34, 0<T1<50, and 20<Q1+T1<60. In the formula        (1), it is more preferable that L1 is Ga.

Herein, “atom %” indicates that formula (1) is a composition formulaexpressed by taking the total number of Zr atoms, L1 atoms and O atomsas the reference (100%). When L1 includes at least two elements, T1indicates the total number of atoms of all the contained elements. Informulae below, the indication of “atom %” is used in the same sense. Informula (1), only Zr atoms, L1 atoms and O atoms contained in theoxide-based material layer are counted and shown. Therefore, the oxidebase material layer containing the material expressed by formula (1) maycontain components other than these atoms.

As described above, in formula (1), it is preferable that Q1 and T1satisfy 0<Q1<34, 0<T1<50, and 20<Q+T<60. When Zr is contained in 34 atom% or more, the adhesion is deteriorated. When the element L1 iscontained in 50 atom % or more, the repeated rewriting performance isdeteriorated. When oxygen (O) is contained in less than 40 atom %, thetransparency becomes poor. More preferably, 4<Q1<24, 6<T1<37, and30<Q1+T1<50.

In formula (1), each atom can be present in the form of any compound.The material is specified by such a formula for the following reason:when investigating the composition of a layer made of a thin film, it isdifficult to obtain the composition of the compound, and therefore inreality, it is common to obtain only the element composition (i.e.,ratio of the atoms). In the material expressed by formula (1), it isbelieved that most of Zr and the element L1 are present in the form ofoxide in combination with oxygen atoms. Therefore, in thisspecification, even a layer containing the material expressed by formula(1) is referred to as “oxide-based material layer” for convenience. Thisapplies to the following formulae (3), (5), (6), (9) and (10).

In the oxide-based material layer contained in the first informationrecording medium, when it is assumed that most of Zr and the element L1are present in the form of oxide in combination with oxygen atoms, thecontained material also can be expressed by formula (2) below:(D1)_(X1)(E1)_(100-X1)(mol %)  (2)

-   -   where D1 is an oxide of Zr, E1 is an oxide of at least one        element selected from the group GL1, and X1 satisfies 0<X1<100.

In formula (2), it is preferable that D1 is ZrO₂ and E1 is Ga₂O₃.

A second information recording medium of the present invention containsan oxide-based material layer containing M1 (where M1 is a mixture of Zrand Hf, or Hf), at least one element selected from the group GL2consisting of La, Ce, Al, Ga, In, Mg and Y, and oxygen (O). It ispreferable that the oxide-based material layer contains a materialhaving a composition expressed by:M1_(Q2)L2_(T2)O_(100-Q2-T2)(atom %)  (3)

where M1 is a mixture of Zr and Hf, or Hf, L2 is at least one elementselected from the group GL2, and Q2 and T2 satisfy 0<Q2<34, 0<T2<50, and20<Q2+T2<60. In formula (3), it is more preferable that L2 is Ga.

Also in the second information recording medium of the presentinvention, “atom %” is used in the same sense as in the case of thefirst information recording medium. When M1 is a mixture of Zr and Hf,Q2 indicates the total number of atoms of Zr and Hf. When L2 includes atleast two elements, T2 indicates the total number of atoms of all thecontained elements. In formula (3), only M1 atoms, L2 atoms and O atomscontained in the oxide-based material layer are counted and shown.Therefore, the oxide base material layer containing the materialexpressed by formula (3) may contain components other than these atoms.

As described above, in formula (3), it is preferable that Q2 and T2satisfy 0<Q2<34, 0<T2<50, and 20<Q2+T2<60. When M1 is contained in 34atom % or more, the adhesion is deteriorated. When the element L2 iscontained in 50 atom % or more, the repeated rewriting performance isdeteriorated. When oxygen (O) is contained in less than 40 atom %, thetransparency becomes poor. More preferably, 4<Q2<24, 6<T2<37, and30<Q2+T2<50.

In formula (3) as well as in the case of formula (1), each atom can bepresent in the form of any compound. Also in the material expressed byformula (3), it is believed that most of M1 and the element L2 arepresent in the form of oxide in combination with oxygen atoms. When itis assumed that most of M1 and the element L2 are present in the form ofoxide in combination with oxygen atoms, the material contained in theoxide-based material layer can be expressed by formula (4) below:(D2)_(X2)(E2)_(100-X2)(mol %)  (4)

-   -   where D2 is an oxide of M1, E2 is an oxide of at least one        element selected from the group GL2, and X2 satisfies 0<X2<100.

In formula (4), it is preferable that E2 is Ga₂O₃.

A third information recording medium of the present invention containsan oxide-based material layer containing at least one element selectedfrom the group GM2 consisting of Zr and Hf, at least one elementselected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y,Si, and oxygen (O). It is preferable that the oxide-based material layercontains a material having a composition expressed by:M2_(Q3)Si_(R1)L2_(T3)O_(100-Q3-R1-T3)(atom %)  (5)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and Q3, R1        and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.

Furthermore, in the third information recording medium of the presentinvention, the oxide-based material layer may further contain at leastone element selected from the group GK1 consisting of carbon (C),nitrogen (N) and Cr. In this case, it is preferable that the oxide-basedmaterial layer contains a material having a composition expressed by:M2_(Q3)Si_(R1)L2_(T3)K1_(J1)O_(100-Q3-R1-T3-J1)(atom %)  (6)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and K1 is        at least one element selected from the group GK1, and Q3, R1, T3        and J1 satisfy 0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and        20<Q3+R1+T3+J1<80.

In formulae (5) and (6), it is more preferable that M2 is Zr and L2 isGa (i.e., Zr_(Q3)Si_(R1)Ga_(T3)O_(100-Q3-R1-T3),Zr_(Q3)Si_(R1)Ga_(T3)K1_(J1)O_(100-Q3-R1-T3-J1) are preferable).

Also in the third information recording medium of the present invention,“atom %” is used in the same sense as in the case of the firstinformation recording medium. When M2 includes two elements, Q3indicates the total number of atoms of the two elements. When L2includes at least two elements, T3 indicates the total number of atomsof all the contained elements. When K1 includes at least two elements,J1 indicates the total number of atoms of all the contained elements. Informula (5), only M2 atoms, L2 atoms, Si atoms and O atoms contained inthe oxide-based material layer are counted and shown. In formula (6),only M2 atoms, L2 atoms, Si atoms, K1 atoms and O atoms contained in theoxide-based material layer are counted and shown. Therefore, the oxidebase material layer containing the material expressed by formula (5) or(6) may contain components other than these atoms.

As described above, in formula (5), it is preferable that Q3, R1 and T3satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60. When M2 or Si iscontained in 32 atom % or more, the adhesion with recording layer isdeteriorated. When the element L2 is contained in 43 atom % or more, therepeated rewriting performance is deteriorated. When oxygen (O) iscontained in less than 40 atom %, the transparency becomes poor. Morepreferably, 0<Q3<25, 0<R1<25, 6<T3<37, 30<Q3+R1+T3<50. Therefore, thisoxide-based material layer is a material having excellent thermalstability, high transparency, adhesion, moisture resistance and lowthermal conductivity.

In formulae (5) and (6) as well as in the case of formula (1), each atomcan be present in the form of any compound. For example, in the materialexpressed by formula (5), it is believed that most of M2, Si and theelement L2 are present in the form of oxide in combination with oxygenatoms. Si may be contained in the form of nitride or carbide. Thus, thematerial expressed by formula (5) or (6) contained in the oxide-basedmaterial layer can be expressed by formula (7) or (8) below:(D3)_(X3)(g)_(Z1)(E2)_(100-X3-Z1)(mol %)  (7)

-   -   where D3 is an oxide of at least one element selected from the        group GM2, g is at least one compound selected from the group        consisting of SiO₂, Si₃N₄ and SiC, E2 is an oxide of at least        one element selected from the group GL2, and X3 and Z1 satisfy        10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.        (D3)_(X3)(SiO₂)_(Z2)(f)_(A1)(E2)_(100-X3-Z2-A1)(mol %)  (8)    -   where D3 and E2 are the same oxides as in formula (7), f is at        least one compound selected from the group consisting of SiC,        Si₃N₄, and Cr₂O₃, and X3, Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50,        0<A1≦50, and 10<X3+Z2+A1≦90.

In formulae (7) and (8), it is preferable that D3 is ZrO₂, and E2 isGa₂O₃.

A fourth information recording medium of the present invention containsan oxide-based material layer containing at least one element selectedfrom the group GM2 consisting of Zr and Hf, at least one elementselected from the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y,Cr, and oxygen (O). It is preferable that the oxide-based material layercontains a material having a composition expressed by:M2_(Q4)Cr_(U)L2_(T4)O_(100-Q4-U-T4)(atom %)  (9)

where M2 is at least one element selected from the group GM2, L2 is atleast one element selected from the group GL2, and Q4, U and T4 satisfy0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.

Furthermore, in the fourth information recording medium of the presentinvention, the oxide-based material layer may further contain at leastone element selected from the group GK2 consisting of nitrogen (N) andcarbon (C). In this case, it is preferable that the oxide-based materiallayer contains a material having a composition expressed by:M2_(Q4)Cr_(U)L2_(T4)Si_(R2)K2_(J2)O_(100-Q4-U-T4-R2-J2)(atom %)  (10)

where M2 is at least one element selected from the group GM2, L2 is atleast one element selected from the group GL2, and K2 is at least oneelement selected from the group GK2 consisting of nitrogen (N) andcarbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40,0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.

In formulae (9) and (10), it is preferable that M2 is Zr and L2 is Ga(i.e., Zr_(Q4)Cr_(U)Ga_(T4)O_(100-Q4-U-T4),Zr_(Q4)Cr_(U)Ga_(T4)Si_(R2)K2_(J2)O_(100-Q4-U-T4-R2-J2) are preferable).

In formula (10), it is preferable that Q4, U, T4, R2 and J2 satisfy0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85. Inthe material system expressed by formula (10), when the element M2 isincluded, the heat resistance is improved. However, when the contentexceeds 32 atom %, the adhesion with the recording layer isdeteriorated, so that it is preferable that the content of the elementM2 is 32 atom % or less. When Cr is contained in this material system,the adhesion with the recording layer is improved. However, it ispreferable that the content of Cr is 25 atom % or less so as to preventthe transparency from deteriorating in the case where C and N areincluded. When the element L2 is contained in this material system, thetransparency of the oxide-based material layer is improved. However, itis preferable that the content is 40 atom % or less so as to prevent therepeated rewriting performance from deteriorating. When Si is present inthe form of nitride or carbide together with an oxide, the structurebecomes complicated, so that the thermal conductivity of this materialsystem can be reduced. However, in this material system, it ispreferable that the content of Si is 30 atom % or less so as to preventthe adhesion with the recording layer from deteriorating. Since theelement K2 (C, N) tends to form a compound with Si in this materialsystem, the thermal conductivity can be reduced for the reason describedabove. However, it is preferable that the content of C is 20 atom % orless and the content of N is 40 atom % or less so as to prevent thetransparency from deteriorating. In this material system, when N isincluded in a large amount, the transparency can be obtained with asmaller amount of O than in other material systems. However, when thecontent of O is 15 atom % or less, the transparency is deteriorated, andwhen it is 75 atom % or more, O becomes surplus and is combined morereadily with Si than C or N, which makes it difficult to adjust thethermal conductivity. Therefore, it is preferable that the content of Ois more than 15 atom %, and less than 75 atom %.

In formulae (9) and (10) as well as in the case of formula (1), eachatom can be present in the form of any compound. For example, in thematerial expressed by formula (9), it is believed that most of M2, Crand the element L2 are present in the form of oxide in combination withoxygen atoms. Furthermore, in the material expressed by formula (10), itis believed that Si is present in at least one form of oxide, nitrideand carbide. Thus, the material expressed by formula (9) or (10)contained in the oxide-based material layer can be expressed by formula(11) or (12) below:(D3)_(X4)(Cr₂O₃)_(A2)(E2)_(100-X4-A2-Z3)(mol %)  (11)

where D3 is an oxide of at least one element selected from the groupGM2, E2 is an oxide of at least one element selected from the group GL2,and X4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90.(D3)_(X4)(Cr₂O₃)_(A2)(h)_(Z3)(E2)_(100-X4-A2-Z3)(mol %)  (12)

-   -   where D3 is an oxide of at least one element selected from the        group GM2, h is at least one compound selected from the group        consisting of Si₃N₄ and SiC, E2 is an oxide of at least one        element selected from the group GL2, and X4, A2, and Z3 satisfy        10≦4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90.

In the material systems expressed by formulae (11) and (12), when D3 isincluded, the heat resistance is improved. However, when the contentexceeds 90 mol %, the adhesion with the recording layer is deteriorated,so that it is preferable that the content is 90 mol % or less. In thismaterial system, when Cr₂O₃ is included, the adhesion with the recordinglayer is improved. However, it is preferable that the content is 40 mol% or less so as to prevent the transparency from deteriorating. In thismaterial system, when the element E2 is included, the transparency isimproved. However, it is preferable that the content is 90 mol % or lessso as to prevent the repeated rewriting performance from deteriorating.The component h contained in the material expressed in formula (12)makes the structure complicated, so that the thermal conductivity ofthis material system can be reduced. However, in this material system,it is preferable that the content of h is 40 mol % or less so as toprevent the transparency from deteriorating.

In formulae (11) and (12), it is preferable that D3 is ZrO₂, and E2 isGa₂O₃.

Both oxides of Zr and Hf are transparent, have high melting points andexcellent thermal stability. It is believed that Zr and Hf are presentin the oxide-based material layer substantially in the form of ZrO₂ andHfO₂, respectively. The information recording medium provided with alayer containing such a maternal having excellent thermal stability ishardly deteriorated even if information is rewritten repeatedly, and hasexcellent durability. ZrO₂ and HfO₂ exhibit substantially the sameproperties, but ZrO₂ is less expensive and therefore more useful. WhenSi is further included, flexibility can be obtained, in addition tothermal stability. Therefore, the resistance against damage fromexpansion and contraction of the film during rewriting can be large,which makes it difficult for the film to be cracked. An oxide of Si alsohas excellent transparency.

Any oxide of La, Ce, A1, Ga, In, Mg and Y is transparent in a laserwavelength in the vicinity of 405 nm, and the extinction coefficient issubstantially 0.00. These elements are present in an oxide-basedmaterial layer in the form of La₂O₃, CeO₂, Al₂O₃, Ga₂O₃, In₂O₃, MgO andY₂O₃, respectively. These oxides are insoluble in water and exhibitexcellent moisture resistance, and are attached satisfactorily with arecording layer made of chalcogenide. In particular, Ga₂O₃ has excellenttransparency and adhesion, and has a low thermal conductivity and a highfilm-formation speed, compared with Cr₂O₃, and thus Ga₂O₃ is a usefulmaterial.

The first to the fourth information recording media further include arecording layer, and the recording layer may be formed of a phase changematerial in which a phase transformation between amorphous andcrystalline phases is caused. As the phase change material, either awrite once type material in which irreversible phase transformation iscaused or a rewritable material in which reversible phase transformationis caused can be used. More specifically, rewritable materials includeany one material selected from the group consisting of Ge—Sb—Te,Ge—Sn—Sb—Te, Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, Ge—Sn—Sb—Bi—Te,Ag—In—Sb—Te and Sb—Te. The thickness of the recording layer preferablyis 20 nm or less, more preferably 3 nm to 15 nm. Alternatively,magneto-optical materials such as Tb—Fe—Co, Gd—Tb—Fe—Co, Tb—Fe,Dy—Fe—Co, and Dy—Nd—Fe—Co can be used. A plurality of recording layerscontaining such a recording layer can be provided. The plurality layersmay include other kind of recording layer. The oxide-based materiallayer can be applied, regardless of the kind or the number of therecording layer, and can be applied to media for recording with electricmeans, in addition to media for recording with optical means such aslaser light.

The oxide-based material layer may be provided in contact with at leastone surface of the recording layer. Since the oxide-based material layeris free from S, an information recording medium having good repeatedrewriting performance and moisture resistance can be obtained, even ifthe oxide-based material layer is formed in direct contact with therecording layer.

Next, a first to a fourth method for producing an information recordingmedium of the present invention will be described.

The first to the fourth methods for producing an information recordingmedium of the present invention are methods including the step offorming an oxide-based material layer by sputtering. By sputtering, anoxide-based material layer having substantially the same composition asthat of a sputtering target can be formed. Therefore, according to thisproduction method, an oxide-based material layer having a desiredcomposition can be formed easily by selecting a suitable sputteringtarget.

A first method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing Zr, at leastone element selected from the group GL1 consisting of La, Ga and In, andoxygen (O), comprising forming the oxide-based material layer bysputtering using a sputtering target containing Zr, at least one elementselected from the group GL1 and oxygen (O). In this case, it ispreferable that the sputtering target contains a material having acomposition expressed by:Zr_(q1)L1_(t1)O_(100-q1-t1)(atom %)  (13)

-   -   where L1 is at least one element selected from the group GL1, q1        and t1 satisfy 0<q1<34, 0<t1<50, and 20<q1+t1<60. In formula        (13), it is more preferable that L1 is Ga.

Assuming that Zr and the element L1 are present in the form of oxide,the composition of the sputtering target can be expressed by formula(14) below:(D1)_(x1)(E1)_(100-x1)(mol %)  (14)

-   -   where D1 is an oxide of Zr, E1 is an oxide of at least one        element selected from the group GL1, and x1 satisfies 0<x1<100,        preferably 20≦x1≦80.

The oxide-based material layer containing the material expressed byformula (1) can be formed by sputtering the sputtering target shown byformula (14). The experiments of the inventors of the present inventionconfirmed that the element composition (atom %) of the formedoxide-based material layer can have oxygen in 1 to 2 atom % less thanthat element composition (atom %) calculated from the indicatedcomposition (mol %) of the sputtering target.

In formula (14), it is preferable that D1 is ZrO₂ and E1 is Ga₂O₃ (i.e.,a sputtering target expressed by (ZrO₂)_(x1)(Ga₂O₃)_(100-x1) (mol %) inthe formula (14)).

When D1 contains two oxides, x1 denotes the total mole number of the twooxides. Similarly, when E1 contains two oxides, (100-x) denotes thetotal mole number of all the contained oxides.

The sputtering target is specified as above, because in general, thesputtering target containing Zr, an element selected from the group GL1and oxygen (O) is supplied with an indication of the composition of anoxide of Zr and an oxide of an element selected from the group GL1. Inthe production process for the sputtering target, it is difficult to mixdirectly a low melting point material such as Ga and In and a highmelting point material such as Zr, so that it is common to mixcomponents in the form of oxide to produce a sputtering target.

The inventors of the present invention have confirmed that the elementcomposition obtained by analyzing the sputtering target having acomposition indicated in this manner with a X-ray microanalyzer issubstantially equal to the element composition calculated from theindicated composition (i.e., the composition indication (nominalcomposition) is proper). Therefore, the sputtering target supplied inthe form of a mixture of oxides preferably can be used in the firstmethod for producing an information recording medium. It should be notedthat this also applied to the second to the fourth methods for producingan information recording media described below.

A second method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing M1 (where M1is a mixture of Zr and Hf, or Hf), at least one element selected fromthe group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, and oxygen(O), comprising forming the oxide-based material layer by sputteringusing a sputtering target containing the M1, at least one elementselected from the group GL2 and oxygen (O). In this case, it ispreferable that the sputtering target contains a material having acomposition expressed by:M1_(q2)L2_(t2)O_(100-q2-t2)(atom %)  (15)

where M1 is a mixture of Zr and Hf, or Hf, L2 is at least one elementselected from the group GL2, and q2 and t2 satisfy 0<q2<34, 0<t2<50, and20<q2+t2<60. In formula (15), it is more preferable that L2 is Ga.

Assuming that the element M1 and L2 are present in the form of oxide,the composition of the sputtering target can be expressed by formula(16) below:(D2)_(x2)(E2)_(100-x2)(mol %)  (16)

where D2 is an oxide of M1, E2 is an oxide of at least one elementselected from the group GL2, and x2 satisfies 0<x2<100, preferably20≦x2≦80.

The oxide-based material layer containing the material expressed byformula (3) can be formed by sputtering the sputtering target shown byformula (16). The experiments of the inventors of the present inventionconfirmed that the element composition (atom %) of the formedoxide-based material layer can have oxygen in 1 to 2 atom % less thanthat element composition (atom %) calculated from the indicatedcomposition (mol %) of the sputtering target.

In formula (16), it is preferable that E2 is Ga₂O₃.

A third method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing at least oneelement selected from the group GM2 consisting of Zr and Hf, at leastone element selected from the group GL2 consisting of La, Ce, A1, Ga,In, Mg and Y, Si, and oxygen (O), comprising forming the oxide-basedmaterial layer by sputtering using a sputtering target containing atleast one element selected from the group GM2, at least one elementselected from the group GL2, Si and oxygen (O). In this case, it ispreferable that the sputtering target contains a material having acomposition expressed by:M2_(q3)Si_(r1)L2_(t3)O_(100-q3-r1-t3)(atom %)  (17)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and q3, r1        and t3 satisfy 0<q3≦32, 0<r1≦32, 3<t3<43, and 20<q3+r1+t3<60.

Furthermore, in the third method for producing of an informationrecording medium of the present invention, the sputtering target furthermay contain at least one element selected from the group GK1 consistingof carbon (C), nitrogen (N) and Cr. In this case, it is preferable thatthe sputtering target contains a material having a composition expressedby:M2_(q3)Si_(r1)L2_(t3)K1_(j1)O_(100-q3-r1-t3-j1)(atom %)  (18)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and K1 is        at least one element selected from the group GK1, and q3, r1, t3        and j1 satisfy 0<q3≦32, 0<r1≦35, 2<t3≦40, 0<j1≦40,        20<q3+r1+t3+j1<80.

In formulae (17) and (18), it is more preferable that M2 is Zr and L2 isGa.

Assuming that the element M2 and L2 are present in the form of oxide andthat Si is present in at least one form of oxide, nitride and carbide,the composition of the sputtering target expressed by formula (17) canbe expressed by formula (19) below:(D3)_(x3)(g)_(z1)(E2)_(100-x3-z1)(mol %)  (19)

-   -   where D3 is at least one element selected from the group GM2, g        is at least one compound selected from the group consisting of        SiO₂, Si₃N₄ and SiC, E2 is at least one element selected from        the group GL2, x3 and z1 satisfy 10≦x3<90, (preferably        10≦x3<70), 0<z1≦50 (preferably 0<z1≦50), and 10<x3+z1≦90        (preferably 20≦x3+z1≦80).

The oxide-based material layer containing the material expressed byformula (5) can be formed by sputtering the sputtering target shown byformula (19). The experiments of the inventors of the present inventionconfirmed that the element composition (atom %) of the formedoxide-based material layer can have oxygen in 1 to 2 atom % less thanthat element composition (atom %) calculated from the indicatedcomposition (mol %) of the sputtering target.

Furthermore, the composition of the sputtering target expressed byformula (18) can be expressed by formula (20) below:(D3)_(x3)(SiO₂)_(z2)(f)_(a1)(E2)_(100-x3-z2-a1)(mol %)  (20)

-   -   where D3 is at least one element selected from the group GM2, f        is at least one compound selected from the group consisting of        SiC, Si₃N₄ and Cr₂O₃, E2 is at least one element selected from        the group GL2, x3, z2 and a1 satisfy 10≦x3<90, 0<z2≦50, 0<a1≦50,        and 10<x3+z2+a1≦90.

The oxide-based material layer containing the material expressed byformula (6) can be formed by sputtering the sputtering target shown byformula (19). The experiments of the inventors of the present inventionconfirmed that the element composition (atom %) of the formedoxide-based material layer can have oxygen in 1 to 2 atom % less thanthat element composition (atom %) calculated from the indicatedcomposition (mol %) of the sputtering target.

In formulae (19) and (20), it is preferable that D3 is ZrO₂, and E2 isGa₂O₃ (i.e., for example, in formula (19), a sputtering target of(ZrO₂)_(x3)(SiO₂)_(z1)(Ga₂O₃)_(100-x3-z1) (mol %))

A fourth method for producing an information recording medium of thepresent invention is a method for producing an information recordingmedium containing an oxide-based material layer containing at least oneelement selected from the group GM2 consisting of Zr and Hf, at leastone element selected from the group GL2 consisting of La, Ce, Al, Ga,In, Mg and Y, Cr, and oxygen (O), comprising forming the oxide-basedmaterial layer by sputtering using a sputtering target containing atleast one element selected from the group GM2, at least one elementselected from the group GL2, Cr and oxygen (O). In this case, it ispreferable that the sputtering target contains a material having acomposition expressed by:M2_(q4)Cr_(u)L2_(t4)O_(100-q4-u-t4)(atom %)  (21)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and q4, u        and t4 satisfy 0<q4≦32, 0<u≦25, 0<t4≦40, and 20<q4+u+t4<60.

Furthermore, in the fourth method for producing of an informationrecording medium of the present invention, the sputtering target mayfurther contain at least one element selected from the group GK2consisting of nitrogen (N) and carbon (C). In this case, it ispreferable that the sputtering target contains a material having acomposition expressed by:M2_(q4)Cr_(u)L2_(t4)Si_(r2)K2_(j2)O_(100-q4-u-t4-r2-j2)(atom %)  (22)

-   -   where M2 is at least one element selected from the group GM2, L2        is at least one element selected from the group GL2, and K2 is        at least one element selected from the group GK2 consisting of        nitrogen (N) and carbon (C), and q4, u, t4, r2 and j2 satisfy        0<q4≦32, 0<u≦25, 0<t4≦40, 0<r2≦30, 0<j2≦40, and        25<q4+u+t4+r2+j2<85.

In formulae (21) and (22), it is more preferable that M2 is Zr and L2 isGa.

The sputtering target containing the materials expressed by formulae(21) and (22) can be expressed by formulae (23) and (24) below:(D3)_(x4)(Cr₂O₃)_(a2)(E2)_(100-x4-a2)(mol %)  (23)

-   -   where D3 is an oxide of at least one element selected from the        group GM2, E2 is an oxide of at least one element selected from        the group GL2, and x4 and a2 satisfy 10≦x4<90, 0<a2≦40, and        10<x4+a2≦90.        (D3)_(x4)(Cr₂O₃)_(a2)(h)_(z3)(E2)_(100-x4-a2-z3)(mol %)  (24)    -   where D3 is an oxide of at least one element selected from the        group GM2, h is at least one compound selected from the group        consisting of Si₃N₄ and SiC, E2 is an oxide of at least one        element selected from the group GL2, and x4, a2 and z3 satisfy        10≦x4<90, 0<a2≦40, 0<z3≦40, and 10<x4+a2+z3≦90.

In formulae (22) and (23), it is preferable that D3 is ZrO₂, and E2 isGa₂O₃.

For example, in the formula (19), in the case of a sputtering target inwhich D3 is ZrO₂, g is SiO₂, and x3=z1, a complex oxide ZrSiO₄containing ZrO₂ and SiO₂ in a substantially equal ratio may be included.Other than that, the material expressed by either one of the formulae(2), (4), (14), (16) and (19) may include a complex oxide such asCeZrO₄, Hf₂La₂O₇, LaAlO₃, LaGaO₃, Mg₂SiO₄, MgSiO₃, MgZrO₃, Y₃Al₅O₁₂,Y₃Ga₅O₁₂, Y_(0.15)Zr_(0.85)O_(1.93), or ZrSiO₄. For example, a complexoxide may be formed of two or more oxides such that MgSiO₃ is present asa complex oxide of MgO and SiO₂, and ZrSiO₄ is present as a complexoxide of ZrO₂ and SiO₂, which provides even better thermal stability.

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings. The following embodiments areonly illustrative, and the present invention is not limited to thefollowing embodiments.

Embodiment 1

As Embodiment 1 of the present invention, an example of an opticalinformation recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 1 shows apartial cross-sectional view of the optical information recordingmedium.

An information recording medium 25 shown in FIG. 1 has the followingstructure. A first dielectric layer 2, a recording layer 4, a seconddielectric layer 6, a light-absorption correction layer 7 and areflective layer 8 are formed on one surface of a substrate 1 in thisorder. Furthermore, a dummy substrate 10 is attached to the reflectivelayer 8 with an adhesive layer 9. In order words, the reflective layer 8is formed on the light-absorption correction layer 7, thelight-absorption correction layer 7 is formed on the second dielectriclayer 6, the second dielectric layer 6 is formed on the recording layer4, and the recording layer 4 is formed on the first dielectric layer 2.The information recording medium having this structure can be used as4.7 GB/DVD-RAM on/from which information is recorded/reproduced withlaser beams in a red region in the vicinity of a wavelength of 660 nm.Laser light 12 is incident on the information recording medium 25 havingthis structure from the side of the substrate 1, and thus information isrecorded and reproduced. The information recording medium 25 isdifferent from the conventional information recording medium 31 shown inFIG. 12 in that the first interface layer 103 and the second interfacelayer 105 are not included.

In Embodiment 1, both the first dielectric layer 2 and the seconddielectric layer 6 are oxide-based material layers. As described above,the oxide-based material layer is one of the following four layers:

(I) An oxide-based material layer containing Zr, at least one elementselected from the group GL1 consisting of La, Ga and In, and oxygen (O).

(II) An oxide-based material layer containing M1 (where M1 is a mixtureof Zr and Hf, or Hf), at least one element selected from the group GL2consisting of La, Ce, Al, Ga, In, Mg and Y, and oxygen (O).

(III) An oxide-based material layer containing at least one elementselected from the group GM2 consisting of Zr and Hf, at least oneelement selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mgand Y, Si, and oxygen (O).

(IV) An oxide-based material layer containing at least one elementselected from the group GM2 consisting of Zr and Hf, at least oneelement selected from the group GL2 consisting of La, Ce, Al, Ga, In, Mgand Y, Cr, and oxygen (O).

In general, for the material of the dielectric layers, the followingproperties are required: being transparent; having a high melting point;not melting during recording; and having good adhesion with a recordinglayer that is made of chalcogenide. Being transparent is a propertynecessary for letting the laser light 12 incident from the side of thesubstrate 1 pass through the dielectric layer and reach the recordinglayer 4. This property is required especially for the first dielectriclayer on the light-incident side. Having a high melting point is aproperty necessary for ensuring that the recording layer is notcontaminated by the material of the dielectric layer when beingirradiated with laser light at the peak power level, and is required forboth the first and the second dielectric layers. When the recordinglayer is contaminated by the material of the dielectric layer, therepeated rewriting performance is deteriorated. Having good adhesionwith the recording layer that is made of chalcogenide is a propertynecessary for ensuring the reliability of the information recordingmedium, and is required for both the first and the second dielectriclayers. Furthermore, it is necessary to select the material of thedielectric layer such that the obtained information recording medium hasa recording sensitivity comparable to or higher than the conventionalinformation recording medium (i.e., a medium in which interface layersare provided between the dielectric layers made of (ZnS)₈₀(SiO₂)₂₀ (mol%) and the recording layer).

Among the components contained in the oxide-based material layers (I) to(IV), an oxide of each of Zr and Hf is transparent and has a highmelting point and excellent thermal stability. Therefore, thesecompounds ensure the repeated rewriting performance of the informationrecording medium. Among the components contained in the oxide-basedmaterial layers (I) to (IV), an oxide of each of La, Ce, Al, Ga, In, Mgand Y also is transparent and has excellent adhesion with the recordinglayer and moisture resistance. Therefore, these compounds ensure themoisture resistance of the information recording medium. An oxide ofeach of Zr and Hf contains, for example, ZrO₂ and HfO₂, respectively. Anoxide of each of La, Ce, Al, Ga, In, Mg and Y contains, for example,La₂O₃, CeO₂, Al₂O₃, Ga₂O₃, In₂O₃, MgO and Y₂O₃, respectively. SiO₂ maybe contained. The melting points of these oxides (literature data) areas follows: about 2700° C. for ZrO₂ and HfO₂; about 2300° C. for La₂O₃;about 2000° C. for CeO₂; about 2000° C. for Al₂O₃; about 1700° C. forGa₂O₃; about 1900° C. for In₂O₃; about 2800° C. for MgO; about 2400° C.for Y₂O₃; and about 1700° C. for SiO₂. All of these melting points arehigher than that of the recording layer, which is 500 to 700° C., andthe possibility that the layers are melted during recording and diffusedin the recording layer is very low. Furthermore, a complex oxidecontaining oxides of at least two elements as above can be formed. Forexample, ZrSiO₄ containing ZrO₂ and SiO₂ in a substantially equal ratioor MgSiO₃ containing MgO and SiO₂ in a substantially equal ratio may beformed.

Layers containing a material in which these oxides are mixed are formedinto the first dielectric layer 2 and the second dielectric layer 6 soas to be in contact with the recording layer 4 as shown in FIG. 1, andthus the information recording medium 25 having excellent repeatedrewriting performance, and good adhesion between the recording layer andthe dielectric layers can be realized.

When the oxide-based material layer (I) is used as the dielectric layers2 and 6, the oxide-based material layer contains a material having acomposition expressed by Zr_(Q1)L1_(T1)O_(100-Q1-T1) (atom %), where L1is at least one element selected from the group GL1, Q1 and T1 satisfy0<Q1<34, 0<T1<50, and 20<Q1+T1<60. When Zr is contained in 34 atom % ormore, the adhesion is deteriorated. When the element L1 is contained in50 atom % or more, the repeated rewriting performance is deteriorated.When oxygen (O) is contained in less than 40 atom %, the transparencybecomes poor. More preferably, 4<Q1<24, 6<T1<37, and 30<Q1+T1<50 aresatisfied.

When the oxide-based material layer (II) is used as the dielectriclayers 2 and 6, the oxide-based material layer contains a materialhaving a composition expressed by M1_(Q2)L2_(T2)O_(100-Q2-T2) (atom %),where M1 is a mixture of Zr and Hf, or Hf, L2 is at least one elementselected from the group GL2, and Q2 and T2 satisfy 0<Q2<34, 0<T2<50, and20<Q2+T2<60. When M1 is contained in 34 atom % or more, the adhesion isdeteriorated. When the element L2 is contained in 50 atom % or more, therepeated rewriting performance is deteriorated. When oxygen (O) iscontained in less than 40 atom %, the transparency becomes poor. Morepreferably, 4<Q2<24, 6<T2<37, and 30<Q2+T2<50 are satisfied.

Examples of constituent elements of the oxide-based material layers (I)and (II) include Zr—La—O, Zr—Hf—La—O, Hf—La—O, Zr—Hf—Ce—O, Hf—Ce—O,Zr—Hf—Al—O, Hf—Al—O, Zr—Ga—O, Zr—Hf—Ga—O, Hf—Ga—O, Zr—In—O, Zr—Hf—In—O,Hf—In—O, Zr—Hf—Mg—O, Hf—Mg—O, Zr—Hf—Y—O, and Hf—Y—O, and it is believedthat they are present in the layer in the form where at least two oxidesare mixed. When the composition of the oxide-based material layer isanalyzed with a X-ray microanalyzer, the atom % of each element (Q1, T1,100-Q1-T1, Q2, T2, 100-Q2-T2) can be obtained. For example, in the caseof Zr—Ga—O, the oxide-based material layer is present substantially inthe form of ZrO₂—Ga₂—O₃. Zr—Ga—O is an excellent material having hightransparency, low thermal conductivity, high adhesion, and highfilm-formation speed.

Regarding other materials than Zr—Ga—O, the elements also are believedto be present in the following form of a mixed material: ZrO₂—La₂O₃,ZrO₂—HfO₂—La₂O₃, HfO₂—La₂O₃, ZrO₂—HfO₂—CeO₂, HfO₂—CeO₂, ZrO₂—HfO₂—Al₂O₃,HfO₂—Al₂O₃, ZrO₂—Ga₂O₃, ZrO₂—HfO₂—Ga₂O₃, HfO₂—Ga₂O₃, ZrO₂—In₂O₃,ZrO₂—HfO₂—In₂O₃, HfO₂—In₂O₃, ZrO₂—HfO₂—MgO, HfO₂—MgO, ZrO₂—HfO₂—Y₂O₃,and HfO₂—Y₂O₃.

When the oxide-based material layer (III) is used as the dielectriclayers 2 and 6, the oxide-based material layer contains a materialhaving a composition expressed by M2_(Q3)Si_(R1)L2_(T3)O_(100-Q3-R1-T3)(atom %), where M2 is at least one element selected from the group GM2,L2 is at least one element selected from the group GL2, and Q3, R1 andT3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60. When M2 or Siis contained in 32 atom % or more, the adhesion is deteriorated. Whenthe element L2 is contained in 43 atom % or more, the repeated rewritingperformance is deteriorated. When oxygen (O) is contained in less than40 atom %, the transparency becomes poor. More preferably, 0<Q3<25,0<R1<25, 6<T3<37, and 30<Q3+R1+T3<50 are satisfied.

Examples of constituent elements of the oxide-based material layers(III) include Zr—Si—La—O, Zr—Si—Hf—La—O, Hf—Si—La—O, Zr—Si—Ce—O,Zr—Si—Hf—Ce—O, Hf—Si—Ce—O, Zr—Si—Al—O, Zr—Si—Hf—Al—O, Hf—Si—Al—O,Zr—Si—Ga—O, Zr—Si—Hf—Ga—O, Hf—Si—Ga—O, Zr—Si—In—O, Zr—Si—Hf—In—O,Hf—Si—In—O, Zr—Si—Mg—O, Zr—Si—Hf—Mg—O, Hf—Si—Mg—O, Zr—Si—Y—O,Zr—Hf—Si—Y—O, Hf—Si—Y—O, and Zr—Si—Ga—Y—O, and it is believed that allof them are present in the layer in the form where at least two oxidesare mixed. For example, Zr—Si—Ga—O is present substantially in the formof ZrO₂—SiO₂—Ga₂O₃. In particular, Zr—Si—Ga—O is an excellent materialhaving high transparency, low thermal conductivity, high adhesion, highrepeated rewriting performance, and high film-formation speed.

Regarding materials other than Zr—Si—Ga—O, the elements also arebelieved to be present in the following form of a mixed material:ZrO₂—SiO₂—La₂O₃, ZrO₂—HfO₂—SiO₂—La₂O₃, HfO₂—SiO₂—La₂O₃, ZrO₂—SiO₂—CeO₂,ZrO₂—HfO₂—SiO₂—CeO₂, HfO₂—SiO₂—CeO₂, ZrO₂—SiO₂—Al₂O₃,ZrO₂—HfO₂—SiO₂—Al₂O₃, HfO₂—SiO₂—Al₂O₃, ZrO₂—SiO₂—Ga₂O₃,ZrO₂—HfO₂—SiO₂—Ga₂O₃, HfO₂—SiO₂—Ga₂O₃, ZrO₂—SiO₂—In₂O₃,ZrO₂—HfO₂—SiO₂—In₂O₃, HfO₂—SiO₂—In₂O₃, ZrO₂—SiO₂—MgO (ZrO₂—MgSiO₃),ZrO₂—HfO₂—SiO₂—MgO, HfO₂—SiO₂—MgO, ZrO₂—SiO₂—Y₂O₃, ZrO₂—HfO₂—SiO₂—Y₂O₃,HfO₂—SiO₂—Y₂O₃, and ZrO₂—SiO₂—Ga₂O₃—Y₂O₃.

The oxide-based material layer (III) may further contain at least oneelement K1 selected from the group GK1 consisting of C, N and Cr. Theoxide-based material layer contains a material having a compositionexpressed by M2_(Q3)Si_(R1)L2_(T3)K1_(J1)O_(100-Q3-R1-T3-J1) (atom %),where M2 is at least one element selected from the group GM2, L2 is atleast one element selected from the group GL2, and K1 is at least oneelement selected from the group GK1, and Q3, R1, T3 and J1 satisfy0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80. When oxidesof M2 and Si are included, the repeated rewriting performance isimproved, and an oxide of Si also serves to improve the transparency. Anoxide of the element L2 has high transparency and excellent adhesionwith the recording layer. When the element K1 is included, the thermalconductivity of the oxide-based material layer can be reduced, or theadhesion with the recording layer can be further improved. Morespecifically, when the element K1 is C, it is expected that a carbide ofSi is present together with oxides of M2 and L2, and these oxides canform a complex structure without being mixed with each other. Similarly,when K1 is N, it is expected that a nitride of Si is present togetherwith oxides of M2 and L2, and these oxides can form a complex structurewithout being mixed with each other. It is believed that a complexstructure makes it difficult for heat to be transmitted, so that thethermal conductivity can be reduced. An oxide of Cr contained in thegroup GK1 has good adhesion with the recording layer. For these seasonsabove, a system of M2_(Q3)Si_(R1)L2_(T3)K1_(J1)O_(100-Q3-R1-T3-J1) (atom%) is an excellent oxide-based material layer. Preferable atomconcentrations are shown above. When M2 is contained in 32 atom % ormore or Si is contained in 35 atom % or more, the adhesion with therecording layer is deteriorated. When the element L2 is contained in 40atom % or more, the repeated rewriting performance is deteriorated. Whenthe element K1 exceeds 40 atom %, the transparency is deteriorated. Inthis oxide-based material layer, when oxygen (O) is contained in lessthan 20 atom %, the transparency becomes poor. In a more preferable atomconcentration, 0<Q3<25, 0<R1<25, 6<T3<37, 0<J1<35, and 30<Q3+R1+T3+J1<50are satisfied.

Examples of constituent elements when the element K1 is contained in theoxide-based material layers (III) include Zr—Si—La—Cr—O, Zr—Si—La—N—O,Zr—Si—La—C—O, Zr—Si—Ga—Cr—O, Zr—Si—La—N—O, Zr—Si—La—C—O, Zr—Si—Y—Cr—O,Zr—Si—Y—N—O, and Zr—Si—Y—C—O, and it is believed that they are presentin the layer in the form where at least two oxides are mixed. Forexample, Zr—Si—La—Cr—O is present substantially in the form ofZrO₂—SiO₂—La₂O₃—Cr₂O₃. In particular, Zr—Si—Ga—Cr—O is an excellentmaterial having high transparency, low thermal conductivity, highadhesion, high repeated rewriting performance, and high film-formationspeed.

Regarding other materials than Zr—Si—La—Cr—O, the elements also arebelieved to be present in the following form of a mixed material:ZrO₂—SiO₂—La₂O₃—Si₃N₄, ZrO₂—SiO₂—La₂O₃—SiC, ZrO₂—SiO₂—Ga₂O₃—Si₃N₄,ZrO₂—SiO₂—Ga₂O₃—SiC, ZrO₂—SiO₂—Ga₂O₃—Cr₂O₃, ZrO₂—SiO₂—In₂O₃—Si₃N₄,ZrO₂—SiO₂—In₂O₃—SiC, ZrO₂—SiO₂—In₂O₃—Cr₂O₃, and HfO₂—SiO₂—La₂O₃—Si₃N₄,HfO₂—SiO₂—La₂O₃—SiC, HfO₂—SiO₂—La₂O₃—Cr₂O₃, HfO₂—SiO₂—Ga₂O₃—Si₃N₄,HfO₂—SiO₂—Ga₂O₃—SiC, HfO₂—SiO₂—Ga₂O₃—Cr₂O₃, HfO₂—SiO₂—In₂O₃—Si₃N₄,HfO₂—SiO₂—In₂O₃—SiC, and HfO₂—SiO₂—In₂O₃—Cr₂O₃.

Furthermore, Si may form only a carbide or a nitride, and in this case,the elements are believed to be present in the following form of a mixedmaterial: ZrO₂—La₂O₃—Si₃N₄, ZrO₂—La₂O₃—SiC, ZrO₂—Ga₂O₃—Si₃N₄,ZrO₂—Ga₂O₃—SiC, ZrO₂—In₂O₃—Si₃N₄, ZrO₂—In₂O₃—SiC, ZrO₂—In₂O₃—Cr₂O₃, andHfO₂—CeO₂—Si₃N₄, HfO₂—CeO₂—SiC, HfO₂—Al₂O₃—Si₃N₄, HfO₂—Ga₂O₃—Si₃N₄,HfO₂—Ga₂O₃—SiC, HfO₂—In₂O₃—Si₃N₄, and HfO₂—In₂O₃—SiC.

When the oxide-based material layer (IV) is used as the dielectriclayers 2 and 6, the oxide-based material layer contains a materialhaving a composition expressed by M2_(Q4)Cr_(U)L2_(T4)O_(100-Q4-U-T4)(atom %), where M2 is at least one element selected from the group GM2consisting of Zr and Hf, L2 is at least one element selected from thegroup GL2, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and20<Q4+U+T4<60. When the element M4 is contained in 32 atom % or more, inparticular, the adhesion with the recording layer is deteriorated. WhenCr is included, the adhesion with the recording layer is improved. WhenCr is contained in 25 atom % or more, the transparency of theoxide-based material layer is deteriorated. When the element L2 iscontained in 40 atom % or more, the repeated rewriting performance isdeteriorated. When oxygen (O) is contained in less than 40 atom %, thetransparency becomes poor. More preferably, 0<Q4<25, 0<U<18, 6<T4<20,and 30<Q4+U+T4<50 are satisfied.

Examples of constituent elements of the oxide-based material layers inthis case include Zr—Cr—La—O, Zr—Cr—Hf—La—O, Hf—Cr—La—O, Zr—Cr—Ce—O,Zr—Cr—Hf—Ce—O, Hf—Cr—Ce—O, Zr—Cr—Al—O, Zr—Cr—Hf—Al—O, Hf—Cr—Al—O,Zr—Cr—Ga—O, Zr—Cr—Hf—Ga—O, Hf—Cr—Ga—O, Zr—Cr—In—O, Zr—Cr—Hf—In—O,Hf—Cr—In—O, Zr—Cr—Hf—Mg—O, Hf—Cr—Mg—O, Zr—Cr—Mg—O, Zr—Cr—Y—O,Zr—Hf—Cr—Y—O, and Hf—Cr—Y—O, and it is believed that they are present inthe layer in the form where at least two oxides are mixed. For example,Zr—Cr—Ga—O is present substantially in the form of ZrO₂—Cr₂O₃—Ga₂O₃. Inparticular, Zr—Cr—Ga—O is an excellent material having hightransparency, low thermal conductivity, high adhesion, high repeatedrewriting performance, and high film-formation speed.

Regarding other materials than Zr—Cr—Ga—O, the elements are believed tobe present in the following form of a mixed material: ZrO₂—Cr₂O₃—La₂O₃,ZrO₂—HfO₂—Cr₂O₃—La₂O₃, HfO₂—Cr₂O₃—La₂O₃, ZrO₂—Cr₂O₃—CeO₂,ZrO₂—HfO₂—Cr₂O₃—CeO₂, HfO₂—Cr₂O₃—CeO₂, ZrO₂—Cr₂O₃—Al₂O₃,ZrO₂—HfO₂—Cr₂O₃—Al₂O₃, HfO₂—Cr₂O₃—Al₂O₃, ZrO₂—Cr₂O₃—Ga₂O₃,ZrO₂—HfO₂—Cr₂O₃—Ga₂O₃, HfO₂—Cr₂O₃—Ga₂O₃, ZrO₂—Cr₂O₃—In₂O₃,ZrO₂—HfO₂—Cr₂O₃—In₂O₃, HfO₂—Cr₂O₃—In₂O₃, ZrO₂—Cr₂O₃—MgO,ZrO₂—HfO₂—Cr₂O₃—MgO, HfO₂—Cr₂O₃—MgO, ZrO₂—Cr₂O₃—Y₂O₃,ZrO₂—HfO₂—Cr₂O₃—Y₂O₃, HfO₂—Cr₂O₃—Y₂O₃, and ZrO₂—Cr₂O₃—Ga₂O₃—Y₂O₃.

FIG. 7 shows the composition range of a material expressed by formula(1) or (3). In FIG. 7, the coordinate is (M, L, O), and the unit is atom%. The coordinate M is Zr or the element M1, and the coordinate L is theelement L1 or L2. In this diagram, the material expressed by formula (1)or (3) is a material that falls into the range (the line is notincluded) enclosed by the segments connecting a (34, 26, 40), b (10, 50,40), c (0, 50, 50), d (0, 20, 80), e (20, 0, 80), and f (34, 0, 66).

It is preferable that the oxide-based material layer (I) contains anoxide of Zr and an oxide of an element selected from the group GL1 in acombined content of 90 mol % or more. It is preferable that theoxide-based material layer (II) contains an oxide of M1 and an oxide ofan element selected from the group GL2 in a combined content of 90 mol %or more. It is preferable that the oxide-based material layer (III)contains an oxide of an element selected from the group GM2, an oxide ofan element selected from the group GL2 and an oxide of Si in a combinedcontent of 90 mol % or more. It is preferable that the oxide-basedmaterial layer (IV) contains an oxide of an element selected from thegroup GM2, an oxide of an element selected from the group GL2 and anoxide of Cr in a combined content of 90 mol % or more. The thermalstability and the moisture resistance of the layer containing thesecompounds in a combined content of 90 mol % or more are not changed evenif a third component other than those is included, and this layerpreferably can be used as the first dielectric layer 2 and the seconddielectric layer 6. The third component is a substance that isinevitably contained when forming the oxide-based material layer, asubstance that is allowed to be added, or a substance that is inevitablyformed. As the third component, for example, dielectrics, metal,semi-metal, semiconductors, and or non-metal can be contained in theoxide-based material layer. The dielectrics can be contained in about 10mol %, and the content of metal preferably is 2 mol % or less. Thecontent of semi-metal, semiconductors, or non-metal preferably is 5 mol% or less.

Specific examples of dielectrics contained as the third componentinclude Bi₂O₃, Cr₂O₃, CuO, Cu₂O, Er₂O₃, FeO, Fe₂O₃, Fe₃O₄, Ho₂O₃, GeO,GeO₂, and a mixture of In₂O₃ and SnO₂, Mn₃O₄, Nb₂O₅, Nd₂O₃, NiO, Sb₂O₃,Sb₂O₄, Sc₂O₃, SiO₂, Sm₂O₃, SnO, SnO₂, Ta₂O₅, Tb₄O₇, TeO₂, TiO₂, WO₃,Yb₂O₃, ZnO, AlN, BN, CrN, Cr₂N, HfN, NbN, Si₃N₄, TaN, TiN, VN, ZrN, B₄C,Cr₃C₂, HfC, Mo₂C, NbC, SiC, TaC, TiC, VC, W₂C, WC and ZrC.

Specific examples of metal contained as the third component include Sc,Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ni, Pd, Pt, Cu, Ag, Au, Zn,La, Ce, Nd, Sm, Gd, Tb, Dy and Yb.

Specific examples of semi-metal and semiconductors contained as thethird component include B, Al, C, Si, Ge and Sn. Specific examples ofnon-metal contained as the third component include Sb, Bi, Te, and Se.

The first dielectric layer 2 and the second dielectric layer 6 serve toadjust the light absorptance Ac (%) of the recording layer 4 in thecrystalline phase and the light absorptance Aa (%) of the recordinglayer 4 in the amorphous phase, the light reflectance Rc (%) of theinformation recording medium 25 when the recording layer 4 is in thecrystalline phase and the light reflectance Ra (%) of the informationrecording medium 25 when the recording layer 4 is in the amorphousphase, and the phase difference Δφ of light between a crystallineportion and an amorphous portion of the recording layer 4 of theinformation recording medium 25 by changing the optical path length(i.e., a product nd of the refractive index n of the dielectric layersand the thickness d of the dielectric layers). In order to improve thesignal quality by increasing the reproduction signal amplitude of arecording mark, it is preferable that the difference in the reflectance(|Rc−Ra|) or the reflectance ratio (Rc/Ra) is large. Furthermore, italso is preferable that Ac and Aa are large so that the recording layer4 absorbs laser light. The optical path lengths of the first dielectriclayer 2 and the second dielectric layer 6 are determined so as tosatisfy these conditions at the same time. The optical path lengths thatsatisfy these conditions can be determined precisely by calculationsbased on a matrix method (e.g., see the third chapter of “Wave Optics”by Hiroshi Kubota, published by Iwanami Shinsho, 1971).

The above-described oxide-based material layer has a refractive indexthat varies depending on the composition. The optical path length nd canbe expressed as nd=aλ, where n is the refractive index of the dielectriclayer, d (nm) is the thickness of the dielectric layer, and λ (nm) isthe wavelength of the laser light 12. Here, a is a positive number. Inorder to improve the signal quality by increasing the reproductionsignal amplitude of a recording mark of the information recording medium25, for example, it is preferable that 15%≦Rc and Ra≦2%. In order toeliminate or minimize mark strain due to rewriting, it is preferable tosatisfy 1.1≦Ac/Aa. The optical path lengths (aλ) of the first dielectriclayer 2 and the second dielectric layer 6 were obtained precisely so asto satisfy these preferable conditions at the same time by calculationsbased on a matrix method. The thickness d of the dielectric layers wasobtained based on the obtained optical path length (aλ), and λ and n. Asa result, it was found out that, for example, when the first dielectriclayer 2 was formed of a material expressed byZr_(Q3)Si_(R1)Ga_(T3)O_(100-Q3-R1-T3) (atom %) (which can be expressedas (ZrO₂)_(X3)(SiO₂)_(Z1)(Ga₂O₃)_(100-X3-Z1) (mol %)) and having arefractive index n of 1.7 to 2.3, the thickness preferably was 100 nm to200 nm. It also was found that when the second dielectric layer 6 wasformed of this material, the thickness preferably was 20 nm to 80 nm.

In the information recording medium of Embodiment 1, the oxide-basedmaterial layer of the present invention is used both in the firstdielectric layer 2 and the second dielectric layer 6, for example.However, it is possible to use the same material, materials having thesame constituent elements but different composition ratios, or materialshaving different constituent elements. For example, Zr₆Si₆Ga₂₅O₆₃ (atom%) can be used for the first dielectric layer 2 and the seconddielectric layer 6. Alternatively, Zr₁₆Si₄Ga₁₇O₆₃ (atom %) can be usedfor the first dielectric layer 2, and Zr₃Si₁₃Ga₂₁O₆₃ (atom %) can beused for the second dielectric layer 6. Alternatively, Zr₁₃Ga₁₃Y₁₂O₆₂(atom %) can be used for the first dielectric layer 2, andHf₃Zr₅Si₈La₁₂Mg₁₀O₆₂ (atom %) can be used for the second dielectriclayer 6.

The substrate 1 generally is a transparent disk-like plate. Guidegrooves for guiding laser light may be formed on a surface on which thedielectric layers and the recording layer or the like are to be formed.When guide grooves are formed on the substrate, groove portions and landportions are formed when the cross-section of the substrate is viewed.In this specification, the surface nearer to the incident side of thelaser light 12 is referred to as “groove surface” for convenience, andthe surface farther from the incident side of the laser light 12 isreferred to as “land surface” for convenience. In FIG. 1, the bottomsurface 23 of the guide grooves in the substrate corresponds to thegroove surface, and the top surface 24 corresponds to the land surface.This applies to FIGS. 2, 3, and 4.

The step between the groove surface 23 and the land surface 24 of thesubstrate 1 in the embodiment shown in FIG. 1 preferably is 40 nm to 60nm. Also in the substrate 1 constituting the information recording mediaof embodiments shown in FIGS. 2, 3, and 4, it is preferable that thestep between the groove surface 23 and the land surface 24 is in thisrange. The distance between the grooves and the lands (from the centerof the groove surface 23 to the center of the land surface 24) is, forexample, about 0.615 μm in the case of 4.7 GB/DVD-RAM. It is preferablethat the surface on which the layers are not formed is smooth.

As a material of the substrate 1, resin such as polycarbonate, amorphouspolyolefin or polymethyl methacrylate (PMMA) or glass can be used. Inview of the formability, the cost, and the mechanical strength,polycarbonate is used preferably. In the embodiment shown, the thicknessof the substrate 1 is about 0.5 to 0.7 mm.

The recording layer 4 is a layer in which a recording mark is formed bylight irradiation or the application of electric energy to cause phasetransformation between a crystalline phase and an amorphous phase. Ifthe phase transformation is reversible, erasure and rewriting can beperformed.

As a reversible phase transformation material, it is preferable to useGe—Sb—Te or Ge—Sn—Sb—Te, which are high speed crystallization materials.More specifically, in the case of Ge—Sb—Te, GeTe—Sb₂Te₃ pseudo-binarysystem composition is preferable. In this case, it is preferable thatSb₂Te₃≦GeTe≦50Sb₂Te₃ is satisfied. In the case of GeTe<Sb₂Te₃, thechange in the reflected light amount between before and after recordingis small so that the quality of read-out signals is deteriorated. In thecase of 50Sb₂Te₃<GeTe, the change in volume between the crystallinephase and the amorphous phase is large, and the repeated rewritingperformance is deteriorated.

Ge—Sn—Sb—Te has a higher crystallization rate than that of Ge—Sb—Te.Ge—Sn—Sb—Te is, for example, a substance in which a part of Ge of aGeTe—Sb₂Te₃ pseudo-binary composition is substituted with Sn. In therecording layer 4, it is preferable that the content of Sn is 20 atom %or less. When it exceeds 20 atom %, the crystallization rate is toohigh, and therefore the stability of the amorphous phase is impaired,and the reliability of recording marks is deteriorated. The content ofSn can be adjusted in accordance with the recording conditions.

The recording layer 4 can be formed of a material containing Bi such asGe—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, or Ge—Sn—Sb—Bi—Te. Bi iscrystallized more readily than Sb. Therefore, the crystallization rateof the recording layer 4 can be improved by substituting at least a partof Sb with Bi.

Ge—Bi—Te is a mixture of GeTe and Bi₂Te₃. In this mixture, it ispreferable that 4Bi₂Te₃≦GeTe≦50Bi₂Te₃ is satisfied. In the case ofGeTe<4Bi₂Te₃, the crystallization temperature is reduced, and thearchival characteristic tends to be deteriorated. In the case of50Bi₂Te₃<GeTe, the change in volume between the crystalline phase andthe amorphous phase is large, and the repeated rewriting performance isdeteriorated.

Ge—Sn—Bi—Te corresponds to a substance in which a part of Ge of Ge—Bi—Teis substituted with Sn. It is possible to control the crystallizationrate in accordance with the recording conditions by adjusting theconcentration of substitution with Sn. Sn substitution is more suitablefor fine tuning of the crystallization rate of the recording layer thanBi substitution. In the recording layer, it is preferable that thecontent of Sn is 10 atom % or less. When it exceeds 10 atom %, thecrystallization rate is too high, and therefore the stability of theamorphous phase is impaired, and the reliability of recording marks isdeteriorated.

Ge—Sn—Sb—Bi—Te corresponds to a substance in which a part of Ge ofGe—Sb—Te is substituted with Sn, and a part of Sb is substituted withBi. This corresponds to a mixture of GeTe, SnTe, Sb₂Te₃ and Bi₂Te₃. Inthis mixture, it is possible to control the crystallization rate inaccordance with the recording conditions by adjusting the Snsubstitution concentration and the Bi substitution concentration. InGe—Sn—Sb—Bi—Te, it is preferable that2(Sb—Bi)₂Te₃≦(Ge—Sn)Te≦50(Sb—Bi)₂Te₃ is satisfied. In the case of(Ge—Sn)Te<2(Sb—Bi)₂Te₃, the change in the reflected light amount betweenbefore and after recording is small so that the quality of read-outsignals is deteriorated. In the case of 50(Sb—Bi)₂Te₃<(Ge—Sn)Te, thechange in volume between the crystalline phase and the amorphous phaseis large, and the repeated rewriting performance is deteriorated. In therecording layer, it is preferable that the content of Bi is 10 atom % orless and that the content of Sn is 20 atom % or less. When the contentsof Bi and Sn are in the above-described ranges, good preservability ofrecording marks can be obtained.

As other materials causing reversible phase transformation, materialscontaining Ag—In—Sb—Te, Ag—In—Sb—Te—Ge or Sb—Te containing 70 atom % ormore of Sb can be used.

As an irreversible phase transformation material, it is preferable touse TeOx+α (α is Pd, Ge or the like), as disclosed in, for example,JP7-25209B (Japanese Patent No. 2006849). The information recordingmedium in which the recording layer is made of an irreversible materialis a so-called write-once type that allows recording only once. In suchan information recording medium as well, there is a problem that atomsin the dielectric layer are diffused into the recording layer due toheat during recording, and the quality of signals is deteriorated.Therefore, the present invention can apply preferably, not only to arewritable information recording medium, but also to a write-once typeinformation recording medium.

When the recording layer 4 is formed of a material whose phase ischanged reversibly (i.e., the information recording medium is arewritable information recording medium), it is preferable that thethickness of the recording layer 4 is 20 nm or less, and more preferably15 nm or less.

For the recording layer, a magneto-optical material on which recording,erasure and reproduction are performed by application of a magneticfield and irradiation of light may be used. A material containing atleast one element selected from a rare earth metal group of consistingof Tb, Gd, Dy, Nd, and Sm, and at least one element selected from atransition metal group of consisting of Sc, Cr, Fe, Co, and Ni can beused. More specifically, Tb—Fe, Tb—Fe—Co, Gd—Fe, Gd—Fe—Co, Dy—Fe—Co,Nd—Fe—Co, Sm—Co, Tb—Fe—Ni, Gd—Tb—Fe—Co, and Dy—Sc—Fe—Co can be used. Inthe case where the material of the recording layer is a magneto-opticalmaterial, the structure of the information recording medium does notnecessarily match those shown in FIGS. 1 to 6, but the oxide-basedmaterial layer of the present invention can be used as a dielectriclayer, regardless of the recording material or the layer structure.

The light-absorption correction layer 7 serves to adjust the ratio Ac/Aaof the light absorptance Ac when the recording layer 4 is in acrystalline state and the light absorptance Aa when the recording layer4 is in an amorphous state, and prevent the mark shape from beingdistorted at the time of rewriting. It is preferable that thelight-absorption correction layer 7 is formed of a material that has ahigh refractive layer and absorbs light in a suitable amount. Forexample, the light-absorption correction layer 7 can be formed of amaterial having a refractive index n of 3 or more and 6 or less and anextinction coefficient k of 1 or more and 4 or less. More specifically,it is preferable to use a material selected from amorphous Ge alloyssuch as Ge—Cr, Ge—Mo, and Ge—W, amorphous Si alloys such as Si—Cr,Si—Mo, and Si—W, and crystalline metals, semi-metal and semiconductormaterials such as Ti, Zr, Nb, Ta, Cr, Mo, W, SnTe and PbTe. It ispreferable that the thickness of the light-absorption correction layer 7is 20 nm to 60 nm.

The reflective layer 8 serves to facilitate a change to the amorphousstable, optically by increasing the light amount that is absorbed by therecording layer 4, and thermally by diffusing heat generated in therecording layer 4 to cool the recording layer 4 rapidly. Furthermore,the reflective layer 8 protects the multilayer including thelight-absorption correction layer 7, the recording layer 4, thedielectric layers 2 and 6 from the environment of use. As a material ofthe reflective layer 8, for example, a single metal material having ahigh thermal conductivity such as Al, Au, Ag, and Cu can be used. Thereflective layer 8 may be formed of a material in which another elementor a plurality of other elements are added to one or a plurality ofelements selected from the aforementioned metal materials for thepurpose of improving the moisture resistance and/or adjusting thethermal conductivity or optical characteristics (i.e., lightreflectance, light absorptance or light transmission). Morespecifically, alloy materials such as Al—Cr, Al—Ti, Ag—Pd, Ag—Pd—Cu,Ag—Pd—Ti, or Au—Cr can be used. All of these materials have excellentcorrosion resistance and a rapid cooling function and thus are excellentmaterials. The same purposes also can be attained by forming thereflective layer 8 with at least two layers. The thickness of thereflective layer 8 preferably is 50 to 180 nm, and more preferably 60 nmto 120 nm.

In the information recording medium 25 shown in FIG. 1, the adhesivelayer 9 is provided to attach the dummy substrate 10 to the reflectivelayer 8. The adhesive layer 9 may be formed of a material having highheat resistance and high adhesion, for example, an adhesive resin suchas UV curable resin. More specifically, the adhesive layer 9 can beformed of a material having acrylic resin as the main component or amaterial having epoxy resin as the main component. A protective layerwith the thickness of 2 to 20 μm that is made of UV curable resin may beprovided on a surface of the reflective layer 8, if necessary, beforeforming the adhesive layer 9. The thickness of the adhesive layer 9preferably is 15 to 40 μm, and more preferably 20 to 35 μm.

The dummy substrate 10 enhances the mechanical strength of theinformation recording medium 25 and protects the laminate from the firstdielectric layer 102 to the reflective layer 8. The preferable materialof the dummy substrate 10 is the same as that of the substrate 1. In theinformation recording medium 25 to which the dummy substrate 10 isattached, it is preferable that the dummy substrate 10 and the substrate1 are formed of substantially the same material and have the samethickness so as to prevent mechanical curvature or distortion fromoccurring.

The information recording medium of Embodiment 1 is a one-surface diskhaving one recording layer. The information recording medium of thepresent invention may have two recording layers. For example, inEmbodiment 1, two multilayered products obtained by laminating layers upto the reflective layers 8 are attached via an adhesive layer with thereflective layers 8 opposed to each other, so that an informationrecording medium having a two-surface structure can be obtained. In thiscase, the two multilayered products are attached by forming the adhesivelayer with a slow-cure resin and utilizing the action of pressure andheat. In the case where a protective layer is provided on the reflectivelayer 8, multilayered products obtained by laminating layers up to theprotective layers are attached with the protective layers opposed toeach other, so that an information recording medium having a two-surfacestructure can be obtained.

Next, a method for producing the information recording medium 25 ofEmbodiment 1 will be described. The information recording medium 25 isproduced by performing the step (step a) of arranging the substrate 1(e.g., thickness: 0.6 mm) provided with guide grooves (groove surfaces23 and land surfaces 24) in a film forming apparatus and forming thefirst dielectric layer 2 on the surface of the substrate 1 on which theguide grooves are formed, the step (step b) of forming the recordinglayer 4, the step (step c) of forming the second dielectric layer 6, thestep (step d) of forming the light-absorption correction layer 7 and thestep (step e) of forming the reflective layer 8 in this order, furtherby performing the step of forming the adhesive layer 9 on the surface ofthe reflective layer 8 and the step of attaching the dummy substrate 10.In this specification including the following description, with respectto each layer, when “surface” is referred to, unless otherwise, itrefers to the surface exposed when each layer is formed (surfaceperpendicular to the thickness direction).

First, the step a of the forming the first dielectric layer 2 on thesurface on which the guide grooves are formed of the substrate 1 isperformed. The step a is performed by sputtering. First, an example of asputtering apparatus used in this embodiment will be described. FIG. 11shows the manner in which a film is formed with a sputtering apparatus.As shown in FIG. 11, this sputtering apparatus is configured such that avacuum pump (not shown) is connected to a vacuum container 39 through anexhaust port 32, and a high vacuum is maintained in the vacuum container39. A predetermined flow rate of gas can be supplied from a gas supplyport 33. A substrate 35 (the substrate herein refers to a base materialon which films are deposited) is mounted on a positive electrode 34. Thevacuum container 39 and the substrate 35 are maintained to be positiveby grounding the vacuum container 39. A sputtering target 36 isconnected to a negative electrode 37, and is connected to a power sourcevia a switch (not shown). A thin film is formed on the substrate 35 withparticles released from the sputtering target 36 by applying apredetermined voltage between the positive electrode 34 and the negativeelectrode 37. The same apparatus can be used in sputtering in thefollowing steps.

The sputtering in the step a is performed in an Ar gas atmosphere usinga high frequency power. The sputtering may be performed in a mixed gasatmosphere with Ar gas and 5% or less of at least one of oxygen gas andnitrogen gas. Since the sputtering target is a mixture of oxides,reactive sputtering is not necessary, and an oxide-based material layercan be formed even in an atmosphere of Ar gas alone. For the conditionsof sputtering, since the number of elements is small, the conditions canbe determined easily, and thus this method is suitable for massproduction. When more than 5% of oxygen gas and/or nitrogen gas aremixed with Ar gas, an oxide in a form having a different valence than adesired valence may be formed, depending on the element, and thus anoxide-based material layer having desired characteristics may not beformed. A direct current power that generates pulses may be used, ifsputtering continues stably.

As the sputtering target used in the step a, any one of the followingtargets can be used:

(i) A sputtering target containing Zr, at least one element selectedfrom the group GL1 consisting of La, Ga and In, and oxygen (O) (e.g., asputtering target containing an oxide of Zr and an oxide of at least oneelement selected from the group GL1).

(ii) A sputtering target containing M1 (where M1 is a mixture of Zr andHf, or Hf), at least one element selected from the group GL2 consistingof La, Ce, Al, Ga, In, Mg and Y, and oxygen (O) (e.g., a sputteringtarget containing an oxide of M1 and an oxide of at least one elementselected from the group GL2).(iii) A sputtering target containing at least one element selected fromthe group GM2 consisting of Zr and Hf, at least one element selectedfrom the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, Si, andoxygen (O) (e.g., a sputtering target containing an oxide of at leastone element selected from the group GM2, an oxide of at least oneelement selected from the group GL2 and an oxide of Si).(iv) A sputtering target containing at least one element selected fromthe group GM2 consisting of Zr and Hf, at least one element selectedfrom the group GL2 consisting of La, Ce, Al, Ga, In, Mg and Y, Cr, andoxygen (O) (e.g., a sputtering target containing an oxide of at leastone element selected from the group GM2, an oxide of at least oneelement selected from the group GL2 and an oxide of Cr).

Regarding the sputtering targets (i) to (iv), it is preferable that theoxides of essential elements (e.g., an oxide of Zr and an oxide of atleast one element selected from the group GL1 in the case of (i)) areincluded in a combined amount of 98 mol % or more. In this case, forless than 2 mol %, which is the remaining ratio, the third component asdescribed above that is allowed to be contained in the oxide-basedmaterial layer may be included.

More specifically, for example, the following sputtering targets can beused: a sputtering target containing a material expressed by(D1)_(x1)(E1)_(100-x1) (mol %), where D1 is an oxide of Zr, E1 is anoxide of at least one element selected from the group GL1, and x1satisfies 0<x1<100; a sputtering target containing a material expressedby (D2)_(x2)(E2)_(100-x2) (mol %), where D2 is an oxide of M1, E2 is anoxide of at least one element selected from the group GL2, and x2satisfies 0<x2<100; and a sputtering target containing a materialexpressed by (D3)_(x3)(SiO)_(z1)(E2)_(100-x3-z1) (mol %), where D3 is atleast one element selected from the group GM2, E2 is at least oneelement selected from the group GL2, x3 and z1 satisfy 10≦x3<90,0<z1≦50, and 10<x3+z1≦90. When these sputtering targets are used, thefollowing oxide-based material layers can be formed: an oxide-basedmaterial layer containing a material expressed byZr_(Q1)L1_(T1)O_(100-Q1-T1) (atom %), where L1 is at least one elementselected from the group GL1, and Q1 and Ti satisfy 0<Q1<34, 0<T1<50, and20<Q1+T1<60; an oxide-based material layer containing a materialexpressed by M1_(Q2)L2_(T2)O_(100-Q2-T2) (atom %), where M1 is a mixtureof Zr and Hf, or Hf, L2 is at least one element selected from the groupGL2, and Q2 and T2 satisfy 0<Q2<34, 0<T2<50, and 20<Q2+T2<60; and anoxide-based material layer containing a material expressed byM2_(Q3)Si_(R1)L2_(T3)O_(100-Q3-R1-T3) (atom %), where M2 is at least oneelement selected from the group GM2, L2 is at least one element selectedfrom the group GL2, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43,and 20<Q3+R1+T3<60. In particular, when a ZrO₂—SiO₂—Ga₂O₃ sputteringtarget is used, an excellent Zr—Ga—O oxide-based material layer can beformed. When the ZrO₂ and SiO₂ are included in the same molconcentration, ZrSiO₄, which is a complex oxide of ZrO₂ and SiO₂, can beformed. In this case, for example, a sputtering target containing amaterial expressed by (ZrSiO₄)_(a)(E2)_(100-a) (mol %) (where asatisfies 11≦a≦82) can be used. When this sputtering target is used, anoxide-based material layer containing a material expressed byZr_(Q3)Si_(R1)L2_(T3)O_(100-Q3-R1-T3) (atom %) can be formed. Forexample, a sputtering target expressed by(ZrO₂)_(x3)(SiO₂)_(z1)(Ga₂O₃)_(100-x3-z1) (mol %) generally is producedby mixing powders of ZrO₂, SiO₂ and Ga₂O₃ rather than mixing powders ofZr, Si, Ga and O (Ga and O have low melting points, and it is difficultto handle them at room temperature), and solidifying the powders underoptimal conditions of temperature and pressure. Furthermore, since someelements can form a plurality of oxides having the same elements butdifferent valences, it is important to express them in such a manner as(D1)_(x1)(E1)_(100-x1) (mol %), (D2)_(x2)(E2)_(100-x2) (mol %), or(D3)_(x3)(SiO₂)_(z1)(E2)_(100-x3-z1) (mol %), which indicate the radioof oxides, in order to form a desired oxide-based material layer. Ifnecessary, the powders of the thus expressed sputtering targets can beanalyzed with a X-ray microanalyzer or the like, and the compositionratio of each element can be obtained as Zr_(q1)L1_(t1)O_(100-q1-t1)(atom %), M1_(q2)L2_(t2)O_(100-q2-t2) (atom %),M2_(q3)Si_(r1)L2_(t3)O_(100-q3-r1-t3) (atom %), in the same manner asthe oxide-based material layers.

FIG. 8 shows the composition range when SiO₂ is used as g in thematerial expressed by formula (19). In FIG. 8, the coordinate is (D3,SiO₂, E2), and the unit is mol %. In FIG. 8, the material expressed byformula (20) is a material that falls into the range (the line g-h-i-jis included, and the line g-j is not included) enclosed by the segmentsconnecting g (90, 0, 10), h (40, 50, 10), i (10, 50, 40), and j (10, 0,90).

Next, the step b is performed to form the recording layer 4 on thesurface of the first dielectric layer 2. The step b also is performed bysputtering. Sputtering is performed in an Ar gas atmosphere or a mixedgas atmosphere of Ar gas and N₂ gas, using a direct current power. Asthe sputtering target, a sputtering target containing any one materialselected from the group consisting of Ge—Sb—Te, Ge—Sn—Sb—Te, Ge—Bi—Te,Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, Ge—Sn—Sb—Bi—Te, Ag—In—Sb—Te and Sb—Te is used.The recording layer 4 that has been formed is in an amorphous state.

Next, the step c is performed to form the second dielectric layer 6 onthe surface of the recording layer 4. The step c is performed in thesame manner as the step a. The second dielectric layer 6 can be formedby using a sputtering target containing the same oxides at the sameratio as the first dielectric layer 2, a sputtering target containingthe same oxides at a different ratio, or a sputtering target containingdifferent oxides selected from each group.

For example, in the steps a and c, a sputtering target containing(ZrO₂)₃₀(SiO₂)₂₀(Ga₂O₃)₅₀ (mol %) may be used. Alternatively, in thestep a, a sputtering target containing (ZrO₂)₃₀(SiO₂)₂₀(Ga₂O₃)₅₀ (mol %)may be used, and in the step c, a sputtering target containing(ZrO₂)₄₀(SiO₂)₃₀(Ga₂O₃)₃₀ (mol %) may be used. Alternatively, in thestep a, a sputtering target containing a HfO₂—Ga₂O₃ mixed material maybe used, and in the step c, a sputtering target containing aZrO₂—SiO₂—Y₂O₃ mixed material may be used.

Next, the step d is performed to form the light-absorption correctionlayer 7 on the surface of the second dielectric layer 6. In the step d,sputtering is performed, using a direct current power or a highfrequency power. As the sputtering target, a material selected fromamorphous Ge alloys such as Ge—Cr, Ge—Mo and Ge—W, amorphous Si alloyssuch as Si—Cr, Si—Mo and Si—W, tellurides, and crystalline metals,semi-metal and semiconductor materials such as Ti, Zr, Nb, Ta, Cr, Mo,W, SnTe and PbTe. Sputtering is performed in an Ar gas atmosphere.

Next, the step e is performed to form the reflective layer 8 on thesurface of the light-absorption correction layer 7. The step e isperformed by sputtering. The sputtering is performed in an Ar gasatmosphere, using a direct current power or a high frequency power. Asthe sputtering target, a single sputtering target of a high heatconductivity material such as Au, Al, Ag and Cu or an alloy sputteringtarget such as Al—Cr, Al—Ti, Ag—Pd, Ag—Pb—Cu, Ag—Pd—Ti and Au—Cr can beused.

As described above, all of the steps a to e are sputtering steps.Therefore, the steps a to e may be performed continuously whilesequentially changing sputtering targets in one vacuum chamber of asputtering apparatus as shown in FIG. 11. Alternatively, the steps a toe may be performed with each sputtering target arranged in anindependent vacuum chamber in a sputtering apparatus.

After the reflective layer 8 is formed, the substrate 1 on which thelayers from the first dielectric layer 2 to the reflective layer 8 arelaminated sequentially is removed from the sputtering apparatus. Then,UV curable resin is applied to the surface of the reflective layer 8 by,for example, spin-coating. The dummy substrate 10 is attached to theapplied UV curable resin, followed by irradiation of ultraviolet raysfrom the side of the dummy substrate 10 to cure the resin. This ends theattachment step.

After the attachment step ends, if necessary, an initialization step isperformed. The initialization step is a step in which the recordinglayer 4 in an amorphous state is, for example, irradiated with asemiconductor laser to be heated to a crystallization temperature forcrystallization. The initialization step may be performed before theattachment step. Thus, the steps a to e, the step of forming theadhesive layer and the step of attaching the dummy substrate areperformed sequentially, so that the information recording medium 25 ofEmbodiment 1 can be produced.

Embodiment 2

As Embodiment 2 of the present invention, another example of an opticalinformation recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 2 shows apartial cross-sectional view of the optical information recordingmedium. An information recording medium 26 shown in FIG. 2 has thefollowing structure. A first dielectric layer 2, a recording layer 4, asecond interface layer 5, a second dielectric layer 106, alight-absorption correction layer 7 and a reflective layer 8 are formedon one surface of a substrate 1 in this order. Furthermore, a dummysubstrate 10 is attached to the reflective layer 8 with an adhesivelayer 9. The information recording medium 26 shown in FIG. 2 isdifferent from the conventional information recording medium 31 shown inFIG. 12 in that the first interface layer 103 is not included. Theinformation recording medium 26 is different from the informationrecording medium 25 of Embodiment 1 shown in FIG. 1 in that the seconddielectric layer 106 is laminated on the recording layer 4 via thesecond interface layer 5. In the information recording medium 26, thefirst dielectric layer 2 is an oxide-based material layer as inEmbodiment 1. In addition, in FIG. 2, the same reference numerals asthose used in FIG. 1 indicate the same elements, and are formed with thematerial and the method described with reference to FIG. 1. Therefore,the elements that already have been described with reference to FIG. 1will not be described further. In this embodiment, only one interfacelayer is provided, but this layer is positioned between the seconddielectric layer 106 and the recording layer 4, and therefore thisinterface layer is referred to as “second interface 5” for convenience.

The information recording medium 26 in this embodiment corresponds tothe structure in which the second dielectric layer 106 is formed of(ZnS)₈₀(SiO₂)₂₀ (mol %), which is used in the conventional informationrecording medium. Therefore, the second interface layer 5 is provided toprevent substance movement that might be caused between the seconddielectric layer 106 and the recording layer 4 by repeated recording.

The oxide-based material layer of the present invention can be used forthe second interface layer 5. The second interface layer 5 is a layercontaining at least one element selected from the group GM consisting ofZr and Hf, at least one element selected from the group GL consisting ofLa, Ce, Al, Ga, In, Mg and Y, and oxygen (O), as in the first dielectriclayer 2 and the second dielectric layer 6 of Embodiment 1. Si may beincluded, and a third component may be included in a content of lessthan 10 atom %.

Furthermore, the second interface layer 5 may be formed of a materialcontaining Ge—N, which is conventionally used, or may be formed of amaterial containing ZrO₂—SiO₂—Cr₂O₃ or a material containingHfO₂—SiO₂—Cr₂O₃. In addition, the second interface layer 5 may be formedof a nitride such as Si—N, Al—N, Zr—N, Ti—N or Ta—N or nitroxidescontaining these nitrides, a carbide such as SiC or C (carbon). Thethickness of the interface layer preferably is 1 to 10 nm, morepreferably 2 to 7 nm. When the thickness of the interface layer islarge, the light reflectance and the light absorptance of a multilayeredproduct from the first dielectric layer 2 to the reflective layer 8formed on the surface of the substrate 1 are changed, which affects therecording and erasure performance.

Next, a method for producing the information recording medium 26 ofEmbodiment 2 will be described. The information recording medium 26 isproduced by performing the step (step a) of forming the first dielectriclayer 2 on the surface of the substrate 1 on which guide grooves areformed, the step (step b) of forming the recording layer 4, the step(step f) of forming the second interface layer 5, the step (step g) offorming the second dielectric layer 106, the step (step d) of formingthe light-absorption correction layer 7 and the step (step e) of formingthe reflective layer 8 in this order, further by performing the step offorming the adhesive layer 9 on the surface of the reflective layer 8and the step of attaching the dummy substrate 10. The steps a, b, d ande are performed in the same manner as described in Embodiment 1, and arenot described further in this embodiment. Only the steps that are notperformed in the production of the information recording medium ofEmbodiment 1 will be described below.

The step f is performed after the recording layer 4 is formed, and inthis step, the second interface layer 5 is formed on the surface of therecording layer 4. In the step f, sputtering is performed using a highfrequency power. For the sputtering target used in the step f, thesputtering targets (i) to (iv) described in Embodiment 1 can be used. Inthis case, a sputtering target in which the oxides of essential elements(e.g., an oxide of Zr and an oxide of at least one element selected fromthe group GL1 in the case of (i)) are included in a combined amount of90 mol % or more can be used. For less than 10 mol %, which is theremaining ratio, the third component as described above that is allowedto be contained in the oxide-based material layer may be included. Thesputtering in the step f is performed using a high frequency power in anAr gas atmosphere or in a mixed gas atmosphere with Ar gas and 5% orless of at least either one of oxygen gas and nitrogen gas. Since thesputtering target is a mixture of oxides, reactive sputtering is notnecessary, and an oxide-based material layer can be formed even in anatmosphere of Ar gas alone.

As the sputtering target used in the step f, a sputtering targetcontaining conventional ZrO₂—SiO₂—Cr₂O₃ or a sputtering targetcontaining HfO₂—SiO₂—Cr₂O₃ may be used. Also in this case, sputteringmay be performed using a high frequency power in an Ar gas atmosphere orin a mixed gas atmosphere with Ar gas and 5% or less of at least eitherone of oxygen gas and nitrogen gas. Alternatively, the sputtering may bereactive sputtering that is performed with a sputtering targetcontaining Ge—Cr, Ge, Si, Al, Zr, Ti, or Ta in a mixed gas atmosphere ofAr gas and N₂ gas. This reactive sputtering allows the second interfacelayer 5 containing Ge—Cr—N, Ge—N, Si—N, Al—N, Zr—N, Ti—N, or Ta—N to beformed on the surface of the recording layer 4. In addition, sputteringcan be performed with a sputtering target containing a carbide such asSiC or C (carbon) in Ar gas so that the layer can be formed of a carbidesuch as SiC or C (carbon).

Next, the step g is performed to form the second dielectric layer 106 onthe surface of the second interface layer 5. In the step g, sputteringis performed using a high frequency power and a sputtering target of(ZnS)₈₀(SiO₂)₂₀ (mol %) in an Ar gas atmosphere or a mixed gasatmosphere of Ar gas and O₂ gas. Thus, a layer made of (ZnS)₈₀(SiO₂)₂₀(mol %) can be formed. Thereafter, after the step of attaching the dummysubstrate 10 ends, as described in Embodiment 1, the initialization stepis performed, if necessary, and thus the information recording medium 26is obtained.

Embodiment 3

As Embodiment 3 of the present invention, another example of an opticalinformation recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 3 shows apartial cross-sectional view of the optical information recordingmedium.

An information recording medium 27 shown in FIG. 3 has the followingstructure. A first dielectric layer 102, a first interface layer 3, arecording layer 4, a second dielectric layer 6, a light-absorptioncorrection layer 7 and a reflective layer 8 are formed on one surface ofa substrate 1 in this order. Furthermore, a dummy substrate 10 isattached to the reflective layer 8 with an adhesive layer 9. Theinformation recording medium 27 shown in FIG. 3 is different from theconventional information recording medium 31 shown in FIG. 12 in thatthe second interface layer 105 is not included. The informationrecording medium 27 is different from the information recording medium25 of Embodiment 1 shown in FIG. 1 in that the first dielectric layer102 and the first interface layer 3 are laminated in this order betweenthe substrate 1 and the recording layer 4. In the information recordingmedium 27, the second dielectric layer 6 is an oxide-based materiallayer as in Embodiment 1. In addition, in FIG. 3, the same referencenumerals as those used in FIG. 1 indicate the same elements, and areformed with the material and the method described with reference toFIG. 1. Therefore, the elements that already have been described withreference to FIG. 1 will not be described further.

The information recording medium 27 in this embodiment corresponds tothe structure in which the first dielectric layer 102 is formed of(ZnS)₈₀(SiO₂)₂₀ (mol %), which is used in the conventional informationrecording medium. Therefore, the first interface layer 3 is provided toprevent substance movement that might be caused between the firstdielectric layer 102 and the recording layer 4 by repeated recording.The preferable material and thickness of the first interface layer 3 arethe same as those of the second interface layer 5 of the informationrecording medium 26 of Embodiment 2 described with reference to FIG. 2.Therefore, they will not be described in detail.

Next, a method for producing the information recording medium 27 ofEmbodiment 3 will be described. The information recording medium 27 isproduced by performing the step (step h) of forming the first dielectriclayer 102 on the surface on which guide grooves are formed of thesubstrate 1, the step (step i) of forming the first interface layer 3,the step (step b) of forming the recording layer 4, the step (step c) offorming the second dielectric layer 6, the step (step d) of forming thelight-absorption correction layer 7 and the step (step e) of forming thereflective layer 8 in this order, further by performing the step offorming the adhesive layer 9 on the surface of the reflective layer 8and the step of attaching the dummy substrate 10. The steps b, c, d ande are performed in the same manner as described in Embodiment 1, and arenot described further in this embodiment. Only the steps that are notperformed in production of the information recording medium ofEmbodiment 1 will be described below.

The step h is a step of forming the first dielectric layer 102 on thesurface of the substrate 1. A specific method is the same as the step gdescribed in connection with the production method of Embodiment 2. Thestep i is a step of forming the first interface layer 3 on the surfaceof the first dielectric layer 102. A specific method is the same as thestep f described in connection with the production method of Embodiment2. Thereafter, after the step of attaching the dummy substrate 10 ends,as described in Embodiment 1, the initialization step is performed, ifnecessary, and thus the information recording medium 27 is obtained.

Embodiment 4

As Embodiment 4 of the present invention, another example of an opticalinformation recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 4 shows apartial cross-sectional view of the optical information recordingmedium.

An information recording medium 28 shown in FIG. 4 has the followingstructure. A first dielectric layer 102, a first interface layer 3, arecording layer 4, a second interface layer 5, a second dielectric layer106, a light-absorption correction layer 7 and a reflective layer 8 areformed on one surface of a substrate 1 in this order. Furthermore, adummy substrate 10 is attached to the reflective layer 8 with anadhesive layer 9. In the information recording medium 28 shown in FIG.4, the first and the second interface layers 3 and 5 are oxide-basedmaterial layers. In FIG. 4, the same reference numerals as those used inFIGS. 1 to 3 indicate the same elements, and are formed with thematerial and the method described with reference to FIGS. 1 to 3.Therefore, the elements that already have been described with referenceto FIGS. 1 to 3 will not be described further.

The information recording medium of this embodiment corresponds to thestructure in which the first and the second dielectric layers 102 and106 are formed of (ZnS)₈₀(SiO₂)₂₀ (mol %), which is used in theconventional information recording medium, and the first and the secondinterface layers 3 and 5 are formed of oxide-based material layers. Thepreferable materials and thicknesses of the first and the secondinterface layers 3 and 5 are the same as those of the first and thesecond dielectric layers 2 and 6 of Embodiment 1. Therefore, they willnot be described in detail. The thickness of the first and the secondinterface layers 3 and 5 preferably is 1 to 10 nm, more preferably isabout 2 to 7 nm not to affect the recording and erasure properties. Theinterface layer, which is an oxide-based material layer, has thefollowing advantages, compared with a conventional interface layer madeof a nitride containing Ge: the material cost of is inexpensive; theextinction coefficient is small (transparency is high); and the meltingpoint is high so that the interface layer is thermally stable.

The first and the second dielectric layers 102 and 106 may be formed ofthe same material or different materials.

Next, a method for producing the information recording medium 28 ofEmbodiment 4 will be described. The information recording medium 28 isproduced by performing the step (step h) of forming the first dielectriclayer 102 on the surface on which guide grooves are formed of thesubstrate 1, the step (step i) of forming the first interface layer 3,the step (step b) of forming the recording layer 4, the step (step f) offorming the second interface layer 5, the step (step g) of forming thesecond dielectric layer 106, the step (step d) of forming thelight-absorption correction layer 7 and the step (step e) of forming thereflective layer 8 in this order, further by performing the step offorming the adhesive layer 9 on the surface of the reflective layer 8and the step of attaching the dummy substrate 10. The step h isperformed in the same manner as described in Embodiment 3, the steps b,d and e are performed in the same manner as described in Embodiment 1,and the step g is performed in the same manner as described inEmbodiment 2, and therefore are not described further in thisembodiment.

The second dielectric layer 106 may be formed using a sputtering targetcontaining the same material as the first dielectric layer 102, or asputtering target containing a different material. For example, in boththe steps h and g, sputtering targets containing (ZnS)₈₀(SiO₂)₂₀ (mol %)may be used, or in the step h, a sputtering target containing(ZnS)₈₀(SiO₂)₂₀ (mol %) may be used, and in the step g, a sputteringtarget containing (ZrO₂)₃₀(SiO₂)₃₀(Cr₂O₃)₂₀(LaF₃)₂₀ (mol %) may be used.Sputtering in these steps can be performed using a high frequency powerand in an Ar gas atmosphere or a mixed gas atmosphere of Ar gas and atleast either one of oxygen gas and nitrogen gas.

The step i is a step of forming the first interface layer 3 on thesurface of the first dielectric layer 102. The step i is performed inthe same manner as in Embodiment 3. For the sputtering target used inthe step i, the sputtering targets (i) to (iv) described in Embodiment 1can be used. In this case, a sputtering target in which the oxides ofessential elements (e.g., an oxide of Zr and an oxide of at least oneelement selected from the group GL1 in the case of (i)) are included ina combined amount of 90 mol % or more can be used. For less than 10 mol%, which is the remaining ratio, the third component as described abovethat is allowed to be contained in the oxide-based material layer may beincluded. In this case, sputtering is performed using a high frequencypower in an Ar gas atmosphere or in a mixed gas atmosphere with Ar gasand 5% or less of at least either one of oxygen gas and nitrogen gas.Since the sputtering target is a mixture of oxides, reactive sputteringis not necessary, and an oxide-based material layer can be formed evenin an atmosphere of Ar gas alone.

In the information recording medium in Embodiment 4, the oxide-basedmaterial layer of the present invention is used for both the first andthe second interface layers 3 and 5, for example. However, theoxide-based material layer of the present invention can be used only forthe first interface layer 3, and another material can be used for thesecond interface layer. Alternatively, the oxide-based material layer ofthe present invention can be used only for the second interface layer 5,and another material can be used for the first interface layer. When theoxide-based material layer of the present invention is used for both thefirst and the second interface layers 3 and 5, different compositions inthe range shown in FIG. 7 can be used for the interface layers.

The step f is a step of forming the second interface layer 5 on thesurface of the recording layer 4. The step f is performed in the samemanner as in Embodiment 2. The sputtering target used in the step f isthe same sputtering target as used in the step i.

After the step of attaching the dummy substrate 10 ends, as described inEmbodiment 1, the initialization step is performed, if necessary, andthus the information recording medium 28 is obtained.

Embodiment 5

As Embodiment 5 of the present invention, another example of an opticalinformation recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 5 shows apartial cross-sectional view of the optical information recordingmedium.

An information recording medium 29 shown in FIG. 5 has the followingstructure. A reflective layer 8, a second dielectric layer 6, arecording layer 4, and a first dielectric layer 2 are formed on onesurface of a substrate 101 in this order. Furthermore, a dummy substrate110 is attached to the first dielectric layer 2 with an adhesive layer9. This information recording medium 29 is different from theconventional information recording medium 31 shown in FIG. 12 in thatthe first interface layer 103 and the second interface layer 105 are notincluded and that the substrates 101 and 110 are used. The informationrecording medium having this structure is different from the informationrecording medium 25 shown in FIG. 1 in that the light-absorptioncorrection layer 7 is not included.

The information recording medium 29 in this embodiment is irradiatedwith laser light 12 from the dummy substrate 110 side, and thusinformation is recorded and reproduced. In order to increase therecording density of the information recording medium, laser light witha short wavelength is used, and it is necessary to form a smallrecording mark in the recording layer by focusing a laser beam on asmaller spot. In order to focusing a laser beam on a smaller spot, it isnecessary to increase the numerical aperture NA of an objective lens.However, when NA is increased, the focus position becomes shorter.Therefore, it is necessary to reduce the thickness of the substrate onwhich laser light is incident. In the information recording medium 29shown in FIG. 5, the dummy substrate 110 on which laser light isincident does not have to serve as a support when the recording layerand other layers are formed, and therefore the thickness thereof can bereduced. Therefore, this structure can provide a large capacityinformation recording medium 29 that allows for higher densityrecording. More specifically, this structure can provide an informationrecording medium with a capacity of 25 GB for which laser light in abluish-purple range of a wavelength of about 405 nm is used forrecording and reproduction.

In this information recording medium as well, the first and the seconddielectric layers 2 and 6 are oxide-based material layers as inEmbodiment 1. The oxide-based material layer can be used as a dielectriclayer, regardless of the order of forming the reflective layer and otherlayers and the recording capacity. The materials contained in theoxide-based material layer are such as described in Embodiment 1, andtherefore will not be described further.

As described above, the information recording medium 29 is suitable forrecording and reproduction with laser light with a short wavelength.Therefore, the thickness of the first and the second dielectric layers 2and 6 are obtained based on a preferable optical path length, forexample, when λ=405 nm. In order to improve the signal quality byincreasing the reproduction signal amplitude of the recording mark ofthe information recording medium 29, for example, the optical pathlength nd of the first dielectric layer 2 and second dielectric layer 6was determined strictly by calculations based on the matrix method so asto satisfy 20%≦Rc and Ra≦5%. As a result, it was discovered that when anoxide-based material layer having a refractive index of 1.8 to 2.5 isused for the first and the second dielectric layers 2 and 6, thethickness of the first dielectric layer 2 preferably is 30 nm to 100 nm,and more preferably 50 nm to 80 nm. It also was discovered that thethickness of the second dielectric layer 6 preferably is 3 nm to 50 nm,and more preferably 10 nm to 30 nm.

The substrate 101 is a transparent disk-like plate, like the substrate 1of Embodiment 1. Guide grooves for guiding laser light may be formed onthe surface of the substrate 101 on which the reflective layer or thelike is to be formed. When guide grooves are formed, as described inEmbodiment 1, the surface 23 that is nearer to the laser light 12 isreferred to as “groove surface” for convenience, and the surface 24 thatis farther from the laser light 12 is referred to as “land surface” forconvenience. The step between the groove surface 23 and the land surface24 of the substrate 101 preferably is 10 nm to 30 nm, and morepreferably 15 nm to 25 nm. Furthermore, it is preferable that thesurface on which the layers are not formed is smooth. As the material ofthe substrate 101, the same materials as those for the substrate 1 ofEmbodiment 1 can be used. The thickness of the substrate 101 preferablyis about 1.0 to 1.2 mm. A preferable thickness of the substrate 101 islarger than that of the substrate 1 of Embodiment 1. This is because thethickness of the dummy substrate 110 is smaller, as described later, andtherefore it is necessary to ensure the strength of the informationrecording medium with the substrate 101.

The dummy substrate 110 is a transparent disk-like plate, like thesubstrate 101. As described above, according to the structure shown inFIG. 4, it is possible to record information with laser light with ashort wavelength by reducing the thickness of the dummy substrate 110.Therefore, the thickness of the dummy substrate 110 preferably is about40 μm to 110 μm. It is more preferable that the combined thickness ofthe adhesive layer 9 and the dummy substrate 110 is 50 μm to 120 μm.

Since the dummy substrate 110 is thin, it is preferable that the dummysubstrate is formed of resin such as polycarbonate, amorphous polyolefinor PMMA, and in particular, polycarbonate is preferable. Since the dummysubstrate 110 is positioned on the laser light 12 incident side, it isoptically preferable that the dummy substrate 110 has a smallbirefringence range and is transparent in a short wavelength.

It is preferable that the adhesive layer 9 is formed of a transparent UVcurable resin. The thickness of the adhesive layer 9 preferably is about5 to 15 μm. If the adhesive layer 9 has the function of the dummysubstrate 110 and can be formed in a thickness of 50 μm to 120 μm, thedummy substrate 110 can be eliminated.

The elements having the same numeral references as in Embodiment 1 aresuch as already have been described in Embodiment 1, and will not bedescribed in this embodiment.

In a variation example of the information recording medium of thisembodiment, for example, only the first dielectric layer is formed of anoxide-based material layer, the second dielectric layer is formed of(ZnS)₈₀(SiO₂)₂₀ (mol %), and the second interface layer is formedbetween the second dielectric layer and the recording layer. In anothervariation example of the information recording medium of thisembodiment, for example, only the second dielectric layer is formed ofan oxide-based material layer, the first dielectric layer is formed of(ZnS)₈₀(SiO₂)₂₀ (mol %), and the first interface layer is formed betweenthe first dielectric layer and the recording layer.

Next, a method for producing the information recording medium 29 ofEmbodiment 5 will be described. The information recording medium 29 isproduced by performing the step (step e) of arranging the substrate 101(e.g., thickness: 1.1 mm) in which guide grooves (groove surface 23 andland surface 24) are formed in a film-formation apparatus and formingthe reflective layer 8 on the surface on which the guide grooves areformed of the substrate 101, the step (step c) of forming the seconddielectric layer 6, the step (step b) of forming the recording layer 4,and the step (step a) of forming the first dielectric layer 2 in thisorder, further by performing the step of forming the adhesive layer 9 onthe surface of the first dielectric layer 2 and the step of attachingthe dummy substrate 110.

First, the step e is performed so that the reflective layer 8 is formedon the surface on which the guide grooves are formed of the substrate101. The specific method for performing the step e is such as describedin Embodiment 1. Next, the steps c, b and a are performed in this order.The specific methods for performing the steps c, b and a are such asdescribed in Embodiment 1. In production of the information recordingmedium of this embodiment as well as the information recording medium ofEmbodiment 1, the sputtering target used in the step c may be differentfrom the sputtering target used in the step a. In production of theinformation recording medium of this embodiment, the order of performingthe steps is different from that in the method for producing theinformation recording medium of Embodiment 1.

After forming the first dielectric layer 2, the substrate 101 on whichthe layers from the reflective layer 8 to the first dielectric layer 2are laminated sequentially is removed from the sputtering apparatus.Then, UV curable resin is applied on the first dielectric layer 2 by,for example, spin-coating. The dummy substrate 110 is attached tightlyto the applied UV curable resin, and irradiation of ultraviolet rays isperformed from the dummy substrate 110 side to cure the resin, and thusthe attachment step is completed. The adhesive layer 9 is formed to athickness of 50 μm to 120 μm, and is irradiated with ultraviolet rays,which may eliminate the step of attaching the dummy substrate 110. Thisis because if the adhesive layer 9 is formed in a thickness of 50 μm to120 μm, the adhesive layer 9 serves as the dummy substrate 110.

After the attachment step ends, as described in Embodiment 1, theinitialization step is performed, if necessary. The method for theinitialization is as described in Embodiment 1.

Embodiment 6

As Embodiment 6 of the present invention, yet another example of anoptical information recording medium on/from which information isrecorded/reproduced using laser light will be described. FIG. 6 shows apartial cross-sectional view of the optical information recordingmedium.

An information recording medium 30 shown in FIG. 6 has the followingstructure. A second information layer 22, an intermediate layer 16, anda first information layer 21 are formed on one surface of a substrate101 in this order. Furthermore, a dummy substrate 110 is attached to thefirst information layer 21 via an adhesive layer 9. More specifically,the second information layer 22 is obtained by forming a secondreflective layer 20, a fifth dielectric layer 19, a second recordinglayer 18, and a fourth dielectric layer 17 on one surface of thesubstrate 101 in this order. The intermediate layer 16 is formed on asurface of the fourth dielectric layer 17. The first information layer21 is obtained by forming a third dielectric layer 15, a firstreflective layer 14, a second dielectric layer 6, a first recordinglayer 13, and a first dielectric layer 2 on the surface of theintermediate layer 16 in this order. Also in this embodiment, the laserlight 12 is incident from the side of the dummy substrate 110.Furthermore, in the information recording medium of this embodiment,information can be recorded in each of the two recording layers.Therefore, this structure can provide an information recording mediumthat has a capacity twice that of Embodiment 5 above. More specifically,this structure can provide an information recording medium with acapacity of 50 GB for which laser light in a bluish-purple range of awavelength in the vicinity of 405 nm is used for recording andreproduction.

Information is recorded on/reproduced from the first information layer21 by laser light 12 that has passed through the dummy substrate 110.Information is recorded on/reproduced from the second information layer22 by laser light 12 that has passed through the dummy substrate 110,the first information layer 21 and the intermediate layer 16.

In the information recording medium 30 shown in FIG. 6, oxide-basedmaterial layers can be used for the fifth dielectric layer 19, thefourth dielectric layer 17, the second dielectric layer 6, and the firstdielectric layer 2. If the oxide-based material layer is used, aninterface layer is not necessary between the first recording layer 13and the first dielectric layer 2, between the first recording layer 13and the second dielectric layer 6, between the second recording layer 18and the fourth dielectric layer 17, between the second recording layer18 and the fifth dielectric layer 19. The specific materials of theoxide-based material layers are such as described in Embodiment 1 andtherefore are not described further.

The fifth dielectric layer 19 and the second dielectric layer 6 serve asthermal insulating layers between the reflective layers and therecording layers. Therefore, it is preferable to form the fifth and thesecond dielectric layers 19 and 6 by selecting materials such that thethermal conductivity of the layers becomes low and the effect of coolingthe second and the first recording layers 18 and 13 rapidly isincreased. More specifically, it is preferable that these layers containa material expressed by, for example, Zr₁₅Si₁₁Ga₁₁O₆₃ (atom %) (oxiderepresentation (ZrO₂)₄O(SiO₂)₃₀(Ga₂O₃)₃₀ (mol %)). Furthermore, thethickness of the fifth and the second dielectric layers 19 and 6preferably is 3 nm to 50 nm, more preferably 10 nm to 30 nm.

In the second information layer 22 and the first information layer 21,the laser light 12 is incident to the fourth dielectric layer 17 and thefirst dielectric layer 2 before reaching the second recording layer 18and the first recording layer 13. Therefore, it is preferable that thefourth dielectric layer 17 and the first dielectric layer 2 are formedof transparent materials having low thermal conductivity. Morespecifically, it is preferable that these layers contain materialsexpressed by, for example, Zr₆Si₆Ga₂₅O₆₃ (atom %) (oxide representation(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %)). The thickness of the fourth and thefirst dielectric layers 17 and 2 preferably is 30 nm to 80 nm.

Thus, also in the information recording medium having one-surface twolayer structure as shown in FIG. 6, the dielectric layers can be indirect contact with the recording layers without an interface layerinterposed therebetween by using oxide-based material layers for thedielectric layers positioned on both sides of the recording layer.Therefore, according to the present invention, regarding the informationrecording medium having a one-surface two layer structure, the number ofthe layers constituting the entire medium can be reduced. Furthermore,the refractive index and/or the recording sensitivity of the medium areadjusted and optimized depending on the type of the informationrecording medium by using a plurality of oxides to be contained in thematerial constituting the dielectric layer and/or selecting the type ofoxide as appropriate.

The third dielectric layer 15 is positioned between the intermediatelayer 16 and the first reflective layer 14. It is preferable that thethird dielectric layer 15 is transparent and has a high refractive indexso as to have a function of increasing the light transmission of thefirst information layer 21. It is preferable that the third dielectriclayer 15 is formed of a material having a high thermal conductivity soas to have a function of allowing heat of the first recording layer 13to be diffused rapidly. The material that satisfies these conditions isTiO₂. TiO₂ is included in a content of 90 mol % or more. When a TiO₂based material is used, a layer having a large refractive index of about2.7 can be formed. It is preferable that the thickness of the thirddielectric layer 15 is 10 nm to 30 nm.

The substrate 101 is the same as the substrate 101 of Embodiment 5.Therefore, the substrate 101 is not described in detail in thisembodiment.

The second reflective layer 20 is the same as the reflective layer 8 ofEmbodiment 1. The second recording layer 18 is the same as the recordinglayer 4 of Embodiment 1. Therefore, the second reflective layer 20 andthe second recording layer 18 are not described in detail in thisembodiment.

The intermediate layer 16 is provided to make the focus position oflaser light in the first information layer 21 significantly differentfrom the focus position in the second information layer 22. Guidegrooves are formed on the first information layer 21 side of theintermediate layer 16, if necessary. The intermediate layer 16 can beformed with UV curable resin. It is preferable that the intermediatelayer 16 is transparent with respect to light with a wavelength λ forrecording and reproduction so that the laser light 12 can reach thesecond information layer 22 efficiently. The thickness of theintermediate layer 16 is required to be equal to the focal depth ΔZ ormore that is determined by the numerical aperture NA of the objectivelens and the wavelength λ of the laser light. ΔZ can be approximatedwith ΔZ=λ/{2 (NA)²}. ΔZ is 0.28 μm at λ=405 nm and NA=0.85. Since therange ±0.3 μm of this value is included in the range of the focal depth,the intermediate layer 16 is required to have a thickness of 0.8 μm ormore It is preferable that the thickness of the intermediate layer 16 iswithin the substrate thickness tolerance that can be allowed withrespect to an objective lens used, in combination with the thickness ofthe dummy substrate 110, so that the distance between the firstrecording layer 13 of the first information layer 21 and the secondrecording layer 18 of the second information layer 22 is within therange in which the objective lens can focus light. Therefore, thethickness of the intermediate layer is preferably 10 μm to 40 μm. Theintermediate layer 16 may be configured with a plurality of laminatedlayers made of resin, if necessary. More specifically, the intermediatelayer 16 may be formed of two layers of a layer for protecting thefourth dielectric layer 17 and a layer provided with guide grooves.

The first reflective layer 14 serves to diffuse heat in the firstrecording layer 13 rapidly. When the second information layer 22 issubjected to recording and reproduction, laser light 12 that has beentransmitted through the first information layer 21 is used, andtherefore, the first information layer 21 has to have high lighttransmission as a whole, and preferably has a light transmission of 45%or more. For this reason, the material and the thickness of the firstreflective layer 14 are limited, compared to the second reflective layer20. In order to reduce light absorption of the first reflective layer14, it is preferable that the first reflective layer 14 has a smallthickness so as to have a small extinction coefficient and a largethermal conductivity. More specifically, the first reflective layer 14is formed of, preferably, an alloy containing Ag in a thickness of 5 nmor more and 15 nm or less.

In order to ensure a high light transmission of the first informationlayer 21, the material and the thickness of the first recording layer 13also are limited, compared to the second recording layer 18. The firstrecording layer 13 is formed such that the average of the transmissionin the crystalline phase and the transmission in the amorphous phase is45% or more. For this reason, the thickness of the first recording layer13 preferably is 7 nm or less. The material of the first recording layer13 is selected such that even with such a small thickness, it is ensuredthat good recording marks are formed by melting and rapid cooling, highquality signals can be reproduced, and recording marks are erased byheating and gradually cooling. More specifically, it is preferable thatthe first recording layer 13 is formed of Ge—Sb—Te such as GeTe—Sb₂Te₃based materials, which are reversible phase change materials, orGe—Sn—Sb—Te in which a part of Ge of a GeTe—Sb₂Te₃ based material issubstituted with Sn. Ge—Bi—Te such as GeTe—Bi₂Te₃ based materials orGe—Sn—Bi—Te in which a part of Ge of Ge—Bi—Te is substituted with Sn canbe used. More specifically, for example, Ge₂₂Sb₂Te₂₅ withGeTe:Sb₂Te₃=22:1 or Ge₁₉Sn₃Sb₂Te₂₅ can be used preferably.

It is preferable that the adhesive layer 9 is formed of a transparent UVcurable resin, similarly to the adhesive layer 9 of Embodiment 5. It ispreferable that the thickness of the adhesive layer 9 is 5 to 15 μm.

The dummy substrate 110 is the same as the dummy substrate 110 ofEmbodiment 5. Therefore the dummy substrate is not described further. Inthis embodiment as well, if the adhesive layer 9 also serves as thedummy substrate 110 and can be formed in a thickness of 50 μm to 120 μm,the dummy substrate 110 can be eliminated.

In the information recording medium of this embodiment, only onedielectric layer of the first dielectric layer 2, the second dielectriclayer 6, the fourth dielectric layer 17 and the fifth dielectric layer19 may be an oxide-based material layer. Alternatively, two or threedielectric layers may be oxide-based material layers. When onedielectric layer is an oxide-based material layer, at least oneinterface layer can be eliminated. When two dielectric layers areoxide-based material layers, at least two interface layers can beeliminated. Therefore, in the information recording medium of thisembodiment, as many as four interface layers can be eliminated. Betweenthe dielectric layer that is not an oxide-based material layer and therecording layer, if necessary, an interface layer for preventingsubstance movement between the recording layer and the dielectric layermay be provided. In this case, the interface layer can be made of anoxide-based material layer having a very small thickness of about 5 nm.

The information recording medium having two information layers havingrecording layers has been described above. The structure of aninformation recording medium having a plurality of recording layers isnot limited thereto, and can have three or more information layers. In avariation example of the embodiment shown in FIG. 6, for example, oneinformation layer of the two information layers has a recording layer inwhich a reversible phase change is caused, and the other informationlayer has a recording layer in which an irreversible phase change iscaused. Alternatively, an information recording medium having threeinformation layers can have the following structure: one of the threeinformation layers is a read-only information layer, another informationlayer has a recording layer in which a reversible phase change iscaused, and the other information layer has a recording layer in whichan irreversible phase change is caused. Thus, the information recordingmedium having two or more information layers can be varied. In anyembodiment, it is possible to eliminate the interface layer between therecording layer and the dielectric layer by using the oxide-basedmaterial layer as the dielectric layer.

In the information recording medium having at least two recordinglayers, the oxide-based material layer may be present as an interfacelayer positioned between the recording layer and the dielectric layer.Such an interface layer can be formed so as to have a very smallthickness of about 5 nm.

Next, a method for producing the information recording medium 30 ofEmbodiment 6 will be described. The information recording medium 30 isproduced by performing the step (step j) of forming the secondreflective layer 20 on the substrate 101, the step (step k) of formingthe fifth dielectric layer 19, the step (step l) of forming the secondrecording layer 18, and the step (step m) of forming the fourthdielectric layer 17 in this order, further by performing the step offorming the intermediate layer 16 on the surface of the fourthdielectric layer 17, the step (step n) of forming the third dielectriclayer 15 on the surface of the intermediate layer 16, the step (step o)of forming the first reflective layer 14, the step (step p) of formingthe second dielectric layer 6, the step (step q) of forming the firstrecording layer 13, and the step (step r) of forming the firstdielectric layer 2 in this order, and further performing the step offorming the adhesive layer 9 on the surface of the first dielectriclayer 2 and the step of attaching the dummy substrate 110.

The steps j to m correspond to the step of forming the secondinformation layer 22. The step j is a step of forming the secondreflective layer 20 on the surface of the substrate 101 on which guidegrooves are formed. The step j is performed in the same manner as thestep e of Embodiment 1. Next, the step k is performed so that the fifthdielectric layer 19 is formed on the surface of the second reflectivelayer 20. The step k is performed in the same manner as the step c ofEmbodiment 1. Then, the step l is performed so that the second recordinglayer 18 is formed on the fifth dielectric layer 19. The step l isperformed in the same manner as the step b of Embodiment 1. Finally, thestep m is performed so that the fourth dielectric layer 17 is formed onthe surface of the second recording layer 18. The step m is performed inthe same manner as the step a of Embodiment 1.

The substrate 101 in which the second information layer 22 is formed bythe steps j to m is removed from the sputtering apparatus, and theintermediate layer 16 is formed. The intermediate layer 16 is formed inthe following manner. First, UV curable resin is applied on the surfaceof fourth dielectric layer 17 by, for example, spin-coating. Next, therough surface of a polycarbonate substrate having concavities andconvexities that is complementary to the guide grooves to be formed inthe intermediate layer is attached tightly to the UV curable resin. Inthis state, the resin is irradiated with ultraviolet rays to be cured,and then the polycarbonate substrate having concavities and convexitiesis detached. Thus, the guide grooves having a complementary shape to theconcavities and convexities are formed on the UV curable resin, and thusthe intermediate layer 16 having the guide grooves shown in FIG. 6 isformed. In another method, the intermediate layer 16 is formed byforming a layer for protecting the fourth dielectric layer 17 with UVcurable resin, and forming a layer having guide grooves thereon. In thiscase, the obtained intermediate layer 16 has a two-layer structure.Alternatively, the intermediate layer may be obtained by laminatingthree or more layers.

The substrate 101 on which the layers up to the intermediate layer 16 isplaced again in the sputtering apparatus and the first information layer21 is formed on the surface of the intermediate layer 16. The steps offorming the first information layer 21 correspond to the steps n to r.

The step n is a step of forming the third dielectric layer 15 on thesurface provided with the guide grooves of the intermediate layer 16. Instep n, sputtering is performed in an Ar gas atmosphere or a mixed gasatmosphere of Ar gas and O₂ gas, using a high frequency power and asputtering target containing a TiO₂ material. If the sputtering targetis TiO₂ with oxygen depleted, sputtering can be performed using a directcurrent power of a pulse generation type.

Then, the step o is performed so that the first reflective layer 14 isformed on the surface of the third dielectric layer 15. In the step o,sputtering is performed in an Ar gas atmosphere, using a direct currentpower and a sputtering target of an alloy containing Ag. Next, the stepp is performed so that the second dielectric layer 6 is formed on thesurface of the first reflective layer 14. The step p is performed in thesame manner as the step k.

Next, the step q is performed so that the first recording layer 13 isformed on the surface of the second dielectric layer 6. In the step q,sputtering is performed in an Ar gas atmosphere or a mixed gasatmosphere of Ar gas and N₂ gas, using a direct current power and asputtering target containing any one material selected from the groupconsisting of Ge—Sb—Te which is a GeTe—Sb₂Te₃ based material, orGe—Sn—Sb—Te in which a part of Ge of a GeTe—Sb₂Te₃ based material issubstituted with Sn, Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, andGe—Sn—Sb—Bi—Te.

Next, the step r is performed so that the first dielectric layer 2 isformed on the surface of the first recording layer 13. The step r isperformed in the same manner as the step m. Thus, the steps n to r areperformed sequentially so that the first information layer 21 is formed.

The substrate 101 in which the layers up to the first information layer21 are formed is removed from the sputtering apparatus. Then, UV curableresin is applied onto the surface of the first dielectric layer 2 by,for example, spin-coating. Next, the dummy substrate 110 is attachedtightly to the applied UV curable resin, the irradiation of ultravioletrays is performed from the side of the dummy substrate 110 to cure theresin and thus the attachment step is completed. Also in the method forproducing the information recording medium of Embodiment 6, the step ofattaching the dummy substrate 110 can be eliminated, in the same manneras the method for producing the information recording medium ofEmbodiment 5.

After the attachment step ends, the initialization step of the secondinformation layer 22 and the first information layer 21 is performed, ifnecessary. With respect to the second information layer 22, theinitialization step may be performed before or after the intermediatelayer is formed, and with respect to the first information layer 21, theinitialization step may be performed before or after the attachment stepof the dummy substrate 110. The method for performing the initializationstep is such as described in Embodiment 1.

An optical information recording medium for recoding and reproducinginformation with laser light has been described as embodiments of theinformation recording medium of the present invention with reference toFIGS. 1 to 6. The optical information recording medium of the presentinvention is not limited thereto. In the optical information recordingmedium of the present invention, an oxide-based material layer can beprovided in contact with the recording layer as one constituent layer,and can take any forms. Furthermore, even if the oxide-based materiallayer is not in contact with the recording layer, it can be usedarbitrarily as a dielectric layer contained in the information recordingmedium. That is to say, the present invention can be applied, regardlessof the order of forming the layers on the substrate, the number of therecording layer, the recording conditions, the recording capacity andthe like. The optical information recording medium of the presentinvention is suitable for recording in various wavelengths. Therefore,the optical information recording medium of the present invention maybe, for example, DVD-RAM or DVD-R for recording and reproduction withlaser light with a wavelength 630 to 680 nm or a large capacity opticaldisk for recording and reproduction with laser light with a wavelength400 to 450 nm.

Embodiment 7

As Embodiment 7 of the present invention, one example of an informationrecording medium on/from which information is recorded/reproduced byapplication of electric energy will be described. FIG. 9 shows a partialcross-sectional view of the information recording medium.

FIG. 9 shows a memory 207 in which a lower electrode 202, a recordingportion 203 and an upper electrode 204 are formed on a surface of asubstrate 201 in this order. The recording portion 203 of the memory 207has a structure including a cylindrical recording layer 205 and adielectric layer 206 enclosing the recording layer 205. Unlike theoptical information recording medium described with reference to FIGS. 1to 6, in the memory 207 of this embodiment, the recording layer 205 andthe dielectric layer 206 are formed on the same plane and are notlaminated. However, both the recording layer 205 and the dielectriclayer 206 constitute a part of a multilayered product including thesubstrate 201, the lower and the upper electrode 202 and 204, andtherefore they can be referred to as “layers”. Thus, the informationrecording medium of the present invention includes the embodiment inwhich the recording layer and the dielectric layer are formed on thesame plane.

More specifically, as the substrate 201, semiconductor substrates suchas Si substrate, polycarbonate substrates, and insulating substratessuch as SiO₂ substrates and Al₂O₃ substrates can be used. The lowerelectrode 202 and the upper electrode 204 are formed of a suitableconductive material. The lower electrode 202 and the upper electrode 204can be formed by, for example, sputtering a metal such as Au, Ag, Pt,Al, Ti, W and Cr and a mixture of these metals.

The recording layer 205 constituting the recording portion 203 is formedof a material that is phase-changed by applying electric energy and thuscan be referred to “phase change portion”. The recording layer 205 isformed of a material that is phase-changed between the crystalline phaseand the amorphous phase by Joule heat generated by applying electricenergy. As the material of the recording layer 205, for example,Ge—Sb—Te, Ge—Sn—Sb—Te, Ge—Bi—Te, Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, andGe—Sn—Sb—Bi—Te based materials can be used. More specifically,GeTe—Sb₂Te₃ or GeTe—Bi₂Te₃ based materials can be used.

The dielectric layer 206 constituting the recording portion 203 servesto prevent current flowing through the recording layer 205 from escapingto the periphery when applying a voltage between the upper electrode 204and the lower electrode 202, and to insulate the recording layer 205electrically and thermally. Therefore, the dielectric layer 206 can bereferred to as “thermal insulating portion”. The dielectric layer 206 isan oxide-based material layer, and more specifically, one of theoxide-based material layers (I) to (IV) described above. The oxide-basedmaterial layer can be used preferably for the following reasons: themelting point is high; the atoms in the material layer are hardlydiffused even if it is heated; and the thermal conductivity is low.

This memory 207 will be described more specifically by way of examplesbelow together with a method for operating this memory.

EXAMPLES

Next, the present invention will be described more specifically by wayof examples.

Test 1

The relationship between the nominal composition (in other words, thecomposition indicated nominally by a sputtering target manufacturer whenbeing supplied) of the sputtering target made of an oxide-based materialused in the production of the information recording medium of thepresent invention and the analyzed composition was confirmed by a test.

In this test, the sputtering target indicated as(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) corresponding to the formula (19) asthe nominal composition was made into powder, and the composition wasanalyzed by the X-ray microanalyzer method. As a result, the analyzedcomposition of the sputtering target was obtained, not as the formula(19) indicated by the ratio of the compounds (mol %), but as the formula(17) indicated by the ratio of the elements (atom %). Table 1 shows theanalyzed results. Furthermore, Table 1 also shows the convertedcomposition that is an element composition obtained based on the nominalcomposition.

TABLE 1 nominal composition of target(ZrO₂)_(x3)(SiO₂)_(z1)(Ga₂O₃)_(100·x3·z1) (mol %) analyzed compositionof target (atom %) (= converted composition (atom %))Zr_(q3)Si_(r1)Ga_(t3)O_(100·q3·r1·t3) (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀Zr_(6.2)Si_(6.5)Ga_(25.0)O_(62.3) (Zr_(6.3)Si_(6.3)Ga_(25.0)O_(62.4))

As shown in Table 1, the analyzed composition was substantially equal tothe converted composition. These results confirmed that the actualcomposition (i.e., analyzed composition) of the sputtering targetindicated by the formula (19) substantially matched the elementcomposition (i.e., converted composition) obtained by calculations, andtherefore the nominal composition was proper.

Test 2

The relationship between the nominal composition of the sputteringtarget made of an oxide-based material used in the production of theinformation recording medium of the present invention and the analyzedcomposition of an oxide-based material layer formed using thissputtering target was confirmed by a test. More specifically, asputtering target (diameter: 100 mm, thickness: 6 mm) indicated by(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) as the nominal compositioncorresponding to the formula (19) was placed in a film-formationapparatus (i.e., sputtering apparatus) and subjected to sputtering in anAr gas atmosphere with a pressure of 0.13 Pa at a power of 400 W, usinga high frequency power. By this sputtering, an oxide-based materiallayer having a thickness of 500 nm was formed on a Si substrate. Thecomposition of this oxide-based material layer also was analyzed by theX-ray microanalyzer method. The analyzed composition of the oxide-basedmaterial layer also was obtained not as the formula (7) indicated by theratio of the compounds (mol %), but as the formula (5) indicated by theratio of the elements (atom %). Table 2 shows the analyzed results.Furthermore, Table 2 also shows the converted composition obtained basedon the nominal composition of the sputtering target.

TABLE 2 nominal composition of target analysis composition ofoxide-based (ZrO₂)_(x3)(SiO₂)_(z1)(Ga₂O₃)_(100·x3·z1) (mol %) materiallayer (atom %) (= converted composition (atom %))Zr_(Q3)Si_(R1)Ga_(T3)O_(100·Q3·R1·T3) (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀Zr_(6.8)Si_(6.8)Ga_(25.1)O_(61.3) (Zr_(6.3)Si_(6.3)Ga_(25.0)O_(62.4))

As shown in Table 2, the analyzed composition of the layer wassubstantially equal to the converted composition of the sputteringtarget. These results confirmed that the actual composition of theoxide-based material layer formed with the sputtering target indicatedby the formula (19) substantially matched the converted compositionobtained by calculations based on the nominal composition of thesputtering target. Consequently, it was confirmed that films havingsubstantially the same composition were obtained, if the sputteringtarget indicated by the formula (19) was used.

It is believed that the same results as those of Tests 1 and 2 can beobtained with other sputtering targets provided with an indication ofthe mixture ratio of an oxide of at least one element selected from Zrand Hf, and a mixture ratio of at least one element selected from thegroup consisting of La, Ce, Al, Ga, In, Mg and Y. Therefore, thecomposition of the sputtering targets is shown by the nominalcomposition (mol %) in the following examples. Furthermore, it wasdetermined that the nominal composition of a sputtering target can beregarded as being equal to the composition (mol %) of the oxide-basedmaterial layer formed by sputtering using the sputtering target.Therefore, the composition of the dielectric layer is indicated by theindication of the composition of the sputtering target in the followingexamples. In some of the following examples, the compositions of thesputtering target and the oxide-based material layer are indicated onlyby the ratio (mol %) of the compounds. Those skilled in the art wouldcalculate easily the element composition (atom %) of the sputteringtarget and the oxide-based material layer, based on the ratio (mol %) ofthe compounds.

Example 1

In Example 1, in order to investigate the transparency of theoxide-based material layer, the complex refractive indexes (n-ki, n:refractive index, k: extinction coefficient) in a red region (wavelength660 nm) and a bluish-purple region (wavelength 405 nm) were measured. Inthe procedure, a sample was prepared in which a thin film containing anoxide-based material is formed on a quartz glass substrate, and thecomplex refractive index of the thin film was measured by ellipsometry.The prepared oxide-based materials are mixtures of an oxide of at leastone element selected from the group consisting of Zr and Hf and an oxideof at least one element selected from the group consisting of La, Ce,Al, Ga, In, Mg and Y, and mixtures further mixed with Si. The preparedoxide-based materials are 16 types as bellow: (ZrO₂)₂₀(La₂O₃)₈₀,(ZrO₂)₂₀(CeO₂)₅₀, (ZrO₂)₂₀(Al₂O₃)₈₀, (ZrO₂)₂₀(Ga₂O₃)₈₀,(ZrO₂)₂₀(In₂O₃)₈₀, (ZrO₂)₂₀(MgO)₈₀, and (ZrO₂)₂₀(Y₂O₃)₈₀, which aremixtures of the two oxides; (ZrO₂)₂₀(Cr₂O₃)₅₀ as a comparative example;and (ZrO₂)₂₅(SiO₂)₂₅(La₂O₃)₅₀, (ZrO₂)₂₅(SiO₂)₂₅(CeO₂)₅₀,(ZrO₂)₂₅(SiO₂)₂₅(Al₂O₃)₅₀, (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀,(ZrO₂)₂₅(SiO₂)₂₅(In₂O₃)₅₀, (ZrO₂)₂₅(SiO₂)₂₅(MgO)₅₀, and(ZrO₂)₂₅(SiO₂)₂₅(Y₂O₃)₅₀, which are mixtures further mixed with SiO₂;and (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ as a comparative example.

A sputtering target (diameter: 100 mm, thickness: 6 mm) containing anoxide-based material was provided in a vacuum chamber of a sputteringapparatus, and as a substrate, a quartz glass (length: 18 mm, width: 12mm, and thickness: 1.2 mm) was opposed to the sputtering target.Sputtering was performed in an Ar gas atmosphere with a pressure of 0.13Pa at a power of 400 W, using a high frequency power. The 16 types ofthe materials were subjected to sputtering under the same conditions toform an oxide-based material layer in a thickness of 20 nm each on thequartz glass substrate. The quartz glass sample piece was removed fromthe vacuum chamber, and the complex refractive indexes (n-ki, n:refractive index, k: extinction coefficient) in a red region (wavelengthλ=660 nm) and a blue violet region (wavelength λ=405 nm) were measuredby ellipsometry. Table 3 shows the measurement results.

TABLE 3 complex refractive index Sample oxide-based material layer(n-ki) No. (mol %) λ = 660 nm λ = 405 nm 1-1 (ZrO₂)₂₀(La₂O₃)₈₀ 2.1-0.00i2.1-0.00i 1-2 (ZrO₂)₂₀(CeO₂)₈₀ 2.1-0.00i 2.1-0.00i 1-3 (ZrO₂)₂₀(Al₂O₃)₈₀2.1-0.00i 2.0-0.00i 1-4 (ZrO₂)₂₀(Ga₂O₃)₈₀ 2.0-0.00i 2.0-0.00i 1-5(ZrO₂)₂₀(In₂O₃)₈₀ 2.1-0.00i 2.1-0.00i 1-6 (ZrO₂)₂₀(MgO)₈₀ 2.3-0.00i2.2-0.00i 1-7 (ZrO₂)₂₀(Y₂O₃)₈₀ 2.1-0.00i 2.1-0.00i Com. Ex. 1-1(ZrO₂)₂₀(Cr₂O₃)₈₀ 2.5-0.06i 2.7-0.20i 1-8 (ZrO₂)₂₅(SiO₂)₂₅(La₂O₃)₅₀2.0-0.00i 2.0-0.00i 1-9 (ZrO₂)₂₅(SiO₂)₂₅(CeO₂)₅₀ 2.0-0.00i 2.0-0.00i1-10 (ZrO₂)₂₅(SiO₂)₂₅(Al₂O₃)₅₀ 2.0-0.00i 1.9-0.00i 1-11(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ 1.9-0.00i 2.0-0.00i 1-12(ZrO₂)₂₅(SiO₂)₂₅(In₂O₃)₅₀ 2.0-0.00i 2.0-0.00i 1-13(ZrO₂)₂₅(SiO₂)₂₅(MgO)₅₀ 2.1-0.00i 2.0-0.00i 1-14(ZrO₂)₂₅(SiO₂)₂₅(Y₂O₃)₅₀ 2.0-0.00i 2.0-0.00i Com. Ex. 1-2(ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ 2.2-0.04i 2.3-0.13i

As shown in Table 3, in all of the materials of samples 1-1 to 1-14except (ZrO₂)₂₀(Cr₂O₃)₈₀ and (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀, k=0.00 at λ=660nm and λ=405 nm. That is to say, it was confirmed that they weretransparent. In the materials containing Cr₂O₃, 0<k was obtained and itwas confirmed that the transparency was low.

The complex refractive index can be obtained by calculations bymeasuring the reflectance and the transmission of the sample pieces witha spectroscope. This method also can provide precise complex refractiveindexes.

Example 2

When the same oxide-based material layer as in Example 1 except thatHfO₂ is contained instead of ZrO₂ was used to investigate itstransparency, the same results as in Example 1 were obtained. Morespecifically, with (HfO₂)_(X1)(E1)_(100-X1) (mol %) and(HfO₂)_(X1)(SiO₂)_(z)(E)_(100-X1-Z) (mol %), k=0.00 was obtained atλ=660 nm and λ=405 nm. That is to say, it was confirmed that they weretransparent.

Example 3

In Example 3, the information recording medium 25 was produced using theoxide-based material layer. More specifically, the oxide-based materiallayer made of a material of (ZrO₂)₅₀(E)₅₀ (mol %) was used for the firstdielectric layer 2 and the second dielectric layer 6. E shown hereinindicates either one of La₂O₃, CeO₂, Al₂O₃, Ga₂O₃, In₂O₃, MgO, and Y₂O₃.Using such oxide-based material layers, seven types of medium samples(sample 3-1 to 3-7) were produced, and the adhesion, the repeatedrewriting performance, and the recording sensitivity were evaluated.

Hereinafter, the method for producing the information recording medium25 will be described. In the following description, the same referencenumerals as those of the components shown in FIG. 1 are used as thereference numerals of the components for easy understanding. In theinformation recording media of the examples below as well, the samereference numerals as those of the components of the correspondinginformation recording medium are used as the reference numerals of thecomponents.

First, a round polycarbonate substrate having a diameter of 120 mm and athickness of 0.6 mm that are previously provided with guide grooveshaving a depth of 56 nm and a track pitch (distance between the centersof the groove surface and the land surface in a plane parallel to themain plane of the substrate) of 0.615 μm on one surface was prepared asa substrate 1. A first dielectric layer 2 having a thickness of 150 nm,a recording layer 4 having a thickness of 9 nm, a second dielectriclayer 6 having a thickness of 50 nm, a light-absorption correction layer7 having a thickness of 40 nm, and a reflective layer 8 having athickness of 80 nm were formed on the substrate 1 in this order bysputtering in the following method.

In the step of forming the first dielectric layer 2 and the seconddielectric layer 6, a sputtering target (diameter: 100 mm, thickness: 6mm) made of the (ZrO₂)₅₀(E)₅₀ (mol %) material as described above wasprovided in a film-formation apparatus, and sputtering was performed inan Ar gas atmosphere with a pressure of 0.13 Pa at a high frequencypower of 400 W.

In the step of forming the recording layer 4, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of the Ge—Sn—Sb—Te material inwhich a part of Ge of a GeTe—Sb₂Te₃ pseudo-binary composition issubstituted with Sn was provided in a film-formation apparatus, and DCsputtering was performed. The power was 100 W. During sputtering, amixed gas of Ar gas (97%) and N₂ gas (3%) was introduced. The pressureduring sputtering was 0.13 Pa. The composition of the recording layerwas Ge₂₇Sn₈Sb₁₂Te₅₃ (atom %).

In the step of forming the light-absorption correction layer 7, asputtering target (diameter: 100 mm, thickness: 6 mm) made of a materialhaving a composition of Ge₈₀Cr₂₀ (atom %) was provided in afilm-formation apparatus, and DC sputtering was performed in an Ar gasatmosphere with a pressure of about 0.4 Pa at a power of 300 W.

In the step of forming the reflective layer 8, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of a Ag—Pd—Cu alloy wasprovided in a film-formation apparatus, and DC sputtering was performedin an Ar gas atmosphere with a pressure of about 0.4 Pa at a power of200 W.

After the reflective layer 8 was formed, UV curable resin was appliedonto the reflective layer 8. A dummy substrate 10 made of polycarbonatehaving a diameter of 120 mm and a thickness of 0.6 mm was attachedtightly onto the applied UV curable resin. Then, irradiation ofultraviolet rays was performed from the side of the dummy substrate 10to cure the resin. Thus, the adhesive layer 9 made of the cured resinwas formed in a thickness of 30 μm, and the dummy substrate 10 wasattached onto the reflective layer 8 via the adhesive layer 9 at thesame time.

After the dummy substrate 10 was attached, the initialization step wasperformed using a semiconductor laser having a wavelength of 810 nm. Inthe initialization step, substantially the entire recording layer 4positioned in a circular region in a 22 to 60 mm range of the radius ofthe information recording medium 25 was crystallized. The production ofthe information recording medium 25 was finished with the end of theinitialization.

As a comparative example, a medium sample (comparative example 3-1) inwhich the first dielectric layer 2 and the second dielectric layer 6were formed of (ZrO₂)₅₀(Cr₂O₃)₅₀ (mol %) was produced. In the productionprocess, a sputtering target (diameter: 100 mm, thickness: 6 mm) made ofthe (ZrO₂)₅₀(Cr₂O₃)₅₀ (mol %) material was provided in a film-formationapparatus, and sputtering was performed in an Ar gas atmosphere with apressure of 0.13 Pa at a high frequency power of 400 W. The materialsand the steps of the other layers were the same as above.

Next, a method for evaluating the information recording media will bedescribed. The adhesion of the dielectric layer in the informationrecording medium 25 was evaluated based on the presence or the absenceof the peeling under high temperature and high humidity conductions.More specifically, the information recording medium 25 after theinitialization step was left in a high temperature and high humiditybath at a temperature of 90° C. and a relative humidity of 80% for 100hours, and then it was examined visually with an optical microscope asto whether peeling occurs between the recording layer and the dielectriclayer in contact with this recording layer, more specifically, at atleast one of the interface between the recording layer 4 and the firstdielectric layer 2 and the interface between the recording layer 4 andthe second dielectric layer 6. Samples without peeling were evaluated tohave good adhesion, and samples with peeling were evaluated to have pooradhesion.

The repeated rewriting performance of the information recording medium25 was evaluated based on the number of repetitions. The number ofrepetitions was determined in the following conditions.

An information recording system having a general structure including aspindle motor for rotating the information recording medium 25, anoptical head provided with a semiconductor laser emitting laser light12, and an objective lens for focusing the laser light 12 on therecording layer 4 of the information recording medium 25 was used torecord information in the information recording medium 25. Forevaluation of the information recording medium 25, recordingcorresponding to a capacity of 4.7 GB was performed using asemiconductor laser with a wavelength of 660 nm and an objective lenshaving a numerical aperture of 0.6. The linear velocity at which theinformation recording medium 25 was rotated was 8.2 m/sec. A timeinterval analyzer was used to measure the jitter value to obtain theaverage jitter value as described below.

First, a peak power (Pp) and a bias power (Pb) were set in the followingprocedure in order to determine the measurement conditions fordetermining the number of repetitions. Using the above-describe system,the information recording medium 25 was irradiated with the laser light12 while changing the power between a peak power (mW) in a high powerlevel and a bias power (mW) in a low power level, and a random signalhaving a mark length of 0.42 μm (3T) to 1.96 μm (14T) was recoded (bygroove recording) ten times on the same groove surface of the recordinglayer 4. Then, the jitter value between the front ends and the jittervalue between the rear ends were measured and then the average of thesejitter values was obtained. The bias power was fixed to a predeterminedvalue, and the average jitter value was measured with respect todifferent recording conditions in which the peak power was changedvariously. The peak power was gradually increased, and the power 1.3times larger than the peak power when the average jitter value of therandom signal reached 13% was taken as Pp1 for example. Then, the peakpower was fixed to Pp1 and the average jitter value was measured withrespect to different recording conditions in which the bias power waschanged variously. The average of the upper limit and the lower limit ofthe bias power when the average jitter value of the random signal became13% or less was set to Pb. Then, the bias power was fixed to Pb, and theaverage jitter value was measured with respect to each recordingcondition in which the peak power was changed variously. The peak powerwas gradually increased, and the power 1.3 times larger than the powerwhen the average jitter value of the random signal reached 13% was setto Pp. When recording was performed under the conditions of the thus setPp and Pb, for example, an average jitter value of 8 to 9% was obtainedwhen recording was repeated 10 times. Taking the upper limit of thelaser power of the system into consideration, it is preferable tosatisfy Pp≦14 mW and Pb≦8 mW. For the recording sensitivity, the smallervalue of Pp is better.

The number of repetitions was determined based on the average jittervalue in this example. The information recording medium 25 wasirradiated with the laser light 12 while changing the power between Ppand Pb set as above, and a random signal having a mark length of 0.42 μm(3T) to 1.96 μm (14T) was recorded (by groove recording) repeatedly andcontinuously in the predetermined number of times on the same groovesurface. Then, the average jitter value was measured. The average jittervalue was measured when the number of repetitions is 1, 2, 3, 5, 10,100, 200 and 500. While the number of repetitions was in the range from1000 to 10000, measurement was performed every 1000 times, and while thenumber of repetitions was in the range from 20000 to 100000, measurementwas performed every 10000 times. The time when the average jitter valuereached 13% was determined to be the limit for repeated rewriting, andthe repeated rewriting performance was evaluated by the number ofrepetitions at this point. The repeated rewriting performance isevaluated to be higher as the number of repetitions is larger. When theinformation recording medium is used as an external memory of acomputer, it is preferable that the number of repetitions is 100000 ormore. When the information recording medium is used in a video/audiorecorder, it is preferable that the number of repetitions is 10000 ormore.

TABLE 4 materials of first dielectric number of layer and seconddielectric atom % conversion repetitions peak Sample No. layer (mol %)per element peeling (times) power Pp(mW) 3-1 (ZrO₂)₅₀ (La₂O₃)₅₀Zr_(12.5) La₂₅ O_(62.5) no 20000 12.6 3-2 (ZrO₂)₅₀ (CeO₂)₅₀ Zr_(16.7)Ce_(16.7) O_(66.6) no 20000 12.6 3-3 (ZrO₂)₅₀ (Al₂O₃)₅₀ Zr_(12.5) Al₂₅O_(62.5) no 30000 13.5 3-4 (ZrO₂)₅₀ (Ga₂O₃)₅₀ Zr_(12.5) Ga₂₅ O_(62.5) no100000 12.5 3-5 (ZrO₂)₅₀ (In₂O₃)₅₀ Zr_(12.5) In₂₅ O_(62.5) no 10000013.0 3-6 (ZrO₂)₅₀ (MgO)₅₀ Zr₂₀ Mg₂₀ O₆₀ no 10000 12.6 3-7 (ZrO₂)₅₀(Y₂O₃)₅₀ Zr_(12.5) Y₂₅ O_(62.5) no 100000 13.2 Com. Ex. 3-1 (ZrO₂)₅₀(Cr₂O₃)₅₀ Zr_(12.5) Cr₂₅ O_(62.5) no 100000 15.0

As shown in Table 4, samples 3-1 to 3-7 have good adhesion, repeatedrewriting performance and recording sensitivity. In particular, in(ZrO₂)₅₀(Ga₂O₃)₅₀ (mol %) of sample 3-4, a repeated rewritingperformance of 100000 times and a high recording sensitivity of 12.5 mWwere obtained. On the other hand, in a comparative example in which anoxide-based material layer of (ZrO₂)₅₀(Cr₂O₃)₅₀ (mol %) was used, therecording sensitivity was more than 14 mW. These results confirmed thatthe recording sensitivity was improved by using an oxide-based materiallayer containing a mixture of ZrO₂ and E.

Furthermore, the same media as samples 3-1 to 3-7 and the comparativeexample 3-1 except that HfO₂ was used instead of ZrO₂ were produced(samples 3-11 to 3-17 and comparative example 3-2), and were evaluatedin the same manner. The results shown in Table 5 were obtained. Theseresults confirmed that the recording sensitivity of the oxide-basedmaterial layer containing a material containing HfO₂ and (E) also wasimproved.

TABLE 5 materials of first dielectric number of peak layer and seconddielectric atom % conversion repetitions power Pp Sample No. layer (mol%) per element peeling (times) (mW) 3-11 (HfO₂)₅₀ (La₂O₃)₅₀ Hf_(12.5)La₂₅ O_(62.5) no 20000 12.4 3-12 (HfO₂)₅₀ (CeO₂)₅₀ Hf_(16.7) Ce_(16.7)O_(66.6) no 20000 12.4 3-13 (HfO₂)₅₀ (Al₂O₃)₅₀ Hf_(12.5) Al₂₅ O_(62.5)no 30000 13.3 3-14 (HfO₂)₅₀ (Ga₂O₃)₅₀ Hf_(12.5) Ga₂₅ O_(62.5) no 10000012.3 3-15 (HfO₂)₅₀ (In₂O₃)₅₀ Hf_(12.5) In₂₅ O_(62.5) no 100000 12.9 3-16(HfO₂)₅₀ (MgO)₅₀ Hf₂₀ Mg₂₀ O₆₀ no 10000 12.4 3-17 (HfO₂)₅₀ (Y₂O₃)₅₀Hf_(12.5) Y₂₅ O_(62.5) no 100000 13.0 Com. Ex. 3-2 (HfO₂)₅₀ (Cr₂O₃)₅₀Hf_(12.5) Cr₂₅ O_(62.5) no 100000 14.8

Example 4

In Example 4, the applicable range of the composition of the(ZrO₂)₅₀(Ga₂O₃)₅₀ (mol %) oxide-based material layer that exhibitedparticularly good performance in Example 3 was determined. Similarly toExample 3, oxide-based material layers with varied composition ratios ofZrO₂ and Ga₂O₃ were used for the first dielectric layer 2 and the seconddielectric layer 6 of the information recording medium 25. Theoxide-based material layer used here was indicated by(ZrO₂)_(X)(Ga₂O₃)_(100-X) (mol %), and 11 types of medium samples(sample 4-1 to 4-11) formed of oxide-based material layers having adifferent value X were produced.

The results of evaluating the adhesion, the repeated rewritingperformance, and the recording sensitivity in the same manner as inExample 3 were shown in Table 6.

TABLE 6 materials of first dielectric number of peak layer and seconddielectric atom % conversion repetitions power Pp Sample No. layer (mol%) per element peeling (times) (mW) 4-1 (ZrO₂)₉₅ (Ga₂O₃)₅ Zr_(31.6)Ga_(3.3) O_(65.1) no 100000 12.0 4-2 (ZrO₂)₉₀ (Ga₂O₃)₁₀ Zr_(28.1)Ga_(6.3) O_(65.6) no 100000 12.1 4-3 (ZrO₂)₈₀ (Ga₂O₃)₂₀ Zr_(23.5)Ga_(11.8) O_(64.7) no 100000 12.2 4-4 (ZrO₂)₇₀ (Ga₂O₃)₃₀ Zr_(19.4)Ga_(16.7) O_(63.9) no 100000 12.3 4-5 (ZrO₂)₆₀ (Ga₂O₃)₄₀ Zr_(15.8)Ga_(21.1) O_(63.1) no 100000 12.4 4-6 (ZrO₂)₅₀ (Ga₂O₃)₅₀ Zr_(12.5) Ga₂₅O_(62.5) no 100000 12.5 4-7 (ZrO₂)₄₀ (Ga₂O₃)₆₀ Zr_(9.5) Ga_(28.6)O_(61.9) no 100000 12.6 4-8 (ZrO₂)₃₀ (Ga₂O₃)₇₀ Zr_(6.8) Ga_(31.8)O_(61.4) no 100000 12.7 4-9 (ZrO₂)₂₀ (Ga₂O₃)₈₀ Zr_(4.3) Ga_(34.8)O_(60.9) no 100000 12.8 4-10 (ZrO₂)₁₀ (Ga₂O₃)₉₀ Zr_(2.1) Ga_(37.5)O_(60.4) no 100000 12.9 4-11 (ZrO₂)₅ (Ga₂O₃)₉₅ Zr_(1.0) Ga_(38.8)O_(60.2) no 100000 13.0 Com. Ex. 4-1 (ZrO₂)₅₀ (Cr₂O₃)₅₀ no 100000 14.5

As shown in Table 6, for all of the information recording media 25 inwhich (ZrO₂)_(X)(Ga₂O₃)_(100-X) (mol %) oxide-based material layers wereused for the first dielectric layer 2 and the second dielectric layer 6,good adhesion, a repeated rewriting performance of 100000 times, and arecording sensitivity of less than 14 mW were obtained. These resultsmade it evident that (ZrO₂)_(X)(Ga₂O₃)_(100-x) (mol %) can be used in awide range of 0<X<100. The materials used in this example can beexpressed by formula (2). Therefore, the results also made it evidentthat the materials expressed by formula (2) can be used in a wide rangeof 0<X1<100.

Furthermore, regarding the (HfO₂)₅₀(Ga₂O₃)₅₀ (mol %) oxide-basedmaterial layer that exhibited particularly good performance in Example3, 11 types of medium samples (sample 4-21 to 4-31) were produced andevaluated in the same manner.

TABLE 7 materials of first dielectric number of peak layer and seconddielectric atom % conversion repetitions power Pp Sample No. layer (mol%) per element peeling (times) (mW) 4-21 (HfO₂)₉₅ (Ga₂O₃)₅ Hf_(31.6)Ga_(3.3) O_(65.1) no 100000 11.8 4-22 (HfO₂)₉₀ (Ga₂O₃)₁₀ Hf_(28.1)Ga_(6.3) O_(65.6) no 100000 11.8 4-23 (HfO₂)₈₀ (Ga₂O₃)₂₀ Hf_(23.5)Ga_(11.8) O_(64.7) no 100000 12.0 4-24 (HfO₂)₇₀ (Ga₂O₃)₃₀ Hf_(19.4)Ga_(16.7) O_(63.9) no 100000 12.1 4-25 (HfO₂)₆₀ (Ga₂O₃)₄₀ Hf_(15.8)Ga_(21.1) O_(63.1) no 100000 12.2 4-26 (HfO₂)₅₀ (Ga₂O₃)₅₀ Hf_(12.5) Ga₂₅O_(62.5) no 100000 12.3 4-27 (HfO₂)₄₀ (Ga₂O₃)₆₀ Hf_(9.5) Ga_(28.6)O_(61.9) no 100000 12.4 4-28 (HfO₂)₃₀ (Ga₂O₃)₇₀ Hf_(6.8) Ga_(31.8)O_(61.4) no 100000 12.5 4-29 (HfO₂)₂₀ (Ga₂O₃)₈₀ Hf_(4.3) Ga_(34.8)O_(60.9) no 100000 12.6 4-30 (HfO₂)₁₀ (Ga₂O₃)₉₀ Hf_(2.1) Ga_(37.5)O_(60.4) no 100000 12.7 4-31 (HfO₂)₅ (Ga₂O₃)₉₅ Hf_(1.0) Ga_(38.8)O_(60.2) no 100000 12.8 Com. Ex. 4-2 (HfO₂)₅₀ (Cr₂O₃)₅₀ no 100000 14.2

As shown in Table 7, the results made it evident that(HfO₂)_(X)(Ga₂O₃)_(100-X) (mol %) can be used in a wide range of0<X<100. The materials used in this example can be expressed by formula(4). Therefore, the results also made it evident that the materialsexpressed by formula (4) can be used in a wide range of 0<X2<100.

Example 5

In Example 5, the information recording medium 25 was produced using anoxide-based material layer of (D3)_(X3)(SiO₂)_(Z1)(E2)_(100-X3-Z1) (mol%) obtained by using SiO₂ as g in the material expressed by formula (7)for the first dielectric layer 2 and the second dielectric layer 6. Morespecifically, ZrO₂ is contained as D3, each of La₂O₃, CeO₂, Al₂O₃,Ga₂O₃, In₂O₃, MgO, and Y₂O₃ is used as E2, and X3=Z1=25. In the step offorming the first dielectric layer 2 and the second dielectric layer 6,a sputtering target (diameter: 100 mm, thickness: 6 mm) made of the(D3)_(X3)(SiO₂)_(Z)(E2)_(100-X3-Z) (mol %) material as described abovewas provided in a film-formation apparatus, and sputtering was performedin an Ar gas atmosphere with a pressure of 0.13 Pa at a high frequencypower of 400 W. The materials and the steps of the other layers were thesame as in Example 3. As a comparative example, a medium sample(comparative example 5-1) in which the first dielectric layer 2 and thesecond dielectric layer 6 were formed of (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol%) was produced.

Thus, several medium samples (samples 5-1 to 5-7) were produced andevaluated, regarding the adhesion, the repeated rewriting performance,and the recording sensitivity in the same manner as in Example 3. Table8 shows the results.

TABLE 8 materials of first dielectric number of peak layer and seconddielectric atom % conversion repetitions power Pp Sample No. layer (mol%) per element peeling (times) (mW) 5-1 (ZrO₂)₂₅ (SiO₂)₂₅ (La₂O₃)₅₀Zr_(6.3) Si_(6.3) La_(25.0) O_(62.4) no 50000 11.6 5-2 (ZrO₂)₂₅ (SiO₂)₂₅(CeO₂)₅₀ Zr_(8.3) Si_(8.3) Ce_(16.7) O_(66.7) no 50000 11.6 5-3 (ZrO₂)₂₅(SiO₂)₂₅ (Al₂O₃)₅₀ Zr_(6.3) Si_(6.3) Al_(25.0) O_(62.4) no 80000 12.55-4 (ZrO₂)₂₅ (SiO₂)₂₅ (Ga₂O₃)₅₀ Zr_(6.3) Si_(6.3) Ga_(25.0) O_(62.4) no140000 11.5 5-5 (ZrO₂)₂₅ (SiO₂)₂₅ (In₂O₃)₅₀ Zr_(6.3) Si_(6.3) In_(25.0)O_(62.4) no 130000 12.0 5-6 (ZrO₂)₂₅ (SiO₂)₂₅ (MgO)₅₀ Zn_(10.0)Si_(10.0) Mg_(20.0) O_(60.0) no 20000 11.6 5-7 (ZrO₂)₂₅ (SiO₂)₂₅(Y₂O₃)₅₀ Zr_(6.3) Si_(6.3) Y_(25.0) O_(62.4) no 120000 12.2 Com. Ex. 5-1(ZrO₂)₂₅ (SiO₂)₂₅ (Cr₂O₃)₅₀ Zr_(6.3) Si_(6.3) Cr_(25.0) O_(62.4) no130000 14.2

As shown in Table 8, in samples 5-1 to 5-7, good results were obtained,regarding all of the adhesion, the repeated rewriting performance, andthe recording sensitivity. Compared with the results of Table 4 ofExample 3, it was confirmed that the repeated rewriting performance wasimproved and the recording sensitivity was further improved by SiO₂being contained. In particular, in sample 5-4 in which(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) oxide-based material layer was used, arepeated rewriting performance of 100000 times or more and a recordingsensitivity of less than 12 mW were obtained. In the comparative exampleof (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %), the results was 14 mW<Pp.

Furthermore, the same medium samples as the samples 5-1 to 5-7 exceptthat HfO₂ was used as D3 were produced (samples 5-11 to 5-17), and wereevaluated in the same manner. Furthermore, as a comparative example, amedium sample (comparative example 5-2) in which the first dielectriclayer 2 and the second dielectric layer 6 were formed of(HfO)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %) was produced.

TABLE 9 materials of first dielectric number of peak layer and seconddielectric atom % conversion repetitions power Pp Sample No. layer (mol%) per element peeling (times) (mW) 5-11 (HfO₂)₂₅ (SiO₂)₂₅ (La₂O₃)₅₀Hf_(6.3) Si_(6.3) La_(25.0) O_(62.4) no 50000 11.2 5-12 (HfO₂)₂₅(SiO₂)₂₅ (CeO₂)₅₀ Hf_(8.3) Si_(8.3) Ce_(16.7) O_(66.7) no 50000 11.35-13 (HfO₂)₂₅ (SiO₂)₂₅ (Al₂O₃)₅₀ Hf_(6.3) Si_(6.3) Al_(25.0) O_(62.4) no80000 12.1 5-14 (HfO₂)₂₅ (SiO₂)₂₅ (Ga₂O₃)₅₀ Hf_(6.3) Si_(6.3) Ga_(25.0)O_(62.4) no 140000 11.2 5-15 (HfO₂)₂₅ (SiO₂)₂₅ (In₂O₃)₅₀ Hf_(6.3)Si_(6.3) In_(25.0) O_(62.4) no 130000 11.7 5-16 (HfO₂)₂₅ (SiO₂)₂₅(MgO)₅₀ Hf_(10.0) Si_(10.0) Mg_(20.0) O_(60.0) no 20000 11.4 5-17(HfO₂)₂₅ (SiO₂)₂₅ (Y₂O₃)₅₀ Hf_(6.3) Si_(6.3) Y_(25.0) O_(62.4) no 12000012.0 Com. Ex. 5-2 (HfO₂)₂₅ (SiO₂)₂₅ (Cr₂O₃)₅₀ Hf_(6.3) Si_(6.3)Cr_(25.0) O_(62.4) no 130000 14.0

As shown in Table 9, in samples 5-11 to 5-17, good results wereobtained, regarding all of the adhesiveness, the repeated rewritingperformance, and the recording sensitivity.

Example 6

In Example 6, an information recording medium (sample 6-1) in which thefirst dielectric layer 2 and the second interface layer 5 wereoxide-based material layers in the information recording medium 26 shownin FIG. 2 corresponding to Embodiment 2 described above was produced.Hereinafter, a method for producing the information recording medium 26will be described.

First, the same substrate as used in Example 3 was prepared as asubstrate 1. A first dielectric layer 2 having a thickness of 150 nm, arecording layer 4 having a thickness of 9 nm, a second interface layer 5having a thickness of 3 nm, a second dielectric layer 106 having athickness of 50 nm, a light-absorption correction layer 7 having athickness of 40 nm, and a reflective layer 8 having a thickness of 80 nmwere formed on the substrate 1 in this order by sputtering with thefollowing method.

In the step of forming the first dielectric layer 2, a sputtering target(diameter: 100 mm, thickness: 6 mm) of (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %)was provided in a film-formation apparatus, and high frequencysputtering was performed in an Ar gas atmosphere with a pressure of 0.13Pa. The power was 400 W.

For the second interface layer 5, similarly to the case for the firstdielectric layer 2, a sputtering target (diameter: 100 mm, thickness: 6mm) of (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) was provided in afilm-formation apparatus, and high frequency sputtering was performed inan Ar gas atmosphere with a pressure of 0.13 Pa. The power was 400 W.

The second dielectric layer 106 was formed by sputtering at a highfrequency of 400 W at a pressure of 0.13 Pa, using a sputtering target(diameter: 100 mm, thickness: 6 mm) of (ZnS)₈₀(SiO₂)₂₀ (mol %), in amixed gas of Ar gas (97%) and O₂ gas (3%). The recording layer 4, thelight-absorption correction layer 7 and the reflective layer 8 wereformed in the same manner as in Example 3.

As a comparative example, a medium (comparative example 6-1) in whichthe first dielectric layer 2 and the second interface layer 5 wereformed of (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %) was produced. The repeatedrewriting performance was evaluated by performing groove recording andland recording the produced information recording medium 26 andobtaining the number of repetitions by the method described in Example3. Table 10 shows the evaluation results.

TABLE 10 groove land rewriting rewriting performance power performancepower Sample adhesive number of (mW) number of (mW) No. peelingrepetitions Pp Pb repetitions Pp Pb 6-1 no 100000 or 10.5 4.2 100000 or11.0 4.7 more more Com. no 100000 or 13.0 5.8 100000 or 13.6 6.3 Ex.more more 6-1

As shown in Table 10, the information recording medium 26 in which thefirst dielectric layer 2 and the second interface layer 5 areoxide-based material layers have excellent adhesion, repeated rewritingperformance, peak power and bias power in groove recording and landrecording. The recording sensitivity was improved by about 20% by using(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) than when (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀(mol %) was used.

When a medium in which an oxide-based material layer containing 60 mol %of SiO₂ that is (ZrO₂)₂₀(SiO₂)₆₀(Ga₂O₃)₂₀ (mol %) is used for the firstdielectric layer 2 and the second interface layer 5 is produced andevaluated, the adhesion of the medium is deteriorated and it wasobserved that the medium was peeled in the peripheral portion.Therefore, it is preferable that the concentration of SiO₂ is 50 mol %or less.

Example 7

In Example 7, in the information recording medium 27 shown in FIG. 3corresponding to Embodiment 3 described above, an information recordingmedium (sample 7-1) in which the first interface layer 3 and the seconddielectric layer 6 are oxide-based material layers was produced.Hereinafter, a method for producing the information recording medium 27will be described.

First, as the substrate 1, the same substrate as used in Example 1 wasprepared. A first dielectric layer 102 having a thickness of 150 nm, afirst interface layer 3 having a thickness of 5 nm, a recording layer 4having a thickness of 9 nm, a second dielectric layer 6 having athickness of 50 nm, a light-absorption correction layer 7 having athickness of 40 nm, and a reflective layer 8 having a thickness of 80 nmwere formed on the substrate 1 in this order by sputtering with themethod described below.

The first dielectric layer 102 was formed of (ZnS)₈₀(SiO₂)₂₀ (mol %).The first interface layer 3 was formed of (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol%). The recording layer 4 was formed in the same manner as in Example 3.Therefore, the composition was Ge₂₇Sn₈Sb₁₂Te₅₃ (atom %).

The second dielectric layer 6 was formed by performing high frequencysputtering with a sputtering target (diameter: 100 mm, thickness: 6 mm)of (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) in an Ar gas atmosphere with apressure of 0.13 Pa.

The light-absorption correction layer 7 and the reflective layer 8 wereformed in the same manner as those of the information recording medium25 described in Example 3.

For comparison, a medium (comparative example 7-1) in which the firstinterface layer 3 and the second dielectric layer 6 were formed of(ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %) was produced as a comparative example.

The obtained samples were evaluated regarding the adhesion of thedielectric layer and the repeated rewriting performance. Table 11 showsthe evaluation results. The method for evaluating the adhesion and therepeated rewriting performance is such as described above. However, inthis example, the adhesion was evaluated by examining whether or notpeeling between the recording layer 4 and the second dielectric layer 6in contact therewith occurred.

TABLE 11 Groove land rewriting rewriting performance power performancepower Sample adhesive number of (mW) number of (mW) No. peelingrepetitions Pp Pb repetitions Pp Pb 7-1 no 100000 or 10.7 4.4 100000 or11.1 4.8 more more Com. no 100000 or 13.2 6.0 100000 or 14.0 6.7 Ex.more more 7-1

As shown in Table 11, the information recording medium 27 in which thefirst interface layer 3 and the second dielectric layer 6 areoxide-based material layers have excellent adhesion, repeated rewritingperformance, peak power and bias power in groove recording and landrecording. The recording sensitivity was improved by about 20% by using(ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %) than when (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀(mol %) was used.

Example 8

In Example 8, an information recording medium (sample 8-1) in which thefirst interface layer 3 and the second interface layer 5 wereoxide-based material layers in the information recording medium 28 shownin FIG. 4 corresponding to Embodiment 4 described above was produced.Hereinafter, a method for producing the information recording medium 28will be described.

First, the same substrate as used in Example 3 was prepared as asubstrate 1. A first dielectric layer 102 having a thickness of 150 nm,a first interface layer 3 having a thickness of 5 nm, a recording layer4 having a thickness of 9 nm, a second interface layer 5 having athickness of 3 nm, a second dielectric layer 106 having a thickness of50 nm, a light-absorption correction layer 7 having a thickness of 40nm, and a reflective layer 8 having a thickness of 80 nm were formed onthe substrate 1 in this order by sputtering.

The first dielectric layer 102 was formed of (ZnS)₈₀(SiO₂)₂₀ (mol %).The second dielectric layer 106 was formed in the same manner.

In the step of forming the first interface layer 3, a sputtering target(diameter: 100 mm, thickness: 6 mm) of (ZrO₂)₂₅(SiO₂)₂₅(Ga₂O₃)₅₀ (mol %)was provided in a film-formation apparatus, and high frequencysputtering was performed in an Ar gas atmosphere with a pressure of 0.13Pa. The power was 400 W. The second interface layer 5 was formed in thesame manner.

The recording layer 4 was formed in the same manner as in Example 3.Therefore, the composition thereof was Ge₂₇Sn₈Sb₁₂Te₅₃ (atom %). Thelight-absorption correction layer 7 was formed of Ge₈₀Cr₂₀ (atom %) inthe same manner as in Example 3. The reflective layer 8 was formed of anAg—Pd—Cu alloy in the same manner as in Example 3.

As a comparative example, a medium (comparative example 8-1) in whichthe first interface layer 3 and the second interface layer 5 were formedof (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %) was produced. The adhesion and therepeated rewriting performance of the obtained sample were evaluated.The adhesion was evaluated by investigating whether or not peelingoccurred between the recording layer 4 and the interface layer incontact therewith, more specifically, at at least one of the interfacebetween the recording layer 4 and the first interface layer 3 and theinterface between the recording layer 4 and the second interface layer5. The repeated rewriting performance was evaluated by performing grooverecording and land recording and obtaining the number of repetitions ofthe groove recording and the land recording according to the methoddescribed in Example 3. Table 12 shows the evaluation results.

TABLE 12 Groove land rewriting rewriting performance power performancepower Sample adhesive number of (mW) number of (mW) No. peelingrepetitions Pp Pb repetitions Pp Pb 8-1 no 100000 or 10.0 4.0 100000 or10.3 4.3 more more Com. no 100000 or 10.8 4.8 100000 or 11.3 5.2 Ex.more more 8-1

As shown in Table 12, it was confirmed that the performance of thesample 8-1 in which an oxide-based material layer was used as theinterface layer had a lower Pp by about 1 mW than that of thecomparative example 8-1, and even if it was used as an interface layerhaving a small thickness, the recording sensitivity was improved. Inaddition, the adhesion and the repeated rewriting performance were equalto or better than those of the comparative example 8-1.

The number of layers constituting the sample 8-1 is the same as in theconventional information recording medium. Therefore, the effect causedby reducing the number of the layers cannot be obtained. However, whenusing the oxide-based material layer for an interface layer, theinterface layer can be formed, not by reactive sputtering, but bysputtering in an atmosphere with Ar gas alone. Therefore, easy andstable production can be maintained, and higher transparency than(ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀ (mol %) material can be obtained, and theperformance such as the recording sensitivity of the medium can beimproved.

Furthermore, 14 media in which the first interface layer 3 and thesecond interface layer 5 were formed of the oxide-based material layerexpressed by formula (7), (8), (11) or (12) were produced (media 8-11 to8-24), and evaluated in the same manner as for the medium 8-1. Table 13shows the oxide-based materials used and the evaluation results.Furthermore, as comparative examples 8-2 to 8-5, media in which thefirst interface layer 3 and the second interface layer 5 were formed ofthe oxide-based material layer that does not contain E2 of the materialsexpressed by formula (7), (8), (11) or (12) were produced, and evaluatedin the same manner.

TABLE 13 Sample materials of first interface layer adhesive No. andsecond interface layer (mol %) atom % conversion per element peeling8-11 (ZrO₂)₄₀ (SiC)₄₀ (La₂O₃)₂₀ Zr_(13.3) Si_(13.3) La_(13.3) C_(13.3)O_(46.8) no 8-12 (ZrO₂)₁₀ (SiC)₁₀ (Ga₂O₃)₈₀ Zr_(2.2) Si_(2.2) Ga_(35.6)C_(2.2) O_(57.8) no 8-13 (ZrO₂)₄₈ (SiC)₄₈ (In₂O₃)₄ Zr_(18.5) Si_(18.5)In_(3.1) C_(18.5) O_(41.4) no 8-14 (ZrO₂)₂₅ (SiO₂)₂₅ (Cr₂O₃)₂₅ (Ga₂O₃)₂₅Zr_(6.3) Si_(6.3) Ga_(12.5) Cr_(12.5) O_(62.4) no 8-15 (ZrO₂)₂₀ (SiO₂)₃₀(S₃N₄)₄₀ (Ga₂O₃)₁₀ Zr_(4.2) Si_(31.2) Ga_(4.2) N_(33.3) O_(27.1) no 8-16(ZrO₂)₄₀ (SiO₂)₁₀ (SiC)₁₀ (Ga₂O₃)₄₀ Zr_(10.8) Si_(5.4) Ga_(21.6) C_(2.7)O_(59.5) no 8-17 (HfO₂)₁₀ (Cr₂O₃)₁₀ (MgO)₈₀ Hf_(4.2) Mg_(33.3) Cr_(8.3)O_(54.2) no 8-18 (HfO₂)₂₅ (Cr₂O₃)₂₅ (CeO₂)₅₀ Hf_(7.1) Ce_(14.3)Cr_(14.3) O_(64.3) no 8-19 (HfO₂)₄₀ (Cr₂O₃)₂₀ (Ga₂O₃)₄₀ Hf_(9.5)Ga_(19.0) Cr_(9.5) O_(62.0) no 8-20 (HfO₂)₂₀ (SiO₂)₁₀ (Cr₂O₃)₁₀(In₂O₃)₆₀ Hf_(4.5) Si_(2.3) In_(27.3) Cr_(4.5) O_(61.4) no 8-21 (HfO₂)₂₀(SiO₂)₅₀ (S₃N₄)₁₅ (In₂O₃)₁₅ Hf_(5.1) Si_(24.4) In_(7.7) N_(15.4)O_(47.4) no 8-22 (HfO₂)₈₀ (SiO₂)₂ (SiC)₃ (In₂O₃)₁₅ Hf_(24.5) Si_(1.5)In_(9.2) C_(0.9) O_(63.9) no 8-23 (ZrO₂)₂₅ (Cr₂O₃)₂₅ (SiC)₂₅ (Ga₂O₃)₂₅Zr_(6.7) Si_(6.7) Ga_(13.3) Cr_(13.3) C_(6.7) O_(53.3) no 8-24 (ZrO₂)₂₅(Cr₂O₃)₂₅ (S₃N₄)₂₅ (MgO)₂₅ Zr_(5.9) Si_(17.6) Mg_(5.9) Cr_(11.8)N_(23.5) O_(35.3) no Com. Ex. (ZrO₂)₅₀ (SiC)₅₀ no 8-2 Com. Ex. (ZrO₂)₂₅(SiO₂)₂₅ (S₃N₄)₅₀ occurred 8-3 Com. Ex. (HfO₂)₅₀ (Cr₂O₃)₅₀ no 8-4 Com.Ex. (HfO₂)₄₀ (SiO₂)₄₀ (SiC)₂₀ occurred 8-5 groove land rewritingrewriting performance power performance power Sample number of (mW)number of (mW) No. repetitions Pp Pb repetitions Pp Pb judgement 8-11100000 or 12.0 5.5 100000 12.5 5.8 ∘ more 8-12 100000 or 10.5 4.3 10000011.0 4.6 ∘ more 8-13 100000 or 11.0 5.0 100000 11.5 5.0 ∘ more 8-14100000 or 11.0 5.4 100000 11.5 5.6 ∘ more 8-15 100000 or 10.5 4.6 10000011.0 4.9 ∘ more 8-16 100000 or 11.0 5.1 100000 11.5 5.2 ∘ more 8-17100000 or 13.0 6.0 100000 13.5 6.3 ∘ more 8-18 100000 or 12.0 5.2 10000012.5 5.4 ∘ more 8-19 100000 or 11.0 5.0 100000 11.5 5.2 ∘ more 8-20100000 or 12.5 6.0 100000 13.0 6.2 ∘ more 8-21 100000 or 11.5 5.3 10000012.0 5.5 ∘ more 8-22 100000 or 12.0 5.8 100000 12.5 6.1 ∘ more 8-23100000 or 10.8 4.7 100000 11.2 5.1 ∘ more 8-24 100000 or 10.5 4.5 10000010.9 4.9 ∘ more Com. Ex. 100000 or 14.0 6.5 100000 14 or 7.0 x 8-2 moremore Com. Ex. 50000 10.5 4.8 30000 10.8 5.0 x 8-3 Com. Ex. 2000 15 or7.5 or 1000 15 or 7.5 or x 8-4 more more more more Com. Ex. 100000 or11.0 5.0 100000 11.3 5.1 x 8-5 more

As shown in Table 13, when the oxide-based material layer expressed byeither one of the materials expressed by formula (7) was used as theinterface layer, the recording sensitivity was good, and the adhesionand the repeated rewriting performance were equal to or more than thoseof the comparative example.

Example 9

In Example 9, oxide-based material layers containing ZrO₂ and either oneof La₂O₃, CeO₂, Al₂O₃, In₂O₃, MgO and Y₂O₃ were investigated in the samemanner as in Examples 6, 7, and 8. Then, good adhesion and repeatedrewriting performance were obtained, and the recording sensitivity alsowas good.

Example 10

In Example 10, oxide-based material layers containing HfO₂ and eitherone of La₂O₃, CeO₂, Al₂O₃, Ga₂O₃, In₂O₃, MgO and Y₂O₃ were investigatedin the same manner as in Examples 6, 7, and 8. Then, good adhesion andrepeated rewriting performance were obtained, and the recordingsensitivity also was good.

As described above, the oxide-based material layer can be used as thedielectric layers or the interface layers having the structure of theinformation recording medium 25 shown in FIG. 1, having the structure ofthe information recording medium 26 shown in FIG. 2, having thestructure of the information recording medium 27 shown in FIG. 3, andhaving the structure of the information recording medium 28 shown inFIG. 4. In this case, the recording sensitivity can be improved withoutdeteriorating the adhesion and the repeated rewriting performance,compared with the case when the conventional (ZrO₂)₂₅(SiO₂)₂₅(Cr₂O₃)₅₀(mol %) is used. Furthermore, when the oxide-based material layer isused as at least the first dielectric layer 2 or the second dielectriclayer 6, it is possible to reduce the number of the layers from 7 to 6or 5, compared with the structure of information recording medium 31shown in FIG. 12. The films can be formed in a higher speed under moreoptimal conditions, because the films do not have to be formed byreactive film-formation, and the dependency of film quality on theapparatus is small. Therefore, using the oxide-based material layer forthe dielectric layers or the interface layers can provide an advantagethat the mass production starting process of information recording mediacan proceed more rapidly.

Example 11

In Example 11, an information recording medium (sample 11-1) in whichthe first and second dielectric layers 2 and 6 were oxide-based materiallayers in the information recording medium 29 shown in FIG. 5corresponding to Embodiment 5 described above was produced. Hereinafter,a method for producing the information recording medium 29 will bedescribed.

First, a round polycarbonate substrate having a diameter of 120 mm and athickness of 1.1 mm that previously is provided with guide grooveshaving a depth of 21 nm and a track pitch (distance between the centersof the groove surface and the groove surface in a plane parallel to themain plane of the substrate) of 0.32 μm on one surface was prepared as asubstrate 101.

A reflective layer 8 having a thickness of 80 nm, a second dielectriclayer 6 having a thickness of 16 nm, a recording layer 4 having athickness of 10 nm, and a first dielectric layer 2 having a thickness of68 nm were formed on the substrate 101 in this order by sputtering withthe following method.

The reflective layer 8 was formed in the same manner as in Example 1. Inthe step of forming the second dielectric layer 6, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of (ZrO₂)₃₅(SiO₂)₃₅(Ga₂O₃)₃₀(mol %) was provided in a film-formation apparatus, and high frequencysputtering was performed in an Ar gas atmosphere with a pressure of 0.13Pa. The power was 400 W. The first dielectric layer 2 was formed in thesame manner.

In the step of forming the recording layer 4, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of a Ge—Bi—Te material wasprovided in a film-formation apparatus, and DC sputtering was performed.The power was 100 W. During sputtering, a mixed gas of Ar gas (97%) andN₂ gas (3%) was introduced. The pressure during sputtering was 0.13 Pa.The composition of the recording layer 4 was Ge₄₅Bi₄Te₅₁.

After the first dielectric layer 2 was formed, UV curable resin wasapplied onto the first dielectric layer 2. A round polycarbonatesubstrate having a diameter of 120 mm and a thickness of 90 μm wasattached tightly onto the applied UV curable resin as a dummy substrate110. Then, irradiation of ultraviolet rays was performed from the sideof the dummy substrate 110 to cure the resin. Thus, the adhesive layer 9made of the cured resin was formed in a thickness of 10 μm, and thedummy substrate 110 was attached onto the first dielectric layer 2 viathe adhesive layer 9 at the same time.

After the dummy substrate 110 was attached, the initialization step wasperformed using a semiconductor laser having a wavelength of 670 nm. Inthe initialization step, the substantially entire recording layer 4positioned in a circular region in a 22 to 60 mm range of the radius ofthe information recording medium 29 was crystallized. The production ofthe information recording medium 29 (sample 11-1) was finished with theend of the initialization. The Rc obtained by actual measurement of theproduced information recording medium 29 (in the plane portion withoutconcavities and convexities) was 20%, and the Ra obtained by actualmeasurement was 2%.

As a comparative example, a medium sample (comparative example 11-1) inwhich the first dielectric layer 2 and the second dielectric layer 6were formed of (ZrO₂)₃₅(SiO₂)₃₅(Cr₂O₃)₃₀ (mol %) and other materialswere the same as those of the information recording medium 29 wasproduced.

The adhesion and the repeated rewriting performance were evaluated,regarding the obtained samples. Table 14 shows the evaluation results.The adhesion was evaluated in the same manner as described in Example 1.The repeated rewriting performance was evaluated by a different methodfrom that used in Example 1. The method will be described below.

The repeated rewriting performance of the information recording medium29 was evaluated with an information recording system having the samestructure as that used in Example 1. For evaluation of the informationrecording medium 29, recording corresponding to a capacity of 25 GB wasperformed using a semiconductor laser with a wavelength of 405 nm and anobjective lens having a numerical aperture of 0.85. The linear velocityat which the information recording medium 29 was rotated was 4.92 m/sec(data transfer rate: 36 Mbps) and 9.84 m/sec (72 Mbps). A time intervalanalyzer was used to measure the jitter value to obtain the averagejitter value (the average value of the jitter between the front ends andthe jitter between the rear ends).

First, a peak power (Pp) and a bias power (Pb) were set in the followingprocedure in order to determine the measurement conditions fordetermining the number of repetitions. The information recording medium29 was irradiated with the laser light 12 while changing the powerbetween a peak power (mW) in a high power level and a bias power (mW) ina low power level, and a 2T signal having a mark length of 0.149 μm wasrecoded ten times on the same groove surface of the recording layer 4.After random signals from 2T to 8T were recorded 10 times, the averagejitter value was measured. During 10 times of recording of the randomsignals, the bias power was fixed to a predetermined value, and theaverage jitter value was measured with respect to each recordingcondition in which the peak power was changed variously. Then, the peakpower in which the average jitter value was a minimum was set as Pp1.The peak power was fixed to Pp1 and the average jitter value wasmeasured with respect to each recording condition in which the biaspower was changed variously, and the bias power in which the averagejitter value was a minimum was set as Pb. The bias power was fixed to Pbagain, and the average jitter value was measured with respect to eachrecording condition in which the peak power was changed variously. Then,the peak power in which the average jitter value was a minimum was setas Pp. It is preferable that the obtained Pp and Pb satisfy 5.2 mW orless in 36 Mbps, if the specification is taken into consideration. It ispreferable that the obtained Pp and Pb satisfy 6 mW or less in 72 Mbps,if the balance with the system is taken into consideration.

The number of repetitions was determined based on the average jittervalue in this example. The information recording medium 29 wasirradiated with the laser light 12 while changing the power between Ppand Pb set as above, and a random signal was recoded repeatedly andcontinuously in the predetermined number of times on the same groovesurface. Then, the average jitter value was measured. The average jittervalue was measured when the number of repetitions is 1, 2, 3, 5, 10,100, 200, 500, 1000, 2000, 3000, 5000, 7000 and 10000. The time when theaverage jitter value was increased by 3%, based on the average jittervalue when recording was repeated 10 times, was determined to be thelimit for repeated rewriting, and the repeated rewriting performance isevaluated by the number of repetitions at this point. The repeatedrewriting performance was evaluated to be higher as the number ofrepetition is larger. It is preferable that the number of repetitions ofthe information recording medium 29 is 10000 or more.

TABLE 14 36 Mbps 72 Mbps rewriting rewriting performance powerperformance power Sample number of (mW) number of (mW) No peelingrepetitions Pp Pb repetitions Pp Pb 11-1 no 10000 or 5.0 2.3 10000 or5.5 2.5 more more Com. no 10000 or 5.6 2.6 10000 or 7.0 2.8 Ex. moremore 11-1

The information recording medium 29 of the sample 11-1 of this exampleis different in the film formation order of the layers on the substrate,the recording conditions (the laser wavelength and the numericalaperture of the lens) and recording capacity from the informationrecording medium 25 shown in FIG. 1. The recording capacity of thesample 11-1 has five times as much as the information recording medium25 shown in FIG. 1. However, regardless of these differences, as shownin Table 14, the recording sensitivity that satisfies the specificationwith 25 GB capacity was obtained by using oxide-based material layers of(ZrO₂)₃₅(SiO₂)₃₅(Ga₂O₃)₃₀ (mol %) for the first dielectric layer 2 andthe second dielectric layer 6. In the comparative example, the recordingsensitivity was not satisfactory.

In the structure of the information recording medium 29, even if onlythe first dielectric layer 2 or the second dielectric layer 6 is anoxide-based material layer, the same results were obtained. That is, atleast one of the interface layers that are necessary when(ZnS)₈₀(SiO₂)₂₀ (mol %) is used can be reduced, and the same performancecan be obtained. The oxide-based material layer used in the presentinvention is free of S (sulfur), and therefore even if the oxide-basedmaterial layer is in contact with the reflective layer 8 containing Agat its interface, atomic diffusion does not occur. Thus, a four layerstructure is possible. A layer for regulating absorption or reflectionof light in the recording layer can be formed, if necessary, between thereflective layer 8 and the second dielectric layer 6. Such a layer canbe formed of one or two or more materials selected from the groupconsisting of metals, non-metals, semi-metals, semiconductors anddielectrics and these compounds. Preferably, such a layer has arefractive index of 4 or less and an extinction coefficient of 4 or lesswith respect to light in the vicinity of a wavelength of 405 nm.

Example 12

In Example 12, an information recording medium (sample 12-1) in whichthe fifth dielectric layers 19, the fourth dielectric layer 17, thesecond dielectric layer 6, and the first dielectric layer 2 wereoxide-based material layers in the information recording medium 30 shownin FIG. 6 corresponding to Embodiment 6 described above was produced.Hereinafter, a method for producing the information recording medium 30will be described.

First, the same substrate as the substrate 101 used in Example 11 wasprepared as a substrate 101. A second reflective layer 20 having athickness of 80 nm, a fifth dielectric layer 19 having a thickness of 16nm, a second recording layer 18 having a thickness of 10 nm, and afourth dielectric layer 17 having a thickness of 68 nm were formed onthe substrate 101 in this order by sputtering, and thus a secondinformation layer 22 was formed.

The second reflective layer 20 was formed of Ag—Pd—Cu alloy in the samemanner as in Example 1. In the step of forming the fifth dielectriclayer 19, a sputtering target (diameter: 100 mm, thickness: 6 mm) madeof (ZrO₂)₃₅(SiO₂)₃₅(Ga₂O₃)₃₀ (mol %) was provided in a film-formationapparatus, and high frequency sputtering was performed in an Ar gasatmosphere with a pressure of 0.13 Pa. The power was 400 W. The fourthdielectric layer 17 was formed in the same manner. The second recordinglayer 18 was formed using a sputtering target made of a Ge—Bi—Tematerial in the same manner as in Example 11.

Next, an intermediate layer 16 having a thickness of 25 μm that isprovided with grooves was formed. The intermediate layer 16 was formedin the following manner. First, UV curable resin was applied byspin-coating. A polycarbonate substrate having a surface that hasconcavities and convexities was provided on the applied UV curable resinwith its surface attached thereto. The concavities and convexities havea shape complementary to the guide grooves to be formed in theintermediate layer 16. Thereafter, the resin is irradiated withultraviolet rays from the side of the polycarbonate substrate to becured, and then the polycarbonate substrate was detached from theintermediate layer 16. Thus, the intermediate layer 16 made of cured UVcurable resin, in which the guide grooves had been formed by transfer,was obtained.

After the intermediate layer 16 was formed, the initialization step ofthe second information layer 22 was performed. In the initializationstep, using a semiconductor laser having a wavelength of 670 nm, thesubstantially entire second recording layer 18 positioned in a circularregion in a 22 to 60 mm range of the radius was crystallized.

Next, a third dielectric layer 15 having a thickness of 15 nm, a firstreflective layer 14 having a thickness of 10 nm, a second dielectriclayer 6 having a thickness of 12 nm, a first recording layer 13 having athickness of 6 nm, and a first dielectric layer 2 having a thickness of45 nm were formed on the intermediate layer 16 in this order bysputtering, and thus a first information layer 21 was formed.

In the step of forming the third dielectric layer 15, using a sputteringtarget (diameter: 100 mm, thickness: 6 mm) made of TiO₂ material, highfrequency sputtering was performed at a pressure of about 0.13 Pa. Thepower was 400 W. During the sputtering, a mixed gas of Ar gas (97%) andO₂ gas (3%) was introduced.

The first reflective layer 14 was formed in the same manner as thesecond reflective layer 20 and formed as a layer made of Ag—Pd—Cu alloy.The second dielectric layer 6 and the first dielectric layer 2 wereformed of (ZrO)₅₆(SiO₂)₁₄(Ga₂O₃)₃₀ (mol %).

In the step of forming the first recording layer 13, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of a Ge—Sn—Bi—Te material wasprovided in a film-formation apparatus, and DC sputtering was performedin at a pressure of 0.13 Pa. The power was 50W. During the sputtering,Ar gas (100%) was introduced. The pressure during the sputtering wasabout 0.13 Pa. The composition of the recording layer was Ge₄₀Sn₅Bi₄Te₅₁(atom %).

After the first dielectric layer 2 was formed, UV curable resin wasapplied onto the first dielectric layer 2. A round polycarbonatesubstrate having a diameter of 120 mm and a thickness of 65 μm wasattached tightly onto the applied UV curable resin as a dummy substrate110. Then, irradiation of ultraviolet rays was performed from the sideof the dummy substrate 110 to cure the resin. Thus, the adhesive layer 9made of the cured resin was formed in a thickness of 10 μm, and thedummy substrate 110 was attached onto the first dielectric layer 2 viathe adhesive layer at the same time.

After the dummy substrate 110 was attached, the initialization step ofthe first information layer 21 was performed using a semiconductor laserhaving a wavelength of 670 nm. In the initialization step, thesubstantially entire first recording layer 13 positioned in a circularregion in a 22 to 60 mm range of the radius was crystallized. Theproduction of the information recording medium 30 (sample 12-1) wasfinished with the end of the initialization.

Regarding each of the first information layer 21 and the secondinformation layer 22 of the sample 12-1, the adhesion of the dielectriclayer and the repeated rewriting performance of the informationrecording medium were evaluated. Table 15 shows these results togetherwith the peak power (Pp) and the bias power (Pb) obtained when therepeated rewriting performance was evaluated.

In this example, the adhesion of the dielectric layer was evaluatedunder the same conditions as in Example 1 by investigating whether ornot peeling occurred with respect to each of the first information layer21 and the second information layer 22. The repeated rewritingperformance of the information recording medium 30 was evaluated underthe same conditions as in Example 11 by recording informationcorresponding to 25 GB capacity on each of the first information layer21 and the second information layer 22 and investigating the number ofrepetitions with respect to each of the first information layer 21 andthe second information layer 22. When recording on the first informationlayer 21, the laser light 12 was focused on the first recording layer13, and when recording on the second information layer 22, the laserlight 12 was focused on the second recording layer 18. Taking thespecification and the balance of the system into consideration, it ispreferable that in 36 Mbps, Pp≦10.4 mW is satisfied in the firstinformation layer 21.

TABLE 15 Sample No. 12-1 first information layer second informationlayer rewriting rewriting performance performance data transfer adhesivenumber of Pp jitter number of Pp jitter rate (Mbps) peeling repetitions(mW) (%) repetitions (mW) (%) 36 no 100000 or 9.8 8.4 100000 or 10.0 6.4more more 72 100000 or 10.3 8.3 100000 or 10.6 6.5 more more

The information recording medium 30 of the sample 12-1 of this exampleis different from the information recording medium 25 shown in FIG. 1 inthe film formation order of the layers on the substrate, the number ofthe information layers (i.e., recording layers), which is 2, and therecording conditions (the laser wavelength and the numerical aperture ofthe lens). The recording capacity of the sample 12-1 has ten times asmuch as the information recording medium 25 shown in FIG. 1. However,regardless of these differences, it was confirmed that the aninformation recording medium having good performance was obtainedwithout providing an interface layer by using a layer made of a mixtureof ZrO₂, SiO₂ and Ga₂O₃ as the first, the second, the fourth and thefifth dielectric layers, 2, 6, 17, and 19. The designed value of Rc ofthe first information layer 21 of the produced information recordingmedium 30 (in the plane portion without concavities and convexities) was6%, and the designed value of Ra was 0.7%. The designed value of Rc ofthe second information layer 22 was 25%, and the designed value of Rawas 3%.

In this example, all of the first, the second, the fourth and the fifthdielectric layers, 2, 6, 17 and 19 constituting the informationrecording medium 30 are oxide-based material layers, but the presentinvention is not limited thereto. In a variation example, in theinformation recording medium of the present invention, at least one ofthese four dielectric layers is an oxide-based material layer, and theother dielectric layers can be made of (ZnS)₈₀(SiO₂)₂₀ (mol %). In thiscase, it is necessary to form an interface layer between the dielectriclayer made of (ZnS)₈₀(SiO₂)₂₀ (mol %) and the recording layer. Also insuch a variation example of the information recording medium, the objectof reducing the number of the layers can be achieved and goodperformance can be obtained, as in the sample 12-1 above.

In this example, all of the first, the second, the fourth and the fifthdielectric layers, 2, 6, 17 and 19 are oxide-based material layershaving the same composition, but the present invention is not limitedthereto. In a modified example, an information recording medium 30 inwhich these four dielectric layers have different compositions may beproduced. Such an information recording medium also exhibits goodperformance as in the sample 12-1 above.

Example 13

In Example 13, the performance of an information recording medium havingan oxide-based material layer containing a third component other thanthe oxides of the essential elements (e.g., an oxide of Zr and an oxideof the element L1 in the case of the oxide-based material layer (I); andan oxide of M1 and an oxide of the element L2 in the case of theoxide-based material layer (II); the same applies to the oxide-basedmaterial layers (III) and (IV)) was evaluated. In this example, theinformation recording medium 27 shown in FIG. 3 was produced in the samemanner as in Example 7, except for the material of the second dielectriclayer 6.

When forming the second dielectric layer 6, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of (ZrO₂)₃₅(SiO₂)₂₅(Ga₂O₃)₄₀(mol %) was provided in a film-formation apparatus, and sputtering chipsof Si₃N₄, Ge, and C, each of which had a size of 10 mm×10 mm×1 mm wereplaced on the surface of the sputtering target. Using the sputteringtarget having this sputtering chip, high frequency sputtering wasperformed in an Ar gas atmosphere with a pressure of 0.13 Pa to form asecond dielectric layer 6. The power was 400 W. When the formed layerwas analyzed, 98 mol % of (ZrO₂)₃₅(SiO₂)₂₅(Ga₂O₃)₄₀ (mol %) werecontained in the layer, and 1 mol % of Si₃N₄, 0.5 mol % of Ge, and 0.5mol % of C were contained as third components.

For comparison, the second dielectric layer 6 made of(ZrO₂)₃₅(SiO₂)₂₅(Ga₂O₃)₄₀ (mol %) that contains no third components wasproduced (comparative example 13-1). The other materials were the sameas those for the information recording medium 27 of this example. Theadhesion of the second dielectric layer 6 of each sample was evaluatedunder the same conditions as in Example 1. Furthermore, the repeatedrewriting performance of each sample was evaluated by performing grooverecording and land recording on each sample and investigating the numberof repetitions of the groove recording and the land recording accordingto the method described in Example 1. As a result, even with anoxide-based material layer containing 2 mol % of a third component, theperformance that satisfies Pp≦14 mW was obtained. Table 16 shows theevaluation results.

TABLE 16 groove land rewriting rewriting performance power performancepower Sample adhesive number of (mW) number of (mW) No. peelingrepetitions Pp Pb repetitions Pp Pb 13-1 no 100000 or 13.4 6.2 100000 or13.8 6.7 more more Com. no 100000 or 13.0 6.0 100000 or 13.3 6.4 Ex.more more 13-1

As shown in Table 16, the sample 13-1 exhibited the adhesion and therepeated rewriting performance comparable to the comparative sample.Although Pp and Pb of the sample 13-1 were higher than those of thecomparative sample, Pp≦14 mW and Pb≦7 mW were satisfied, and thus thesample 13-1 sufficiently can be put in practical use. These resultsconfirmed that when the dielectric layer contains an oxide of an elementselected from the group GM and an oxide of an element selected from thegroup GL in a combined amount of 98 mol % or more, good adhesion, goodrewriting performance and good recording sensitivity can be obtained.

Example 14

In Examples 1 to 13, information recording media on which informationwas recorded by optical means were produced. In Example 14, aninformation recording medium 207 on which information was to be recordedby electric means was produced, as shown in FIG. 9. This is a so-calledmemory.

The information recording medium 207 of this example was produced in thefollowing manner. First, a Si substrate 201 having a length of 5 mm, awidth of 5 mm and a thickness of 1 mm whose surface had been subjectedto nitriding was prepared. A lower electrode 202 of Au was formed to athickness of 0.1 μm in an area of 1.0 mm×1.0 mm on this substrate 201. Aphase change portion 205 of Ge₃₈Sb₁₀Te₅₂ (expressed by Ge₈Sb₂Te₁₁ as acompound) was formed to a thickness of 0.1 μm in a circular area with adiameter of 0.2 mm on the lower electrode 202. An insulating portion 206(a dielectric layer 206) of (ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀ (mol %) was formedto the same thickness as the phase change portion 205 in an area of 0.6mm×0.6 mm (except the phase change portion 205). Furthermore, an upperelectrode 204 of Au was formed to a thickness of 0.1 μm in an area of0.6 mm×0.6 mm. The lower electrode 202, the phase change portion 205,the insulating portion 206 and the upper electrode 204 were formed bysputtering.

In the step of forming the phase change portion 205, a sputtering target(diameter: 100 mm, thickness: 6 mm) made of a Ge—Sb—Te material wasprovided in a film-formation apparatus, and DC sputtering was performedat a power of 100 W with Ar gas introduced. The pressure during thesputtering was about 0.13 Pa. In the step of forming the insulatingportion 206, a sputtering target (diameter: 100 mm, thickness: 6 mm)made of a material having a composition of (ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀(mol %) was provided in a film-formation apparatus, and high frequencysputtering was performed at a pressure of about 0.13 Pa. The power was400W. During the sputtering, Ar gas was introduced. The sputtering inthese processes was performed with the areas other than the surface onwhich a film is to be formed covered with a masking tool so that thephase change portion 205 and the insulating portion 206 were notlaminated each other. The order of forming the phase change portion 205and the insulating portion 206 does not matter, and either can be formedfirst.

The phase change portion 205 and the insulating portion 206 constitutethe recording portion 203. The phase change portion 205 corresponds tothe recording layer in the present invention, and the insulating portion206 corresponds to the oxide-based material layer in the presentinvention.

The lower electrode 202 and the upper electrode 204 can be formed bysputtering that is generally used in the field of the electrode forming,so that the process of forming these films is not described in detail.

It was confirmed by a system shown in FIG. 10 that a phase change iscaused in the phase change portion 205 by applying electric energy tothe information recording medium 207 produced in the above-describedmanner. The cross-sectional view of the information recording medium 207shown in FIG. 10 shows the cross-section taken in the thicknessdirection along line A-B of the information recording medium 207 shownin FIG. 9.

More specifically, as shown in FIG. 10, by bonding two applying portions212 to the lower electrode 202 and the upper electrode 204,respectively, with Au lead wires, an electric write/read-out device 214is connected to the information recording medium (memory) 207 via theapplying portions 212. In this electric write/read-out device 214, apulse generating portion 208 is connected between the applying portions212 each connected to the lower electrode 202 and the upper electrode204 via a switch 210, and a resistance measuring device 209 is connectedtherebetween via a switch 211. The resistance measuring device 209 isconnected to a determining portion 213 that determines whether aresistance value measured by the resistance measuring device 209 is highor low. A current pulse is allowed to flow between the upper electrode204 and the lower electrode 202 via the applying portion 212 by thepulse generating portion 208, and the resistance value between the lowerelectrode 202 and the upper electrode 204 is measured by the resistancemeasuring device 209. Then, the determining portion 213 determineswhether this resistance value is high or low. In general, since theresistance value is changed by phase change of the phase change portion205, the phase state of the phase change portion 205 can be known basedon the determination results.

In the case of this example, the melting point of the phase changeportion 205 was 630° C., the crystallization temperature was 170° C.,and the crystallization time was 130 ns. The resistance value betweenthe lower electrode 202 and the upper electrode 204 was 1000Ω when thephase change portion 205 was in the amorphous phase state and was 20Ωwhen the phase change portion 205 was in the crystalline phase state.When the phase change portion 205 was in the amorphous phase state(i.e., the state of high resistance) and a current pulse of 20 mA and150 ns was applied between the lower electrode 202 and the upperelectrode 204, the resistance value between the lower electrode 202 andthe upper electrode 204 was reduced, and the phase change portion 205was changed from the amorphous phase state to the crystalline phasestate. Next, when the phase change portion 205 was in the crystallinephase state (i.e., the state of low resistance) and a current pulse of200 mA and 100 ns was applied between the lower electrode 202 and theupper electrode 204, the resistance value between the lower electrode202 and the upper electrode 204 was increased, and the phase changeportion 205 was changed from the crystalline phase state to theamorphous phase state.

The results obtained above confirmed that a phase change is caused inthe phase change portion (recording layer) by using a layer containing amaterial having a composition of (ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀ (mol %) asthe insulating portion 206 surrounding the phase change portion 205 andapplying electric energy, and thus the information recording medium 207serves to record information.

As in this example, when the insulating portion 206 of(ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀ (mol %) that is a dielectric is providedaround the cylindrical phase change portion 205, current flowing throughthe phase change portion 205 by applying a voltage between the upperelectrode 204 and the lower electrode 202 is prevented effectively fromescaping to the surrounding portion. As a result, the temperature of thephase change portion 205 can be increased efficiently by the Joule heatgenerated by current. In particular, to change the phase change portion205 to the amorphous phase state, it is necessary to melt Ge₃₈Sb₁₀Te₅₂of the phase change portion 205 and then cool it rapidly. The phasechange portion 205 can be melted with a smaller current by providing theinsulating portion 206 around the phase change portion 205.

The (ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀ (mol %) of the insulating portion 206 hasa high melting point, and atomic diffusion due to heat hardly occurs,and therefore this can be applied to an electric memory such as theinformation recording medium 207. Furthermore, when the insulatingportion 206 is present around the phase change portion 205, theinsulating portion 206 serves as a barrier so that the phase changeportion 205 is substantially isolated electrically and thermally in theplane of the recording portion 203. Utilizing this, it is possible toincrease the memory capacity of the information recording medium 207 andto improve the access function and the switching function by providing aplurality of phase change portions 205 that are isolated each other bythe insulating portion 206. Alternatively, a plurality of informationrecording media 207 can be coupled.

Although (ZrO₂)₁₅(SiO₂)₁₅(Ga₂O₃)₇₀ (mol %) was used for example, thesame results were obtained with oxide-based material layers containingZrO₂ as D, and La₂O₃, CeO₂, Al₂O₃, In₂O₃, MgO and Y₂O₃ as E.Furthermore, the same results were obtained with oxide-based materiallayers containing HfO₂ as D, and La₂O₃, CeO₂, Al₂O₃, Ga₂O₃, In₂O₃, MgO,and Y₂O₃ as E. As described with respect to the information recordingmedia of the present invention through the various examples, theoxide-based material layer can be used for both the informationrecording medium for recording with optical means and the informationrecording medium for recording with electric means. The informationrecording medium of the present invention containing the oxide-basedmaterial layer can achieve the structure that has not been achievedand/or provides better performance than that of the conventionalinformation recording medium.

The information recording medium of the present invention and the methodfor producing are useful for DVD-RAM disk, DVD-RW (Digital VersatileDisk-Recordable) disk, DVD+RW (Digital Versatile Disk+Rewritable) disk,DVD-R (Digital Versatile Disk-Recordable) disk, Blu-ray Disc or the likeas a large capacity optical information recording medium having anexcellent dielectric material. Furthermore, the present invention can beapplied to a magneto-optical disk. In addition, the present inventioncan be useful as an electric switching element as an electricinformation recording medium. In any case, the present invention can beapplied regardless of rewritable or write once type, and can be used asan information recording medium containing a read-only medium.

The invention may be embodied in other forms without departing from thespirit or essential characteristics thereof. The embodiments disclosedin this application are to be considered in all respects as illustrativeand not limiting. The scope of the invention is indicated by theappended claims rather than by the foregoing description, and allchanges which come within the meaning and range of equivalency of theclaims are intended to be embraced therein.

1. An information recording medium that allows at least one of recordingand reproduction of information by irradiation of light or applicationof electric energy, comprising: an oxide-based material layer consistingof at least one element selected from the group GL1 consisting of La, Gaand In, and Zr, and oxygen (O), wherein the oxide-based material layercontains a material having a composition expressed by:Zr_(Q1)L1_(T1)O_(100-Q1-T1)(atom %) where L1 is at least one elementselected from the group GL1, and Q1 and T1 satisfy 1.0≦Q1≦31.6,3.3≦T1≦38.8, and 20<Q1+T1<60.
 2. The information recording mediumaccording to claim 1, wherein L1 is Ga.
 3. The information recordingmedium according to claim 1, wherein the oxide-based material layercontains a material that can be expressed by:(D1)_(X1)(E1)_(100-X1)(mol %) where D1 is an oxide of Zr, E1 is an oxideof at least one element selected from the group GL1, and X1 satisfies5<X1<95.
 4. The information recording medium according to claim 3,wherein D1 is ZrO₂ and E1 is Ga₂O₃.
 5. An information recording mediumthat allows at least one of recording and reproduction of information byirradiation of light or application of electric energy, comprising: anoxide-based material layer consisting of M1 (where M1 is a mixture of Zrand Hf, or Hf), at least one element selected from the group GL3consisting of La, Ga, Mg and Y, and oxygen (O)), wherein the oxide-basedmaterial layer contains a material having a composition expressed by:M1_(Q2)L3_(T2)O_(100-Q2-T2)(atom %) where M1 is a mixture of Zr and Hf,or Hf, L3 is at least one element selected from the group GL3, and Q2and T2 satisfy 1.0≦Q2≦32.2, 1.7≦T2≦46.3, and 20<Q2+T2<60.
 6. Theinformation recording medium according to claim 5, wherein L3 is Ga. 7.The information recording medium according to claim 5, wherein theoxide-based material layer contains a material that can be expressed:(D2)_(X2)(E3)_(100-X2)(mol %) where D2 is an oxide of M1, E3 is an oxideof at least one element selected from the group GL3, and X2 satisfies5<X2<95.
 8. The information recording medium according to claim 7,wherein E3 is Ga₂O₃.
 9. An information recording medium that allows atleast one of recording and reproduction of information by irradiation oflight or application of electric energy, comprising: an oxide-basedmaterial layer consisting of at least one element selected from thegroup GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, andoxygen (O), wherein the oxide-based material layer contains a materialhaving a composition expressed by:Zr_(Q3)Si_(R1)L2_(T3)O_(100-Q3-R1-T3)(atom %) where L2 is at least oneelement selected from the group GL2, and Q3, R1 and T3 satisfy 0<Q3≦32,0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.
 10. The information recordingmedium according to claim 9, wherein L2 is Ga.
 11. The informationrecording medium according to claim 9, wherein the oxide-based materiallayer contains a material that can be expressed by:(ZrO₂)_(X3)(g)_(Z1)(E2)_(100-X3-Z1)(mol %) where g is at least onecompound selected from the group consisting of SiO₂, Si₃N₄ and SiC, E2is an oxide of at least one element selected from the group GL2, and X3and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.
 12. The informationrecording medium according to claim 11, wherein E2 is Ga₂O₃.
 13. Aninformation recording medium that allows at least one of recording andreproduction of information by irradiation of light or application ofelectric energy, comprising: an oxide-based material layer consisting ofat least one element selected from the group GL2 consisting of La, Al,Ga, In, Mg and Y, and Zr, and Si, and oxygen (O), wherein theoxide-based material layer further contains at least one elementselected from the group GK1 consisting of carbon (C), nitrogen (N) andCr.
 14. The information recording medium according to claim 13, whereinthe oxide-based material layer contains a material having a compositionexpressed by:Zr_(Q3)Si_(R1)L2_(T3)K1_(J1)O_(100-Q3-R1-T3-J1)(atom %) where L2 is atleast one element selected from the group GL2, and K1 is at least oneelement selected from the group GK1, and Q3, R1, T3 and J1 satisfy0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80.
 15. Theinformation recording medium according to claim 14, wherein L2 is Ga.16. The information recording medium according to claim 14, wherein theoxide-based material layer contains a material that can be expressed by:(ZrO₂)_(X3)(g)_(Z1)(E2)_(100-X3-Z1)(mol %) where g is at least onecompound selected from the group consisting of SiO₂, Si₃N₄ and SiC, E2is an oxide of at least one element selected from the group GL2, and X3and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90.
 17. The informationrecording medium according to claim 16, wherein E2 is Ga₂O₃.
 18. Theinformation recording medium according to claim 14, wherein theoxide-based material layer contains a material that can be expressed by:(ZrO₂)_(X3)(SiO₂)_(Z2)(E2)_(100-X3-Z2-A1)(mol %) where f is at least onecompound selected from the group consisting of SIC, Si₃N₄, and Cr₂O₃, E2is an oxide of at least one element selected from the group GL2, and X3,Z2 and A1 satisfy 10≦X3<90, 0<Z2≦50, 0<A1≦50, and 10<X3+Z2A1≦90.
 19. Theinformation recording medium according to claim 18, wherein E2 is Ga₂O₃.20. An information recording medium that allows at least one ofrecording and reproduction of information by irradiation of light orapplication of electric energy, comprising: an oxide-based materiallayer consisting of at least one element selected from the group GL2consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O),wherein the oxide-based material layer contains a material having acomposition expressed by:Zr_(Q4)Cr_(U)L2_(T4)O_(100-Q4-U-T4)(atom %) where L2 is at least oneelement selected from the group GL2, and Q4, U and T4 satisfy 0<Q4≦32,0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.
 21. The information recording mediumaccording to claim 20 wherein L2 is Ga.
 22. The information recordingmedium according to claim 20, wherein the oxide-based material layercontains a material that can be expressed by:(ZrO₂)_(X4)(Cr₂O₃)(E2)_(100-X4-A2)(mol %) where E2 is an oxide of atleast one element selected from the group GL2, and X4 and A2 satisfy10≦X4<90, 0<A2≦40, and 10<X4+A2≦90.
 23. The information recording mediumaccording to claim 22, wherein E2 is Ga₂O₃.
 24. An information recordingmedium that allows at least one of recording and reproduction ofinformation by irradiation of light or application of electric energy,comprising: an oxide-based material layer consisting of at least oneelement selected from the group GL2 consisting of La, Al, Ga, In, Mg andY, and Zr, and Cr, and oxygen (O), wherein the oxide-based materiallayer contains a material having a composition expressed by:Zr_(Q4)Cr_(U)L2_(T4)Si_(R2)K2_(J2)O_(100-Q4-U-T4-R2-J2)(atom %) where L2is at least one element selected from the group GL2, and K2 is at leastone element selected from the group GK2 consisting of nitrogen (N) andcarbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40,0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.
 25. The information recordingmedium according to claim 24, wherein L2 is Ga.
 26. The informationrecording medium according to claim 24, wherein the oxide-based materiallayer contains a material that can be expressed by:(ZrO₂)_(X4)(Cr₂O₃)_(A2)(h)_(Z3)(E2)_(100-X4-A2-Z3)(mol %) where h is atleast one compound selected from the group consisting of Si₃N₄ and SiC,E2 is an oxide of at least one element selected from the group GL2, andX4, A2, and Z3 satisfy 10≦X4<90, 0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90.27. The information recording medium according to claim 26, wherein E2is Ga₂O₃.
 28. The information recording medium according to claim 1,further comprising at least one recording layer.
 29. The informationrecording medium according to claim 28, wherein a phase change is causedin the recording layer.
 30. The information recording medium accordingto claim 29, wherein the recording layer comprises any one materialselected from the group consisting of Ge—Sb—Te, Ge—Sn—Sb—Te, Ge—Bi—Te,Ge—Sn—Bi—Te, Ge—Sb—Bi—Te, Ge—Sn—Sb—Bi—Te, Ag—In—Sb—Te and Sb—Te.
 31. Theinformation recording medium according to claim 30, wherein a thicknessof the recording layer is 20 nm or less.
 32. The information recordingmedium according to claim 28, wherein the oxide-based material layer isprovided in contact with at least one surface of the recording layer.33. The information recording medium according to claim 28, comprising aplurality of recording layers, wherein at least one of the plurality ofrecording layers is said recording layer.
 34. An information recordingmedium that allows at least one of recording and reproduction ofinformation by irradiation of light or application of electric energy,comprising: an oxide-based material layer consisting of at least oneelement selected from the group GL1 consisting of La, Ga and in, atleast one element selected from the group GL consisting of Al, Mg and Y,and Zr, and oxygen (O)), wherein the oxide-based material layer containsa material having a composition expressed by:Zr_(Q1)L1_(T1)L_(T7)O_(100-Q1-T1-T7)(atom %) where L1 is at least oneelement selected from the group GL1, L is at least one element selectedfrom the group GL, and Q1, T1 and T7 satisfy 1.0≦Q1≦32.2,1.7≦T1+T7≦46.3, and 20<Q1+T1<60.
 35. The information recording mediumaccording to claim 5, further comprising at least one recording layer.36. The information recording medium according to claim 9, furthercomprising at least one recording layer.
 37. The information recordingmedium according to claim 20, further comprising at least one recordinglayer.
 38. An information recording medium that allows at least one ofrecording and reproduction of information by irradiation of light orapplication of electric energy, comprising: an oxide-based materiallayer consisting of at least one element selected from the group GL3consisting of La, Ga, Mg and Y, at least one element selected from thegroup GL4 consisting of Ce, Al and In, and M1 (where M1 is a mixture ofZr and Hf, or Hf), and oxygen (O), wherein the oxide-based materiallayer contains a material having a composition expressed by:M1_(Q2)L3_(T5)L4_(T6)O_(100-Q2-T5-T6)(atom %) where M1 is a mixture ofZr and Hf, or Hf, L3 is at least one element selected from the groupGL3, L4 is at least one element selected from the group GL4, and Q2, T5and T6 satisfy 1.0≦Q2≦32.2, 1.7≦T5+T6≦46.3, and 20<Q2+T5+T6<60.
 39. Theinformation recording medium according to claim 38, wherein theoxide-based material layer contains a material that can be expressed:(D2)_(100-X5-X6)(E4)_(X6)(E3)_(X5)(mol %) Where D2 is an oxide of M1, E3is an oxide of at least one element selected from the group GL3, E4 isan oxide of at least one element selected from the group GL4, and X5 andX6 satisfy 5≦X5+X6≦95.
 40. An information recording medium that allowsat least one of recording and reproduction of information by irradiationof light or application of electric energy, comprising: an oxide-basedmaterial layer consisting of M1 (where M1 is a mixture of Zr and Hf, orHf), at least one element selected from the group GL3 consisting of La,Ga, Mg, and Y, and Si, and oxygen (O), wherein the oxide-based materiallayer contains a material having a composition expressed by:M1_(Q3)Si_(R1)L3_(T3)O_(100-Q3-R1-T3)(atom %) where L3 is at least oneelement selected from the group GL3, and Q3, R1 and T3 satisfy 0<Q3≦32,0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.
 41. The information recordingmedium according to claim 40, wherein L3 is Ga.
 42. The informationrecording medium according to claim 40, wherein the oxide-based materiallayer contains a material that can be expressed by:(D2)_(X3)(g)_(Z1)(E3)_(100-X3-Z1)(mol %) where D2 is an oxide of M1, gis at least one compound selected from the group consisting of SiO₂,Si₃N₄ and SiC, E3 is an oxide of at least one element selected from thegroup GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 43.The information recording medium according to claim 42, wherein E3 isGa₂O₃.
 44. An information recording medium that allows at least one ofrecording and reproduction of information by irradiation of light orapplication of electric energy, comprising: an oxide-based materiallayer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), atleast one element selected from the group GL3 consisting of La, Ga, Mg,and Y, and Si, and oxygen (O), wherein the oxide-based material layerfurther contains at least one element selected from the group GK1consisting of carbon (C), nitrogen (N) and Cr.
 45. The informationrecording medium according to claim 44, wherein the oxide-based materiallayer contains a material having a composition expressed by:M1_(Q3)Si_(R1)L3_(T3)K1_(J1)O_(100-Q3-R1-T3-J1)(atom %) where K1 is atleast one element selected from the group GK1, L3 is at least oneelement selected from the group GL3, and Q3, R1, T3 and J1 satisfy0<Q3≦32, 0<R1≦35, 2<T3≦40, 0<J1≦40, and 20<Q3+R1+T3+J1<80.
 46. Theinformation recording medium according to claim 45, wherein L3 is Ga.47. The information recording medium according to claim 45, wherein theoxide-based material layer contains a material that can be expressed by:(D2)_(X3)(g)_(Z1)(E3)_(100-X3-Z1)(mol %) where D2 is an oxide of M1, gis at least one compound selected front the group consisting of SiO₂,Si₃N₄ and SiC, E3 is an oxide of at least one element selected from thegroup GL3, and X3 and Z1 satisfy 10≦X3<90, 0<Z1≦50, and 10<X3+Z1≦90. 48.The information recording medium according to claim 47, wherein E3 isGa₂O₃.
 49. The information recording medium according to claim 45,wherein the oxide-based material layer contains a material that can beexpressed by:(D2)_(X3)(SiO₂)_(Z2)(f)_(A1)(E3)_(100-X3-Z2-A1)(mol %) where D2 is anoxide of M1, f is at least one compound selected from the groupconsisting of SiC, Si₃N₄, and Cr₂O₃, E3 is an oxide of at least oneelement selected from the group GL3, and X3, Z2 and A1 satisfy 10≦X3<90,0<Z2≦50, 0<A1≦50, and 10<X3+Z2+A1≦90.
 50. The information recordingmedium according to claim 49, wherein E3 is Ga₂O₃.
 51. An informationrecording medium that allows at least one of recording and reproductionof information by irradiation of light or application of electricenergy, comprising: an oxide-based material layer consisting of M1(where M1 is a mixture of Zr and Hf, or Hf), at least one elementselected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, andoxygen (O), wherein the oxide-based material layer contains a materialhaving a composition expressed by:M1_(Q4)Cr_(U)L3_(T4)O_(100-Q4-U-T4)(atom %) where L3 is at least oneelement selected from the group GL3, and Q4, U and T4 satisfy 0<Q4≦32,0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.
 52. The information recording mediumaccording to claim 51, wherein L3 is Ga.
 53. The information recordingmedium according to claim 51, wherein the oxide-based material layercontains a material that can be expressed by:(D2)_(X4)(Cr₂O₃)_(A2)(E3)_(100-X4-A2)(mol %) where D2 is an oxide of M1,E3 is an oxide of at least one element selected from the group GL3, andX4 and A2 satisfy 10≦X4<90, 0<A2≦40, and 10<X4+A2≦90.
 54. Theinformation recording medium according to claim 53, wherein E3 is Ga₂O₃.55. An information recording medium that allows at least one ofrecording and reproduction of information by irradiation of light orapplication of electric energy, comprising: an oxide-based materiallayer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), atleast one element selected from the group GL3 consisting of La, Ga, Mgand Y, and Cr, and oxygen (O), wherein the oxide-based material layercontains a material having a composition expressed by:M1_(Q4)Cr_(U)L3_(T4)Si_(R2)K2_(J2)O_(100-Q4-U-T4-R2-J2)(atom %) where L3is at least one element selected from the group GL3, and K2 is at leastone element selected from the group GK2 consisting of nitrogen (N) andcarbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40,0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.
 56. The information recordingmedium according to claim 55, wherein L3 is Ga.
 57. The informationrecording medium according to claim 55, wherein the oxide-based materiallayer contains a material that can be expressed by:(D₂)_(X4)(Cr₂O₃)_(A2)(h)_(Z3)(E3)_(100-X4-A2-Z3)(mol %) where D2 is anoxide of M1, h is at least one compound selected from the groupconsisting of Si₃N₄ and SiC, E3 is an oxide of at least one elementselected from the group GL3, and X4, A2, and Z3 satisfy 10≦X4<90,0<A2≦40, 0<Z3≦40, and 10<X4+A2+Z3≦90.
 58. The information recordingmedium according to claim 57, wherein E3 is Ga₂O₃.